Research of Epitaxial Growth and Electrical Analysis of Si-Ge-C Layer

Si-Ge-C层外延生长及电学分析研究

基本信息

批准号：
10450114
负责人：
KONAGAI Makoto
金额：
$ 7.94万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

Lowering process temperature is important to overcome thermal problems such as interdiffusion between doped layers and autodoping effects. Furthermore, such low temperatures are also required for the growth of strained SiGe or other compound semiconductors based on group IV elements. The introduction of such SiGeC-based heteroepitaxial devices open a new field in the Si technologies.We studied the structural properties of SiGe and SiGeC alloys by ab initio total-energy calculations. It is found from these calculations that the Ge cluster is a stable structure in a SiGe alloy. Furthermore, it is also demonstrated that Vegard's law is valid in a SiGeC system whose C content is less than 3%. The total-energy calculation of the Si0.72Ge0.25C0.03 alloy in which the number of Ge-C bonds around a C atom varies shows that the energy increases on increasing the number of Ge-C bonds. The mechanism of this increase is considered, taking into account the cohesive energy difference of the SiC and G … More eC alloys and the atomic configuration around the C atom.We applied Hot Wire (HW) Cell method to low temperature Si epitaxy. The substrate temperature was 200℃. When the pressure was as low as 5x10ィイD1-4ィエD1 Torr, the film structure was amorphous. By optimizing the pressure during the growth, we obtained epitaxial Si films on Si(100) substrate with film thickness of over 400nm at the pressure of 0.015 Torr. The growth rate was about 0.2mn/s. The film structure changed from epitaxial to polycrystalline by increasing the pressure up to 0.1 Torr. In addition, it was found that the hydrogen was incorporated into the epitaxial Si films from IR spectra measurement. There were absorption peaks at 2150 and 2050 cmィイD1-1ィエD1 originating from Si-H related bondings. X-ray diffraction pattern was also measured, and the peak of the epitaxial Si film was shifted to lower degree compared to the peak of substrate. It indicated that the lattice constant was expanded by the hydrogen atoms which made Si-H-Si configuration in the films. This stress caused the critical thickness for epitaxy and it was about 100nm at the pressure of 0.033 Torr. Less

降低工艺温度对于克服热问题，例如掺杂层和自动解码效应等热问题。此外，基于IV组元素的菌株SIGE或其他复合半导体的生长也需要这种低温。此类基于SIGEC的杂质杂质设备的引入在SI Technologies中打开了一个新领域。我们通过从头开始的总能量计算研究了SIGE和SIGEC合金的结构特性。从这些计算中可以发现，GE簇是SIGE合金中的稳定结构。此外，还证明Vegard的定律在C含量小于3％的SIGEC系统中有效。 SI0.72GE0.25C0.03合金的总能量计算，其中C原子围绕的GE-C键数表明，增加GE-C键数量的能量增加。考虑到SIC和G…更多的EC合金和C原子周围的原子构型的凝聚力差，考虑了这种增加的机制。我们将热线（HW）细胞方法应用于低温SI外观。底物温度为200℃。当压力低至5x10II D1-4IE D1 TORR时，膜结构是无定形的。通过优化生长期间的压力，我们在SI（100）底物上获得了外延SI膜，其厚度超过400nm，其压力为0.015 TORR。增长率约为0.2mn/s。膜结构通过将压力提高到0.1 TORR而从外延变为多晶。此外，发现从红外光谱测量中将氢掺入了外延SI膜中。在2150和2050 CMII D1-1I D1时有滥用峰，源自SI-H相关键。还测量了X射线衍射模式，与底物的峰相比，外延SI膜的峰转移到较低程度。这表明晶格常数是通过在膜中制造Si-H-Si构型的氢原子扩展的。这种应力导致外延的临界厚度，在0.033 Torr的压力下约为100nm。较少的