Study of Novel Silicon Heterojunction Solar Cells with Controlled Fixed Charge
新型可控固定充电硅异质结太阳能电池的研究
基本信息
- 批准号:19206001
- 负责人:
- 金额:$ 31.12万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2007
- 资助国家:日本
- 起止时间:2007 至 2009
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Novel Si heterojunction solar cells were proposed to improve the energy conversion efficiency of conventional Si solar cells. For p-type Si solar cells with a widegap n-type micorcystalline 3C-SiC as an emitter layer and with an amorphous AlO as a backside passivation layer, an efficiency of 16% was demonstrated for the first time in the world. Furthermore, very high efficiency of 18.5% has been achieved for a novel solar cell with a configuration of n-type microcrystalline Si/undoped-SiO/p-type Si wafer/p-type microcrystalline SiO back contact. Almost all research targets were met by FY2009.
提出了新型的SI异缝太阳能电池,以提高常规SI太阳能电池的能量转化效率。对于具有宽屏N型MicorcyStalline 3C-SIC作为发射极层的P型Si太阳能电池,并以无定形ALO作为背面钝化层,在世界上首次证明了16%的效率。此外,对于具有N型微晶SI/Undoped-SIO/P-type Si Wafer/P-Type微晶SIO SIO SIO背面的新型太阳能电池,已经达到了非常高的效率为18.5%。几乎所有研究目标均在2009财年满足。
项目成果
期刊论文数量(23)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells
- DOI:10.1143/jjap.48.101603
- 发表时间:2009-10
- 期刊:
- 影响因子:1.5
- 作者:J. Sritharathikhun;Fangdan Jiang;S. Miyajima;A. Yamada;M. Konagai
- 通讯作者:J. Sritharathikhun;Fangdan Jiang;S. Miyajima;A. Yamada;M. Konagai
FABRICATION OF N-AND P-TYPE HETEROJUNCTION SOLAR CELLSBY USING HYDROGENATED MICROCRYSTALLINE SILICON OXIDE FILM AS AN EMITTER
以氢化微晶氧化硅薄膜为发射极制备N型和P型异质结太阳能电池
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:J. Sritharathikhun;A. Yamada and M. Konagai
- 通讯作者:A. Yamada and M. Konagai
Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells
- DOI:10.1143/jjap.47.8452
- 发表时间:2008-11
- 期刊:
- 影响因子:1.5
- 作者:J. Sritharathikhun;H. Yamamoto;S. Miyajima;A. Yamada;M. Konagai
- 通讯作者:J. Sritharathikhun;H. Yamamoto;S. Miyajima;A. Yamada;M. Konagai
Properties of heterojunction crystalline silicon solar cells with a hydrogenated nanocrystalline cubic silicon carbide window layer
具有氢化纳米晶立方碳化硅窗口层的异质结晶体硅太阳能电池的性能
- DOI:
- 发表时间:2009
- 期刊:
- 影响因子:0
- 作者:Shinsuke Miyajima;Akira Yamada;Makoto Konagai
- 通讯作者:Makoto Konagai
HIGH QUALITY i-a-SiO : H BUFFER LAYER FOR HIGH EFFICIENCY p-μc-SiO : H/N-c-Si HETEROJUNCTION SOLAR CELLS
高品质 i-a-SiO : H 缓冲层,用于高效 p-μc-SiO : H/N-c-Si 异质结太阳能电池
- DOI:
- 发表时间:2009
- 期刊:
- 影响因子:0
- 作者:Junpei Irikawa;Shinsuke Miyajima;Akira Yamada;Makoto Konagai
- 通讯作者:Makoto Konagai
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KONAGAI Makoto其他文献
KONAGAI Makoto的其他文献
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{{ truncateString('KONAGAI Makoto', 18)}}的其他基金
Development of High Efficiency Thin-Substrate Silicon Solar Cells with Controlled Nano-Interface
具有受控纳米界面的高效薄基板硅太阳能电池的开发
- 批准号:
22246001 - 财政年份:2010
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Position control of InAs quantum dots by using AFM oxidation method and application to single electron transistor
AFM氧化法InAs量子点位置控制及其在单电子晶体管中的应用
- 批准号:
13450124 - 财政年份:2001
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Research of Epitaxial Growth and Electrical Analysis of Si-Ge-C Layer
Si-Ge-C层外延生长及电学分析研究
- 批准号:
10450114 - 财政年份:1998
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of nanofabrication technology of metallic p-GaAs and its application to single hole transistors
金属p-GaAs纳米加工技术进展及其在单孔晶体管中的应用
- 批准号:
10555101 - 财政年份:1998
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Study of Nitrogen Doping of ZnSe by Catalysis of Transition Metals
过渡金属催化ZnSe氮掺杂研究
- 批准号:
06452109 - 财政年份:1994
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Study OF Ultra-High Speed Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base
重碳掺杂基极超高速异质结双极晶体管的研究
- 批准号:
04555066 - 财政年份:1992
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Control of the arrangement of native vacancies and optical in III-VI compound semiconductors
III-VI族化合物半导体中原生空位和光学排列的控制
- 批准号:
04452088 - 财政年份:1992
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Investigation of Heterojunction Bipolar Transistors Using Metallic P-Type Base Layer
使用金属 P 型基层的异质结双极晶体管的研究
- 批准号:
01460136 - 财政年份:1989
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of Low-Temperature Epitaxy of Silicon by Photo-Chemical Vapor Deposition
光化学气相沉积硅低温外延技术的进展
- 批准号:
62850053 - 财政年份:1987
- 资助金额:
$ 31.12万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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Grant-in-Aid for Challenging Exploratory Research
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- 批准号:
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