Low-Temperature Epitaxy of Gallium Nitride Thin Films

氮化镓薄膜的低温外延

• 批准号: 1068510
• 负责人: Yongfeng Lu
• 金额: $ 27.53万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-05-01 至 2016-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1068510&HistoricalAwards=false
• 关键词: Low; Temperature; Epitaxy; Gallium; Nitride

The research objective of this award is to elucidate the mechanisms responsible for a low-temperature growth process of high-quality gallium nitride (GaN) films with low thermal impact on substrates. The project will develop a laser-assisted metalorganic vapor phase epitaxy (L-MOVPE) process that can enhance the chemical reactions in epitaxy of GaN thin films with low substrate temperatures. A wavelength-tunable CO2 laser, with a wavelength tunability from 9.2 to 10.9 micrometers, will be used to resonantly excite NH3 molecules for promoting chemical reactions to facilitate and maximize the GaN epitaxy process. The research approach progresses from mechanism study of resonant excitations of precursor molecules, to growth of high-quality GaN epilayers on different substrates for a wide range of applications. Deliverables include an L-MOVPE system configured for synthesis of GaN thin films and other functional materials, documentation of research results, and engineering student education.If successful, the results of this research will realize low-temperature growth of high-quality GaN films with high energy-coupling efficiency and low thermal impact on substrates. In terms of applications, the proposed method can provide a novel approach of GaN epitaxy on sapphire or SiC substrates for electronic, optoelectronic, chemical, and biological applications. The successful completion of this project will impact the scientific research of laser-controlled chemical processes by resonant excitation of precursor molecules. Practically, the proposed method is expected to provide a novel approach to synthesizing functional materials at lower temperature with high energy-coupling efficiency. The research results will also contribute to productivity improvement, energy savings, and environmental protection in related industries that rely on high-temperature chemical processes to fabricate compound semiconductors. Graduate and undergraduate students will benefit through involvement in the research and classroom instruction. The engagement of K-12 students and teachers in this project will also establish new partnerships between the University and K-12 schools.

该奖项的研究目标是阐明高质量氮化镓（GaN）薄膜的低温生长过程的机制，并且对基板的热影响低。该项目将开发一种激光辅助金属有机气相外延（L-MOVPE）工艺，可以增强低衬底温度下GaN薄膜外延中的化学反应。波长可调CO2激光器的波长可调范围为9.2至10.9微米，将用于共振激发NH3分子以促进化学反应，以促进和最大化GaN外延工艺。研究方法从前体分子共振激发的机制研究，发展到在不同衬底上生长高质量 GaN 外延层，以适应广泛的应用。可交付成果包括用于合成 GaN 薄膜和其他功能材料的 L-MOVPE 系统、研究成果文档和工程学生教育。如果成功，这项研究的成果将实现高质量 GaN 薄膜的低温生长高能量耦合效率和对基板的低热影响。在应用方面，所提出的方法可以为电子、光电子、化学和生物应用提供一种在蓝宝石或SiC衬底上进行GaN外延的新方法。该项目的成功完成将影响通过前体分子共振激发激光控制化学过程的科学研究。实际上，所提出的方法有望提供一种在较低温度下合成具有高能量耦合效率的功能材料的新方法。研究成果还将有助于依赖高温化学工艺制造化合物半导体的相关行业的生产力提高、节能和环境保护。研究生和本科生将通过参与研究和课堂教学而受益。 K-12 学生和教师参与该项目还将在大学和 K-12 学校之间建立新的合作伙伴关系。