Low-Temperature Epitaxy of Gallium Nitride Thin Films

氮化镓薄膜的低温外延

• 批准号: 1068510
• 负责人: Yongfeng Lu
• 金额: $ 27.53万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-05-01 至 2016-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1068510&HistoricalAwards=false
• 关键词: Low; Temperature; Epitaxy; Gallium; Nitride

The research objective of this award is to elucidate the mechanisms responsible for a low-temperature growth process of high-quality gallium nitride (GaN) films with low thermal impact on substrates. The project will develop a laser-assisted metalorganic vapor phase epitaxy (L-MOVPE) process that can enhance the chemical reactions in epitaxy of GaN thin films with low substrate temperatures. A wavelength-tunable CO2 laser, with a wavelength tunability from 9.2 to 10.9 micrometers, will be used to resonantly excite NH3 molecules for promoting chemical reactions to facilitate and maximize the GaN epitaxy process. The research approach progresses from mechanism study of resonant excitations of precursor molecules, to growth of high-quality GaN epilayers on different substrates for a wide range of applications. Deliverables include an L-MOVPE system configured for synthesis of GaN thin films and other functional materials, documentation of research results, and engineering student education.If successful, the results of this research will realize low-temperature growth of high-quality GaN films with high energy-coupling efficiency and low thermal impact on substrates. In terms of applications, the proposed method can provide a novel approach of GaN epitaxy on sapphire or SiC substrates for electronic, optoelectronic, chemical, and biological applications. The successful completion of this project will impact the scientific research of laser-controlled chemical processes by resonant excitation of precursor molecules. Practically, the proposed method is expected to provide a novel approach to synthesizing functional materials at lower temperature with high energy-coupling efficiency. The research results will also contribute to productivity improvement, energy savings, and environmental protection in related industries that rely on high-temperature chemical processes to fabricate compound semiconductors. Graduate and undergraduate students will benefit through involvement in the research and classroom instruction. The engagement of K-12 students and teachers in this project will also establish new partnerships between the University and K-12 schools.

该奖项的研究目的是阐明负责低温氮化壳（GAN）膜的低温生长过程的机制，对底物的热影响低。该项目将开发激光辅助的金属有机蒸气相（L-MOVPE）过程，该过程可以增强具有低底物温度的GAN薄膜外延的化学反应。波长可调的二氧化碳激光器，其波长可调性从9.2到10.9微米，将用于共鸣，共同激发NH3分子，以促进化学反应，以促进和最大化GAN外观上的过程。研究方法从对前体分子的共振激发的机理研究发展，到在各种应用中不同底物上高质量的gan屈服者的生长。可交付成果包括配置用于合成GAN薄膜和其他功能材料的L-MOVPE系统，研究结果的文档以及学生教育。如果成功，则该研究的结果将实现具有高能量耦合效率的高质量GAN膜的低温增长和对底物的低热效应。在应用方面，提出的方法可以为电子，光电，化学和生物学应用提供新的GAN外延或SIC底物的新方法。该项目的成功完成将影响激光控制化学过程的科学研究，通过共振的前体分子的兴奋。实际上，该提出的方法有望提供一种新型的方法，可在较低的温度下以高能量耦合效率合成功能材料。研究结果还将有助于提高生产率，节能和环境保护，这些行业依靠高温化学过程来制造复合半导体。研究生和本科生将通过参与研究和课堂教学而受益。 K-12学生和教师参与该项目的参与也将在大学和K-12学校之间建立新的合作伙伴关系。