Development of quantum informative function using rare-earth ions doped well-controllably in semiconductors
利用半导体中可控掺杂的稀土离子开发量子信息功能
基本信息
- 批准号:26630131
- 负责人:
- 金额:$ 2.41万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Challenging Exploratory Research
- 财政年份:2014
- 资助国家:日本
- 起止时间:2014-04-01 至 2016-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
项目成果
期刊论文数量(11)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Energy migration between Eu luminescent sites in Eu-doped GaN
Eu掺杂GaN中Eu发光位点之间的能量迁移
- DOI:
- 发表时间:2015
- 期刊:
- 影响因子:0
- 作者:Y. Fujiwara;R. Wakamatsu;D. Timmerman;and A. Koizumi
- 通讯作者:and A. Koizumi
Resonant energy transfer between Eu luminescent sites and their local geometry in GaN
Eu 发光位点之间的共振能量转移及其在 GaN 中的局部几何形状
- DOI:10.1063/1.4933301
- 发表时间:2015
- 期刊:
- 影响因子:4
- 作者:D. Timmerman;R. Wakamatsu;K. Tanaka;D. Lee;A. Koizumi;and Y. Fujiwara
- 通讯作者:and Y. Fujiwara
Energy transfer processes in Eu-doped GaN
Eu 掺杂 GaN 中的能量转移过程
- DOI:
- 发表时间:2014
- 期刊:
- 影响因子:0
- 作者:藤原康文;Dolf Timmerman;児島貴徳;小泉淳;D. Timmerman and Y. Fujiwara
- 通讯作者:D. Timmerman and Y. Fujiwara
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
FUJIWARA Yasufumi其他文献
GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion
通过表面激活键合形成垂直极性反转的GaN通道波导,用于波长转换
- DOI:
10.35848/1347-4065/ac57ab - 发表时间:
2022 - 期刊:
- 影响因子:1.5
- 作者:
Yokoyama Naoki;Tanabe Ryo;Yasuda Yuma;Honda Hiroto;Ichikawa Shuhei;FUJIWARA Yasufumi;HIKOSAKA TOSHIKI;Uemukai Masahiro;TANIKAWA Tomoyuki;KATAYAMA Ryuji - 通讯作者:
KATAYAMA Ryuji
Formation and optical characteristics of GaN:Eu/GaN core-shell nanowires grown by organometallic vapor phase epitaxy
有机金属气相外延生长 GaN:Eu/GaN 核壳纳米线的形成及光学特性
- DOI:
10.35848/1347-4065/ac4e4c - 发表时间:
2022 - 期刊:
- 影响因子:1.5
- 作者:
Otabara Takaya;Tatebayashi Jun;Hasegawa Shunya;Timmerman Dolf;Ichikawa Shuhei;Ichimiya Masayoshi;ASHIDA Masaaki;FUJIWARA Yasufumi - 通讯作者:
FUJIWARA Yasufumi
FUJIWARA Yasufumi的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('FUJIWARA Yasufumi', 18)}}的其他基金
Development of highly efficient wavelength-conversion materials for next-generation solar cells using rare-earth ions doped in semiconductors
使用半导体中掺杂的稀土离子开发用于下一代太阳能电池的高效波长转换材料
- 批准号:
16K14233 - 财政年份:2016
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of bright red light-emitting devices by elucidation and control of light-emitting mechanism in rare-earth-doped nitride semiconductors
通过阐明和控制稀土掺杂氮化物半导体的发光机制开发亮红色发光器件
- 批准号:
24226009 - 财政年份:2012
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (S)
Development of terahertz emitters and detectors using rare-earth-doped semiconductors
使用稀土掺杂半导体开发太赫兹发射器和探测器
- 批准号:
23656220 - 财政年份:2011
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of advanced luminescent functionality by control of atomic configuration in rare-earth doped semiconductors
通过控制稀土掺杂半导体中的原子构型开发先进的发光功能
- 批准号:
20900123 - 财政年份:2008
- 资助金额:
$ 2.41万 - 项目类别:
Development of Properties and Functionalities by Precise Control of Rare-Earth Doping
通过精确控制稀土掺杂来开发性能和功能
- 批准号:
19GS1209 - 财政年份:2007
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Creative Scientific Research
Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors
基于稀土掺杂III-V族半导体的新型超稳波长发光器件性能改进研究
- 批准号:
15360164 - 财政年份:2003
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Materials for new semiconductor lasers; atomically-controlled, growth of rare-earth-doped III-V semiconductors with high quality
新型半导体激光器材料;
- 批准号:
13555002 - 财政年份:2001
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Atomically-controlled growth and properties of low-dimensional lanthanoide/semiconductor quantum structures
低维镧系元素/半导体量子结构的原子控制生长和特性
- 批准号:
11450119 - 财政年份:1999
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
ATOMIC-LAYER CONTROLLED SUPER-HETEROEPITAXY AND PROPERTIES OF LANTHANOIDE/SEMICONDUCTOR STRUCTURES
原子层控制超异质外延及镧系元素/半导体结构的性能
- 批准号:
08650009 - 财政年份:1996
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
相似海外基金
Directed evolution of broadly fungible biosensors
广泛可替代生物传感器的定向进化
- 批准号:
10587024 - 财政年份:2023
- 资助金额:
$ 2.41万 - 项目类别:
Development & application of computational methods for the study of protein dynamics with PmHMGR as a model system
发展
- 批准号:
10607487 - 财政年份:2023
- 资助金额:
$ 2.41万 - 项目类别:
Categorical and Higher-Categorical Approaches to Duality and Semantics across Mathematics, Physics, and Information
跨数学、物理和信息的二元性和语义的分类和更高分类方法
- 批准号:
17K14231 - 财政年份:2021
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
Cyanobacterial pseudo-natural products for anticancer drug discovery
用于抗癌药物发现的蓝藻伪天然产物
- 批准号:
10332782 - 财政年份:2021
- 资助金额:
$ 2.41万 - 项目类别:
Cyanobacterial pseudo-natural products for anticancer drug discovery
用于抗癌药物发现的蓝藻伪天然产物
- 批准号:
10487571 - 财政年份:2021
- 资助金额:
$ 2.41万 - 项目类别: