Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors

基于稀土掺杂III-V族半导体的新型超稳波长发光器件性能改进研究

• 批准号: 15360164
• 负责人: FUJIWARA Yasufumi
• 金额: $ 9.54万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360164/
• 关键词: rare-earth-doped III-V semiconductors; new semiconductor lasers; atomically-controlled growth; stimulated emission; erbium; doubleheterostructures; control of heterointerface; carrier dynamics

Rare-earth (RE) doped semiconductors have gained significant attention as a promising new class of materials that emit light from the RE 4f shell by means of electrical injection, in which the energy of electron-hole pairs is transferred to the RE shell. The intra-4f shell transitions of RE ions give rise to sharp emission lines whose wavelengths are largely independent of both the host materials and temperature. This stability occurs because the filled outer 5s and 5p electron shells screen transitions within the inner 4f electron shell from the interaction with the host. The intra-4f shell transitions from the first excited state (^4I_<13/2>) to the ground state (^4I_<15/2>) of Er^<3+> ions at around 1.5 μm is of special interest because the wavelength matches the minimum loss region of silica fibers used in optical communications.In this research project, we investigated new-type extremely-stable-wavelength light-emitting devices with Er,O-codoped GaAs (GaAs:Er,O) to get a clue for … More their improved performance. Results obtained experimentally are summarized as follows :1) Er-related luminescence was observed in GaInP/GaAs:Er,O/GaAs doubleheterostructures by injecting current at room temperature. The EL spectrum was dominated by Er-2O lines, suggesting a successful formation of the Er-2O center and preferential excitation of the center by current injection.2) The current density dependence of the EL intensity revealed an extremely large excitation cross section of Er ions by current injection, approximately 10^<-15> cm^2. The large excitation cross section was confirmed by time-resolved measurements of the EL intensity. It is by two orders in magnitude larger than that of Er-doped Si LEDs (6 x 10^<-17> cm^2).3) Carrier dynamics in GaAs:Er,O were investigated in a picosecond time scale by a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip ; a steep decrease to negative in less than 1 ps and then an increase in more than 100 ps. The reflectivity increase at the initial stage, consisting of two components, depended strongly on Er concentration. The Er-concentration dependence on the components reveals that an initial faster decay is due to the capture of nonequilibrium carriers by a trap induced by Er and O codoping Less

稀土（re）掺杂的半导体哈贝（Habe）获得了一种有希望的新材料，这些材料从re 4f f电气注入中发出，其中电子孔对的能量被转移到re壳中。 Re离子的发射波长在很大程度上与这两个温度无关。第一个激发态（^4i_ <13/2>5μm是特别的关注用于...获得的实验结果的线索如下：1）与ER相关的发光在Gainp/gaas中进行了ed：er，O/GAAS双重异质，通过在室温下注入电流。 ，成功形成了ER-2O中心和弯曲的优先兴奋。2）lintsenty注入的r族密度依赖性，约为10^<-15> cm^2。 El Itenty。y的两个级数大于掺杂的Si LED（6 x 10 ^<-17> cm ^2）。反射技术在不到1 ps的情况下表现出陡峭的降低，并在100 ps上增加了反射率。由于ER诱导的陷阱捕获非平衡载体，因此这种自动化速度更快

项目成果

Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy

有机金属气相外延法生长的 Er,O 共掺杂 GaAs 发光二极管具有极大的 Er 激发截面

• 发表时间: 2003
• 期刊: Materials Research Society Symposium Proceedings, Progress in Semiconductors II, Electronic and Optoelectronic Applications 744
• 作者: Y.Fujiwara;A.Koizumi;K.Inoue;A.Urakami;T.Yoshikane;Y.Takeda
• 通讯作者: Y.Takeda

Terahertz radiation from Er,O-codoped GaAs surface

来自 Er,O 共掺杂 GaAs 表面的太赫兹辐射

• 发表时间: 2005
• 期刊: Physics of Semiconductors, AIP Conference Proceedings 772
• 作者: M.de Boissieu;S.Francoual;Y.Kaneko;T.Ishimasa;K.Nakamura;S.Takemoto;K.Hidaka;T.Tokuno;Y.Fujiwara;M.Suzuki
• 通讯作者: M.Suzuki

Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO

S掺杂和随后的退火对含Er ZnO 1.54μm 附近光致发光的影响

• 发表时间: 2005
• 期刊: Materials Science Forum 475-479
• 作者: Z.Zhou;N.Sato;T.Komaki;A.Koizumi;T.Komori;M.Morinaga;Y.Fujiwara;Y.Takeda
• 通讯作者: Y.Takeda

Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs

直接观察 Er,O 共掺杂 GaAs 中光生载流子的捕获

• 发表时间: 2006
• 期刊: Physica B 376-377
• 作者: M.de Boissieu;S.Francoual;Y.Kaneko;T.Ishimasa;K.Nakamura
• 通讯作者: K.Nakamura

Injection-type light-emitting devices using rare-earth-doped III-V semiconductors

使用稀土掺杂III-V族半导体的注入型发光器件

• 发表时间: 2004
• 期刊: Oyo Buturi [in Japanese] 73(2)
• 作者: Y.Fujiwara;A.Koizumi;Y.Takeda
• 通讯作者: Y.Takeda