Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors

基于稀土掺杂III-V族半导体的新型超稳波长发光器件性能改进研究

• 批准号: 15360164
• 负责人: FUJIWARA Yasufumi
• 金额: $ 9.54万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360164/
• 关键词: rare-earth-doped III-V semiconductors; new semiconductor lasers; atomically-controlled growth; stimulated emission; erbium; doubleheterostructures; control of heterointerface; carrier dynamics

Rare-earth (RE) doped semiconductors have gained significant attention as a promising new class of materials that emit light from the RE 4f shell by means of electrical injection, in which the energy of electron-hole pairs is transferred to the RE shell. The intra-4f shell transitions of RE ions give rise to sharp emission lines whose wavelengths are largely independent of both the host materials and temperature. This stability occurs because the filled outer 5s and 5p electron shells screen transitions within the inner 4f electron shell from the interaction with the host. The intra-4f shell transitions from the first excited state (^4I_<13/2>) to the ground state (^4I_<15/2>) of Er^<3+> ions at around 1.5 μm is of special interest because the wavelength matches the minimum loss region of silica fibers used in optical communications.In this research project, we investigated new-type extremely-stable-wavelength light-emitting devices with Er,O-codoped GaAs (GaAs:Er,O) to get a clue for … More their improved performance. Results obtained experimentally are summarized as follows :1) Er-related luminescence was observed in GaInP/GaAs:Er,O/GaAs doubleheterostructures by injecting current at room temperature. The EL spectrum was dominated by Er-2O lines, suggesting a successful formation of the Er-2O center and preferential excitation of the center by current injection.2) The current density dependence of the EL intensity revealed an extremely large excitation cross section of Er ions by current injection, approximately 10^<-15> cm^2. The large excitation cross section was confirmed by time-resolved measurements of the EL intensity. It is by two orders in magnitude larger than that of Er-doped Si LEDs (6 x 10^<-17> cm^2).3) Carrier dynamics in GaAs:Er,O were investigated in a picosecond time scale by a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip ; a steep decrease to negative in less than 1 ps and then an increase in more than 100 ps. The reflectivity increase at the initial stage, consisting of two components, depended strongly on Er concentration. The Er-concentration dependence on the components reveals that an initial faster decay is due to the capture of nonequilibrium carriers by a trap induced by Er and O codoping Less

稀土（re）掺杂的半导体已获得了大量关注，这是一种新的材料，通过电气注入从Re 4F壳中散发出光线，其中电子孔对的能量被转移到Re shell中。 Re离子的Intra-4F壳体转变产生了尖锐的发射线，其波长在很大程度上与宿主材料和温度无关。这种稳定性之所以发生，是因为内部4F电子壳体内的填充外部5s和5p电子壳的筛网筛网过渡与主机的相互作用。从第一个激发态（^4i_ <13/2>）到er^<3+>离子的基态（^4i_ <15/2>）在1.5μm左右的基态（^4i_ <15/2>）的基础状态（^4i_ <15/2>）的过渡是特别的兴趣er，O编码的GAA（GAAS：ER，O）获得了一个线索，以提高其性能。实验中获得的结果总结如下：1）在Gainp/gaAs中观察到与ER相关的发光：ER，O/GAAS双重分解通过在室温下注入电流。 EL光谱以ER-2O线为主导，表明通过电流注入成功形成了ER-2O中心并优先激发中心。2）EL强度的当前密度依赖性揭示了通过当前注射的ER离子的较大令人兴奋的横截面，约为10^<-15> cm^2。 EL强度的时间分辨测量结果证实了大型刺激横截面。它的幅度比掺杂的Si LED（6 x 10^<-17> cm^2）的尺寸大两个级级。时间分辨的反射率暴露了特征倾角；在小于1 ps的情况下，钢降低至负，然后增加超过100 ps。最初阶段的反射率增加，由两个组成部分组成，在很大程度上取决于ER浓度。 ER浓度对组件的依赖性表明，最初的衰减速度更快是由于ER诱导的陷阱捕获的非平衡载体造成的，而O编码较少

项目成果

Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy

有机金属气相外延法生长的 Er,O 共掺杂 GaAs 发光二极管具有极大的 Er 激发截面

• 发表时间: 2003
• 期刊: Materials Research Society Symposium Proceedings, Progress in Semiconductors II, Electronic and Optoelectronic Applications 744
• 作者: Y.Fujiwara;A.Koizumi;K.Inoue;A.Urakami;T.Yoshikane;Y.Takeda
• 通讯作者: Y.Takeda

Terahertz radiation from Er,O-codoped GaAs surface

来自 Er,O 共掺杂 GaAs 表面的太赫兹辐射

• 发表时间: 2005
• 期刊: Physics of Semiconductors, AIP Conference Proceedings 772
• 作者: M.de Boissieu;S.Francoual;Y.Kaneko;T.Ishimasa;K.Nakamura;S.Takemoto;K.Hidaka;T.Tokuno;Y.Fujiwara;M.Suzuki
• 通讯作者: M.Suzuki

Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO

S掺杂和随后的退火对含Er ZnO 1.54μm 附近光致发光的影响

• 发表时间: 2005
• 期刊: Materials Science Forum 475-479
• 作者: Z.Zhou;N.Sato;T.Komaki;A.Koizumi;T.Komori;M.Morinaga;Y.Fujiwara;Y.Takeda
• 通讯作者: Y.Takeda

Injection-type light-emitting devices using rare-earth-doped III-V semiconductors

使用稀土掺杂III-V族半导体的注入型发光器件

• 发表时间: 2004
• 期刊: Oyo Buturi [in Japanese] 73(2)
• 作者: Y.Fujiwara;A.Koizumi;Y.Takeda
• 通讯作者: Y.Takeda

Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique

利用泵浦探针反射技术研究 Er,O 共掺杂 GaAs 中的非平衡载流子动力学

• 发表时间: 2005
• 期刊: Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications 866
• 作者: K.Nakamura;Y.Fujiwara;Y.Fujiwara;Y.Fujiwara
• 通讯作者: Y.Fujiwara