CAREER: Development of High-Efficiency Ultraviolet Optoelectronics: Physics and Novel Device Concepts

职业：高效紫外光电子学的开发：物理学和新颖的设备概念

• 批准号: 1751675
• 负责人: Jing Zhang
• 金额: $ 50.01万
• 依托单位: Rochester Institute of Tech
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-03-15 至 2025-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1751675&HistoricalAwards=false
• 关键词: CAREER; Development; Efficiency; Ultraviolet; Optoelectronics

The objective of this CAREER project is to understand fundamental physics of semiconductor deep ultraviolet emitters through a comprehensive combined experimental and theoretical study, and to identify and demonstrate solutions in the form of novel nanostructures, materials and device concepts for ultraviolet optoelectronics with significantly improved efficiency. To address the fundamental issues from III-Nitride semiconductor ultraviolet light emitting diodes, novel nanostructures, alternative material candidates, and unconventional ultraviolet optoelectronics will be explored to develop next-generation high-efficiency ultraviolet light sources that will have significant impact on the society through applications such as curing of resins and polymers in 3D printing; phototherapy for medical treatment; agricultural plant lighting; water/air disinfection; and bio-agent sensing. This project offers educational training in multidisciplinary areas such as Electrical Engineering, Material Science, and Physics for both undergraduate and graduate students. The outreach plan which will be integrated with the research includes involving students from National Technical Institute for the Deaf, promoting connectivity and representation of females in engineering, and developing training courses and demonstrations for K-12 students and teachers. Technical Description: This CAREER project aims to realize high-efficiency ultraviolet photonic devices based on learning and exploiting the fundamentally new aspects of the physics of photon emission from novel quantum well active region design, alternative materials, and unconventional device concepts. This research will focus on in-depth understanding of fundamental physics, a thorough exploration of light emitting diode device realization, and comprehensive physics-driven characterizations for designing high-efficiency polarization-dependent ultraviolet optoelectronics emitting from 300 nm down to 220 nm. In particular, nanostructured quantum well structures will be proposed and investigated to address the fundamental issue from conventional III-Nitride ultraviolet emitters. The novel physics in these extreme quantum structure active regions will be investigated thoroughly, with the goal of realizing high-efficiency ultraviolet optoelectronics which involves epitaxial growths, material characterizations, device fabrications and measurements, coupled with rigorous theoretical analysis. Alternative material candidates will be explored to serve as active region for ultraviolet photon emitters as well. Unconventional ultraviolet optoelectronic device concepts will be developed to shed light on the pursuit of next-generation high-efficiency ultraviolet light sources.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该职业项目的目的是通过一项全面的结合实验和理论研究来了解半导体深紫外发射器的基本物理学，并以新颖的纳米结构，材料和设备概念的形式识别和证明紫外线光电的概念的形式，并具有显着提高的效率。将探索从III-硝酸半导体紫外线发光二极管，新型纳米结构，替代材料候选物和非常规的紫外线光电子学的基本问题，以发展下一代高效的紫外线光源，这些光源将通过应用于Society的下一代高效紫外线源，以使其对社会产生重大影响。医疗的光疗；农业植物照明；水/空气消毒；和生物代理传感。该项目在多学科领域提供教育培训，例如本科生和研究生的电气工程，材料科学和物理学。将与研究融合的外展计划包括涉及聋人国家技术研究所的学生，促进工程女性的连通性和代表，并为K-12学生和老师开发培训课程和示威。技术描述：这个职业项目旨在基于学习和利用光子发射物理学的根本新方面来实现高效紫外线光子设备，从新颖的量子良好的区域设计，替代材料和非常规设备概念中。这项研究将重点介绍对基本物理学的深入了解，对发光二极管装置实现的彻底探索以及全面的物理驱动的特征，用于设计高效率偏振依赖性的紫外线光电机，从300 nm发射到220 nm。特别是，将提出并研究纳米结构量子井结构，以解决传统的III氮化物紫外线发射器的基本问题。这些极端量子结构中的新物理活性区域将进行彻底研究，其目的是实现高效紫外光电电子药物，涉及外延生长，材料特征，装置构造和测量，并加上严格的理论分析。还将探索替代材料候选物作为紫外线发射器的活性区域。将开发出非常规的紫外线光电设备概念概念，以阐明追求下一代高效紫外线光源。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛影响的审查标准来通过评估来支持的。

项目成果

Inverse Tapered AlGaN Micropillar and Nanowire LEDs for Improved Light Extraction Efficiency at 270 nm

• DOI: 10.1109/jphot.2022.3221353
• 发表时间: 2022-12
• 期刊: IEEE Photonics Journal
• 影响因子: 2.4
• 作者: Bryan Melanson;M. Seitz;Jing Zhang

Proposal and Realization of Vertical GaN Nanowire Static Induction Transistor

• DOI: 10.1109/led.2018.2886246
• 发表时间: 2019-02-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Hartensveld, Matthew;Liu, Cheng;Zhang, Jing
• 通讯作者: Zhang, Jing

Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array

自组装SiO2微球阵列AlGaN基倒装紫外发光二极管的光提取性能分析

• DOI: 10.1117/12.2510488
• 发表时间: 2019
• 期刊: Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array
• 作者: Liu, Cheng;Melanson, Bryan;Ooi, Yu Kee;Hartensveld, Matthew;Zhang, Jing
• 通讯作者: Zhang, Jing

Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor

• DOI: 10.1109/led.2019.2895846
• 发表时间: 2019-03-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Hartensveld, Matthew;Zhang, Jing
• 通讯作者: Zhang, Jing

Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate

AlGaN 衬底上高效 240～260nm 深紫外激光器和发光二极管的物理

• DOI: 10.1063/1.5143723
• 发表时间: 2020
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Liu, Cheng;Zhang, Jing
• 通讯作者: Zhang, Jing