Epitaxial Oxides by ALD

ALD 外延氧化物

• 批准号: 0932834
• 负责人: Brian Willis
• 金额: $ 25.91万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0932834&HistoricalAwards=false
• 关键词: Epitaxial; Oxides; ALD

0932834WillisThis award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).The PI is planning an experimental research program to investigate the growth of epitaxial crystalline oxide layers on semiconductor substrates by atomic layer deposition. Crystalline oxides are an important class of materials that exhibit a rich variety of functional electronic, magnetic, and optical properties, including ferroelectricity, pyroelectricity, piezoelectricity, and ferromagnetism. In addition, oxides can be doped like elemental and compound semiconductors and they can be insulating, conducting, semiconducting, and superconducting. In order to realize the full promise of crystalline oxides, it is necessary to advance the growth engineering, and integrate oxides with semiconductor substrates to make hybrid semiconductor/ crystalline oxide devices. The PI's process is based on the unique properties of the alkaline earth metal oxides and the precision of atomic layer deposition to grow epitaxial oxides on semiconductor substrates including Si, Ge, and GaAs. The process has several advantages over the existing state-of-the-art that is based on molecular beam epitaxy. These advantages include process economics including increased throughput, and lower capital and operating costs, as well as simplifications of the processing due to unique aspects of the atomic layer deposition chemistry. Successful execution of the research program will lead to transformative impacts on the field of electronic materials by enabling a new class of devices based on oxide electronics, and stimulating industrial interest. The intellectual merits of the research are to discover a reactive process based on fundamental chemical interactions and atomic layer deposition to grow epitaxial oxides on semiconductor substrates. The research could advance the knowledge of deposition processes, surface reactions, and materials engineering. It utilizes state-of-the-art concepts in electronic materials and advances the capability for engineering a useful class of materials. The research will also advance understanding of the chemical and structural interactions at semiconductor/ oxide interfaces, which are of interest to modern microelectronics technology. The broader impacts of the research include technology advancement, K-12 education enhancement, and outreach to underrepresented groups. The PI plans an outreach program that will impact high school teachers, high school students, and underrepresented and underprivileged student populations. He will develop a workshop based on microelectronics for the da Vinci program at UConn to provide an inspirational and learning experience for high school teachers from diverse backgrounds. The program will reach out to the Magnet schools of Hartford to promote the underutilized talents of inner city teachers and students. The work will also educate a PhD graduate student and provide research experiences for undergraduate students. Lastly, the work will be integrated into teaching as an educational vehicle for Chemical Engineering and Materials Science students.

0932834Willisthis奖是根据2009年的《美国回收与再投资法》（公法111-5）资助的。PI正在计划一项实验研究计划，以调查通过原子层沉积在半导体底物对半导体底物上的外延晶体氧化物层的增长。结晶氧化物是一类重要的材料类，具有丰富的功能性电子，磁性和光学特性，包括铁电性，pyroleclectricity，Pyroelectricity，Pyzoelecleclectricity和Ferromagnetism。此外，氧化物可以像元素和复合半导体一样被掺杂，它们可以进行绝缘，进行，半导体和超导体。为了实现结晶氧化物的全部希望，有必要推进生长工程，并将氧化物与半导体底物整合在一起，以使混合半导体/晶体氧化物设备制造。 PI的过程基于碱土金属氧化物的独特特性以及原子层沉积的精度，以在包括SI，GE和GAAS在内的半导体底物上生长外延氧化物。该过程比基于分子束外延的现有最新最新方法具有多个优点。这些优势包括流程经济学，包括增加吞吐量，降低资本和运营成本，以及由于原子层沉积化学的独特方面而引起的处理的简化。研究计划的成功执行将通过启用基于氧化物电子产品的新设备并刺激工业兴趣，从而导致对电子材料领域的变革影响。该研究的智力优点是发现基于基本化学相互作用和原子层沉积的反应过程，以在半导体底物上生长外延氧化物。该研究可以提高对沉积过程，表面反应和材料工程的了解。它利用电子材料中的最新概念，并提高了工程有用的材料的能力。这项研究还将提高对半导体/氧化物界面的化学和结构相互作用的了解，这对现代微电子技术感兴趣。这项研究的更广泛影响包括技术进步，K-12教育增强和向代表性不足的群体推广。 PI计划进行一项外展计划，该计划将影响高中教师，高中生，并且代表性不足和贫困学生人数。他将为UConn的Da Vinci计划开设一个基于微电学的研讨会，为来自不同背景的高中老师提供鼓舞人心的学习经验。该计划将接触到哈特福德的磁铁学校，以促进城市内城教师和学生的未充分利用的才能。这项工作还将教育博士研究生，并为本科生提供研究经验。最后，这项工作将纳入教学中，作为化学工程和材料科学专业学生的教育工具。