Fundamental understanding and development of novel high dielectric constant ALD gate oxides on gallium nitride substrates for MOSFET power conversion applications

用于 MOSFET 功率转换应用的氮化镓衬底上新型高介电常数 ALD 栅极氧化物的基本理解和开发

• 批准号: 355520-2012
• 负责人: Cadien, Kenneth
• 金额: $ 1.75万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2016
• 资助国家: 加拿大
• 起止时间: 2016-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=595684
• 关键词: Fundamental; understanding; development; novel; dielectric

Gallium Nitride (GaN) is one of the best candidates for high-temperature, high-power, and high-frequency metal-oxide-semiconductor field-effect transistors (MOSFETs). Power devices made with GaN have the potential to offer a switching speed with a figure of merit more than 500 times greater than that achievable in silicon. The critical component to enable this technology is the development of a robust oxide with low defects and preferential mobility properties that can produce an enhancement mode transistor rather than a depletion mode transistor. However, gate leakage current through the gate oxide and Fermi-level pinning due to large number of interface states at dielectric/GaN interface limit their usage in such applications. Currently, no single material has the ability to cover all the oxide requirements for GaN. Moreover, the oxides must fulfill various requirements such as a large band gap to increase the breakdown voltage. The long term objective of the proposed research program is to develop novel gate oxides for GaN high power MOSFET devices for power conversion applications such as hybrid cars and solar cell arrays. The long term research will take place in collaboration with Professor Douglas Barlage, a device physicist and expert in GaN technology, in Electrical and Computer Engineering at the University of Alberta. The shorter term objectives are to develop a fundamental understanding of the atomic layer deposition (ALD) growth of gate oxides on GaN, and to develop novel GaN gate oxides and structures. The main focus will be to investigate the combinations of high-k metal oxides in the form of nanolaminates to introduce all the required properties, such as large bandgap materials and large dielectric constant, to the gate material of GaN MOS structure. The oxides will be deposited by ALD to benefit from the many advantages of this technique, including excellent control on thickness, deposition at low temperatures, pinhole-free, and highly conformal thin films. The effect of chemistry, microstructure, and stoichiometry of these oxides on the electrical properties of atomic layer deposited films will be explored.

硝酸韧带（GAN）是高温，高功率和高频金属氧化金属 - 氧化物 - 氧化物 - 磁导体场效应晶体管（MOSFET）的最佳候选者之一。用GAN制造的电源设备有可能提供的开关速度，其功绩的数字比硅中可实现的速度高500倍。启用该技术的关键组件是开发具有低缺陷和优先迁移率特性的强大氧化物，这些氧化物可以产生增强模式晶体管而不是耗尽模式晶体管。但是，由于介电/gan接口处的大量界面状态在此类应用中限制了它们的用法，因此通过大量的接口状态限制了通过氧化门氧化物和Fermi级别固定的栅极泄漏电流。当前，没有任何材料能够涵盖GAN的所有氧化物要求。此外，氧化物必须满足各种要求，例如大带隙，以增加故障电压。拟议的研究计划的长期目标是开发用于GAN高功率MOSFET设备的新型门氧化物，用于电源转换应用，例如混合动力汽车和太阳能电池阵列。长期研究将与艾伯塔大学电气和计算机工程的设备物理学家兼专家道格拉斯·巴拉奇（Douglas Barlage）合作进行。较短的术语目标是对GAN氧化物在GAN上的原子层沉积（ALD）生长产生基本理解，并开发新型的GAN GATE氧化物和结构。主要的重点是以纳米胺的形式研究高K金属氧化物的组合，以引入所有必需的特性，例如大带隙材料和大型介电常数，以将其引入GAN MOS结构的栅极材料。 ALD将沉积氧化物，以从该技术的许多优势中受益，包括对厚度，低温下沉积，无针孔和高度保形薄膜的良好控制。这些氧化物的化学，微结构和化学计量法对原子层沉积膜的电性能的影响。