CAREER: Perovskite Buffer Layers for Compound Semiconductor-Silicon Heteroepitaxy

职业：用于化合物半导体-硅异质外延的钙钛矿缓冲层

• 批准号: 0239006
• 负责人: Brian Willis
• 金额: $ 40.44万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-02-01 至 2009-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0239006&HistoricalAwards=false
• 关键词: CAREER; Perovskite; Buffer; Layers; Compound

This research program will investigate the use of perovskite buffer layers for compound semiconductor-on-silicon heteroepitaxy. Perovskite buffer layers offer potential solutions to lattice mismatch challenges in heteroepitaxy. During the growth of perovskite films on silicon, oxygen diffuses to the interface and creates an amorphous SiOx region that separates the perovskite epitaxial layer from the silicon substrate. The perovskite layer can then act as a template for subsequent epitaxial layers such as compound semiconductors. The research program will determine if the amorphous SiOx interface sufficiently relieves the lattice mismatch strain generated in the epitaxial layers and also traps dislocation defects at the interface. Perovskite "buffer" layers may therefore enable low defect density heteroepitaxy on silicon substrates. The technology has enormous potential to create new designs that integrate optically active devices with the power of silicon CMOS logic. The research will provide new scientific understanding of metalorganic chemical vapor deposition and atomic layer deposition methods to be used for the growth of strontium nucleation layers and SrTiO3 buffer layers. Experimental investigations will develop the chemistry and reaction engineering fundamentals necessary for successful growth of high quality epitaxial perovskite layers on silicon. The perovskite buffer layers will be used as substrates for III-V/silicon heteroepitaxy. Investigations will analyze the gas phase and surface reaction chemistry of the strontium and titanium organometallic precursors. Research efforts will optimize the materials quality through reactor design and operation. Special challenges include controlling precursor transport to the reaction zone, avoiding premature adduct formation and/or decomposition, and achieving high quality monocrystalline, epitaxial layers.

该研究计划将调查钙钛矿缓冲层用于复合半导体杂质杂质核的使用。 钙钛矿缓冲层为异性恋中的格子不匹配挑战提供了潜在的解决方案。 在硅硅酸盐在硅上的生长过程中，氧气扩散到界面，并产生一个无定形的Siox区域，该区域将钙钛矿外延层与硅底物分开。 然后，钙钛矿层可以充当随后外延层（例如复合半导体）的模板。 该研究计划将确定非晶的Siox界面是否充分缓解了外延层中产生的晶格不匹配菌株，并在界面处陷入脱位缺陷。 因此，钙钛矿“缓冲液”层可以使硅底物上的低缺陷密度杂质息。 该技术具有创建新设计的巨大潜力，可以将光学活动设备与硅CMOS逻辑的力量集成在一起。 这项研究将为金属有机化学蒸气沉积和原子层沉积方法提供新的科学理解，用于生长锶成核层和SRTIO3缓冲层。 实验研究将发展化学和反应工程基础知识，这是成功生长在硅上成功生长的高质量外延钙岩层所必需的。 钙钛矿缓冲层将用作III-V/硅杂质结构的底物。 研究将分析锶和钛有机金属前体的气相和表面反应化学。 研究工作将通过反应堆设计和操作来优化材料质量。 特殊挑战包括控制前体向反应区的运输，避免形成过早的加合物形成和/或分解，并实现高质量的单晶层，外延层。