Advanced Gate Dielectrics for Silicon Carbide Metal Oxide Semiconductor Application

用于碳化硅金属氧化物半导体应用的先进栅极电介质

• 批准号: 9906255
• 负责人: Veena Misra
• 金额: $ 17.99万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-10-01 至 2003-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9906255&HistoricalAwards=false
• 关键词: Advanced; Gate; Dielectrics; Silicon; Carbide

9906255MisraSilicon carbide is an attractive material for high power, high frequency and high temperature applications. The ability of SiC to grow insulating SiO2 layers by thermal oxidation has been used in the fabrication of metal oxide semiconductor, MOS, devices such as field effect transistors, FETs. Significant research has been conducted on the SiC/SiO2 interface, but to date, i) a high density of interface states and fixed oxide charge and ii) poor reliability limit the functionality of SiC FET devices. Additionally, differences have been observed in the interface state densities between the 6H and 4H polytypes that are not understood, but may be related to differences between the band structures of these two polytypes, or alternatively to differences in the way suboxide, SiOx, bonding in the thermally grown oxide lines up with the interface band structure. The electric field in the SiO2 layer is higher than the peak field in the semiconductor by the ratio of dielectric constants. Since SiC devices are operated at very high electric fields, the gate dielectric field can become precariously high resulting in reliability problems.This proposal will investigate several areas that are currently challenging the successful development of high performance SiC MOS devices. First, an atomic level understanding of the interfacial properties of SiO2 and SiC and its effect on the channel mobility must be obtained through electrical and analytical techniques. The disparate behavior between the 6H and 4H SiC polytypes is not understood and needs to be explored at the atomic level. Additionally, the implementation of advanced dielectrics on SiC to improve reliability problems must also be considered. SiC devices are operated at higher fields than Si devices. Therefore, a dielectric with a higher dielectric constant than SiO2 will experience a lower electric field. This warrants the investigation of high-K dielectrics such as Si3N4,A12O3, Ta2O5, TiO2 and ZrSiO4, etc. Many of these dielectrics are already being aggressively studied for their potential implementation on Si.This program address the interfacial issues discussed above by applying remote plasma-assisted processing and rapid thermal processing to the formation of SiC-dielectric interfaces. This includes interfacial nitridation and implementation of alternative high-K dielectrics. The program will combine advanced analytical approaches to interface characterization, and as for Si device technology establish important links betweenelectrical behavior and atomic scale structure and bonding.***

9906255Misrasilicon Carbide是高功率，高频和高温应用的有吸引力的材料。 SIC通过热氧化生长绝缘SiO2层的能力已用于制造金属氧化物半导体，MOS，诸如野外效应晶体管，FET的设备。 已经对SIC/SIO2界面进行了重大研究，但是迄今为止，i）界面状态的高密度和固定的氧化物电荷以及ii）差的可靠性限制了SIC FET设备的功能。 另外，在尚不清楚的6H和4H多型之间的界面状态密度中观察到差异，但可能与这两种多型型的带状结构之间的差异有关，或者与亚氧化物，Siox的差异，siox，粘结，键合的差异，热种植的氧化物与界面带结构对齐。 SIO2层中的电场高于半导体中的峰场，而介电常数的比率高。 由于SIC设备在非常高的电场上运行，因此栅极介电场可能会变得不稳定地导致可靠性问题。该提案将调查目前正在挑战高性能SIC SIC MOS设备的成功开发的几个领域。 首先，必须通过电气和分析技术获得对SIO2和SIC界面特性及其对通道迁移率的影响的原子水平的理解。 6H和4H SIC多型之间的不同行为尚不清楚，需要在原子水平上进行探索。 此外，还必须考虑在SIC上实施高级电介质以改善可靠性问题。 SIC设备在比SI设备更高的字段上操作。 因此，比SIO2较高的电介质常数的介电会经历较低的电场。 这需要调查对诸如SI3N4，A12O3，TA2O5，TIO2和ZRSIO4等的高K电介质等。这些介质中的许多已经在积极地研究了其对SI的潜在实现，以解决上面讨论的界面问题，以应用远程问题，以应用远程问题。血浆辅助处理和快速的热处理，以形成SIC-二电接口的形成。 这包括界面硝化和替代高K电介质的实施。 该计划将结合界面表征的先进分析方法，并且对于SI设备，技术在电源行为与原子量表结构与键合之间建立了重要联系。***