SGER: Novel Ultra Fast Heating Platform for In-Situ Study of Nanoparticle Based Devices
SGER:用于纳米颗粒器件原位研究的新型超快速加热平台
基本信息
- 批准号:0811137
- 负责人:
- 金额:$ 6.74万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2008
- 资助国家:美国
- 起止时间:2008-03-01 至 2009-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Abstract-Veena Misra-SGERThe objective of this proposal is to investigate a highly innovative route inthe real-time formation and characterization of nanoparticle based electronic devices viaa revolutionary ultra thin SiC membrane platform that provides ultra-fast temperaturerates (1200degree centigrade/msec). This approach can revolutionize nanostructureformation which can substantially increase the commercialization potential ofnanodevices.Intellectual Merit:In recent years, nanoparticles have gained tremendous interest for their potential use in memory devices, chem-bio sensors and spintronics. However, one of the biggest challenges facing nanoparticle commercialization is the formation of dense, uniform and mono-disperse films. The inability to control kinetics of the anneal conditions, such as temperatures, ramp rates and cool down rates, typically used to form nanoparticles can lead to uncontrolled process leading to undesired sizes and variations. The study of kinetics at the millisecond range affords novel insight into nanostructure formation which will directly influence the device characteristics. Fully fabricated nanoscale devices will be integrated directly on the semiconductor membrane heating while undergoing simultaneous electrical characterization. Nanoscale MOSFETs and two-terminal coulomb blockade devices will be fabricated. The features of C-V and I-V curves, such as periodicity of steps, sharpness of steps, degree of charge storage and coulomb blockade window will be measured. With this system, over a hundred anneal/measurement steps can ultimately be achieved in a matter of seconds. Multiple discrete heaters, fabricated on a single wafer, can further expedite cycles of learning.Broader Impact: This knowledge will impact the fields of memories, sensors, photonics and bioelectronics. The system being proposed here is highly amenable to enhance education modules due to its small footprint and ease of access. We will use this system as a visualization tool for undergraduates to correlate dynamic changes in size and shape of nanostructures to device characteristics in real-time. Broader use of controlled and organized nanostructures will result in commercialization opportunities and give high return on investment in nanotechnology.
摘要 - 韦纳·米斯拉·塞格(Veena Misra-Sger)该提案的目的是研究基于纳米颗粒的电子设备的实时形成和表征的高度创新途径,可通过革命性的超薄SIC膜平台,该平台提供超快速温度(1200Degree Centerrese)。 这种方法可以彻底改变纳米结构形式,从而大大提高纳米版本的商业化潜力。智能优点:近年来,纳米颗粒对它们在记忆设备,化学生物传感器和旋转三位型的潜在使用方面具有极大的兴趣。然而,纳米颗粒商业化面临的最大挑战之一是形成了密集,统一和单分散膜的形成。无法控制退火条件的动力学,例如温度,坡道速率和冷却速率,通常用于形成纳米颗粒,可能会导致不受控制的过程,从而导致不希望的大小和变化。在毫秒范围内的动力学研究提供了对纳米结构形成的新见解,这将直接影响设备特性。完全制造的纳米级设备将直接集成在半导体膜加热上,同时进行同时进行电气表征。将制造纳米级MOSFET和两端库仑封锁装置。将测量C-V和I-V曲线的特征,例如步骤的周期性,步骤的清晰度,电荷存储程度和库仑封锁窗口。使用该系统,最终可以在几秒钟内实现一百多个退火/测量步骤。在单个晶圆上制造的多个离散的加热器可以进一步加快学习周期。BRODER的影响:这种知识将影响记忆,传感器,光子学和生物电子学领域。此处提出的系统非常适合增强教育模块,因为它的占地面积较小和易于访问。我们将使用该系统作为本科生的可视化工具,以实时将纳米结构的大小和形状变化与设备特性相关联。更广泛地使用受控纳米结构将带来商业化机会,并给予纳米技术的高投资回报。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Veena Misra其他文献
Development of plasmonics-active SERS substrates on a wafer scale for chemical and biological sensing applications
开发用于化学和生物传感应用的晶圆级等离子体活性 SERS 基底
- DOI:
10.1109/iedm.2008.4796732 - 发表时间:
2008 - 期刊:
- 影响因子:0
- 作者:
A. Dhawan;Yan Du;Hsin;Donovan N. Leonard;Veena Misra;Mehmet C. Öztürk;M. Gerhold;Tuan Vo - 通讯作者:
Tuan Vo
Hybrid silicon/molecular FETs: a study of the interaction of redox-active molecules with silicon MOSFETs
混合硅/分子 FET:氧化还原活性分子与硅 MOSFET 相互作用的研究
- DOI:
- 发表时间:
2006 - 期刊:
- 影响因子:2.4
- 作者:
S. Gowda;G. Mathur;Qiliang Li;S. Surthi;Veena Misra - 通讯作者:
Veena Misra
Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films
具有超薄氮氧化物栅极薄膜的 n 和 p-MOSFET 的低频噪声特性
- DOI:
10.1109/55.511586 - 发表时间:
1996 - 期刊:
- 影响因子:4.9
- 作者:
P. Morfouli;G. Ghibaudo;T. Ouisse;Eric M. Vogel;W. Hill;Veena Misra;P. Mclarty;J. Wortman - 通讯作者:
J. Wortman
Assessment of Reproductive Indices Changes in Female Specimens of Channa Punctatus Under Varying Habitats in Tarai Region of Uttrakhand
北坎德邦塔莱地区不同生境下雌性斑鳢生殖指数变化的评估
- DOI:
10.5958/2349-4433.2018.00147.2 - 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
C. Singh;Veena Misra;Anup Kumar;Dinesh Kumar;N. Singh - 通讯作者:
N. Singh
Veena Misra的其他文献
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{{ truncateString('Veena Misra', 18)}}的其他基金
EAGER: A novel route for high activation of implanted p-type regions in vertical Gallium Nitride devices.
EAGER:一种在垂直氮化镓器件中高度激活注入 p 型区域的新途径。
- 批准号:
2230090 - 财政年份:2022
- 资助金额:
$ 6.74万 - 项目类别:
Standard Grant
Wearable Nanodevices, Linking Health and Environment: RET in Engineering and Computer Science Site
可穿戴纳米设备,连接健康与环境:工程和计算机科学网站中的 RET
- 批准号:
1407202 - 财政年份:2014
- 资助金额:
$ 6.74万 - 项目类别:
Standard Grant
NSF Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (ASSIST)
NSF 纳米系统先进自供电集成传感器和技术系统工程研究中心 (ASSIST)
- 批准号:
1160483 - 财政年份:2012
- 资助金额:
$ 6.74万 - 项目类别:
Cooperative Agreement
Collaborative Research: High Density Metal and Semiconductor Nanoparticles for Memory and Photonic Applications
合作研究:用于存储器和光子应用的高密度金属和半导体纳米颗粒
- 批准号:
0802157 - 财政年份:2008
- 资助金额:
$ 6.74万 - 项目类别:
Standard Grant
Scalable Strained Silicon MOSFET Technology with Advanced Gatestack Materials
采用先进栅极堆叠材料的可扩展应变硅 MOSFET 技术
- 批准号:
0301238 - 财政年份:2003
- 资助金额:
$ 6.74万 - 项目类别:
Standard Grant
PECASE: Novel Approaches for Integration of Vertical Si Nanoelectronics
PECASE:垂直硅纳米电子集成的新方法
- 批准号:
0093815 - 财政年份:2001
- 资助金额:
$ 6.74万 - 项目类别:
Standard Grant
POWRE: Nano-gate Engineering for Ultra-fast CMOS devices
POWRE:超快 CMOS 器件的纳米门工程
- 批准号:
0074800 - 财政年份:2000
- 资助金额:
$ 6.74万 - 项目类别:
Standard Grant
Advanced Gate Dielectrics for Silicon Carbide Metal Oxide Semiconductor Application
用于碳化硅金属氧化物半导体应用的先进栅极电介质
- 批准号:
9906255 - 财政年份:1999
- 资助金额:
$ 6.74万 - 项目类别:
Standard Grant
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