Reactive Ion Etching in VHF Diode Reactors

VHF 二极管反应器中的反应离子蚀刻

• 批准号: 9419440
• 负责人: Daniel Murnick
• 金额: $ 28.71万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-04-15 至 1998-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9419440&HistoricalAwards=false
• 关键词: Reactive; Ion; Etching; VHF; Diode

Abstract Murnick CTS-9419440 The primary objective of the proposed work is to determine the effectiveness of a VHF diode reactor for reactive ion etching of silicon in CF4 plasmas. The PI's point out that operation at VHF ( 30-300 MHz) frequencies rather than at the standard 13.56 MHz, at least in the case of amorphous silicon deposition, can result in increased deposition rates, reduced damage, and increased film uniformity. The PI's expect the discharge physics to be quite different in the VHF regime as compared to the standard 100 KHz-13.56 MHz range and provide some evidence for this from results of their previous work. They point out that VHF operation has not as yet been applied to etching, and propose to determine etch rates, uniformity, anisotropy and damage for the etching of silicon in CF4 plasmas. Frequencies from 13.56 to 135 MHz, pressures from 1 to 50 mTorr, and a wide range of applied voltages will be employed. If possible, plasma conditions which optimize certain aspects of the etch process will be identified. Diagnostics on the etched materials will be carried out in collaboration with the Army Research Laboratory conveniently located at Fort Monmouth, using standard surface techniques including SEM, profilometry, and TEM. Use will also be made of ARL's microwave interferometer, currently on loan to Rutgers, to measure absolute, spatially averaged plasma densities. Meta-stable argon populations will also be measured using a line-of sight self-absorption technique. The PI's also propose to collaborate with Dr. Meya Meyyappan of Scientific Research Associates in the modeling of the experimental plasmas. He hopes to provide the PI's with a 2-D version of his current 1-D plasma simulation code and will assist in the modeling effort in order to provide support for the interpretation of the etching results.

摘要Murnick CTS-9419440拟议工作的主要目的是确定VHF二极管反应器对CF4等离子体中硅反应性离子蚀刻的有效性。 PI指出的是，至少在无定形硅沉积的情况下，VHF（30-300 MHz）频率的操作，而不是标准13.56 MHz的操作，可能会导致沉积速率增加，损害降低和膜均匀性。 与标准的100 kHz-13.56 MHz范围相比，PI的PI预计排放物理学在VHF制度中会大不相同，并从其先前工作的结果中为此提供了一些证据。 他们指出，VHF操作尚未应用于蚀刻，并建议确定CF4等离子体中硅蚀刻的蚀刻速率，均匀性，各向异性和损害。 从13.56到135 MHz的频率，1至50 mtorr的压力以及范围的施加电压将被采用。 如果可能的话，将确定优化蚀刻过程某些方面的血浆条件。 蚀刻材料上的诊断将与陆军研究实验室合作进行，并使用标准的表面技术在蒙茅斯堡方便地进行。 使用ARL的微波干干涉仪（目前正在借给罗格斯）的使用也将使用，以测量绝对的空间平均等离子密度。 元稳定的氩气也将使用视线自吸收技术进行测量。 PI还建议与科学研究助理的Meya Meyyappan博士合作，以实验等离子体的建模。 他希望为PI提供他当前的1D等离子体模拟代码的2D版本，并将协助建模工作，以便为解释蚀刻结果提供支持。