Reactive ion etching

反应离子蚀刻

基本信息

批准号：
423610064
负责人：
金额：
--
依托单位：
Gottfried Wilhelm Leibniz Universität Hannover
依托单位国家：
德国
项目类别：
Major Research Instrumentation
财政年份：
2019
资助国家：
德国
起止时间：
2018-12-31 至无数据
项目状态：
未结题

来源：
https://gepris.dfg.de/gepris/projekt/423610064?language=en
关键词：
Reactive ion etching

项目摘要

With the requested devices we aim at fabricating nanostructures for quantum optics applications. The group of Prof. Fei Ding has shown in recent years that semiconductor quantum dots are an excellent source of entangled photons pairs. As a next step towards scalable and competitive photon sources, these quantum dots will be embedded in nanostructures. By making optical microcavities (e.g., circular Bragg grating), the quality of the emitted photons should be significantly increased. By using photonic crystals the efficient photon coupling into optical fibers can be investigated. Furthermore, quantum dots are to be integrated into photonic waveguide networks, e.g. to realize multiphoton entanglement on a single microchip. In combination with microstructured piezoelectric materials, the properties of the emitted photons can be tuned deterministically. All these applications require high-precision structures in the nanometer range (structure sizes below 50 nm), for which photolithography and wet-chemical etching processes are not sufficient. For this reason, on the one hand, an electron lithography system is requested which is intended to produce nanostructure pattern in resist. A dry etching system (RIE reactive ion etching) is intended to transfer the structures into the semiconductor material. Precise adjustment of the RIE process parameters allows precise control of the etched nanostructure (depth, anisotropy, surface roughness), which ensures the quality of the emitted photons.

通过所需的设备，我们的目标是制造用于量子光学应用的纳米结构。丁飞教授团队近年来证明，半导体量子点是纠缠光子对的极佳来源。作为实现可扩展和有竞争力的光子源的下一步，这些量子点将嵌入纳米结构中。通过制造光学微腔（例如圆形布拉格光栅），发射光子的质量应该显着提高。通过使用光子晶体，可以研究光子与光纤的有效耦合。此外，量子点将被集成到光子波导网络中，例如在单个微芯片上实现多光子纠缠。与微结构压电材料相结合，可以确定性地调整发射光子的特性。所有这些应用都需要纳米范围内的高精度结构（结构尺寸低于 50 nm），而光刻和湿化学蚀刻工艺不足以满足这些要求。为此，一方面，需要一种旨在在抗蚀剂中产生纳米结构图案的电子光刻系统。干法蚀刻系统（RIE 反应离子蚀刻）旨在将结构转移到半导体材料中。精确调整RIE工艺参数可以精确控制蚀刻的纳米结构（深度、各向异性、表面粗糙度），从而确保发射光子的质量。