Deep x-ray lithography for high aspect ratio applications

适用于高深宽比应用的深度 X 射线光刻

• 批准号: 327243-2009
• 负责人: Achenbach, Sven
• 金额: $ 2.77万
• 依托单位: University of Saskatchewan
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2012
• 资助国家: 加拿大
• 起止时间: 2012-01-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=505611
• 关键词: Deep; ray; lithography; aspect; ratio

Our technologically driven world constantly demands improved performance in all classes of devices ranging from cellular phones to automotive sensors and from medical implants to hard disk read/write heads. This generally requires reduced geometric dimensions, and micro- and nanotechnology are therefore more and more often replacing conventional fabrication technologies. One fabrication approach delivering outstanding structure quality, and therefore device performance, is deep X-ray lithography (XRL) and the LIGA process. These techniques will finally be available in Canada as SyLMAND, the Synchrotron Laboratory for Micro and Nano Devices at the Canadian Light Source in Saskatoon, gets operational.

我们的技术驱动的世界不断要求提高所有类别设备的性能，从手机到汽车传感器，从医疗植入物到硬盘读/写头。这通常需要减小几何尺寸，因此微米和纳米技术越来越频繁地取代传统的制造技术。深度 X 射线光刻 (XRL) 和 LIGA 工艺是一种可提供出色结构质量和器件性能的制造方法。随着位于萨斯卡通加拿大光源的微纳米器件同步加速器实验室 SyLMAND 投入运行，这些技术最终将在加拿大使用。