Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
基本信息
- 批准号:RGPIN-2019-06009
- 负责人:
- 金额:$ 1.97万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2020
- 资助国家:加拿大
- 起止时间:2020-01-01 至 2021-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Micro-electro-mechanical systems (MEMS) increasingly replace macroscopic devices for improved performance. Many MEMS processes to date are silicon-based and support a planar architecture. Extending the materials selection and increasing the structural height to enable a vertical-wall architecture would allow, e. g., higher throughput micro reactors or higher sensitivity micro sensors. Deep X-ray lithography (XRL) can theoretically produce such high quality polymer or metal microstructures. They can have a large structural height (up to millimeters) and optically smooth, vertical sidewalls. The aspect ratio, defined as the structural height relative to the minimum lateral dimensions, can exceed 100:1. XRL, however, requires synchrotron radiation from an electron storage ring and is an extremely complex process. Its full potential is far from being reached, and XRL therefore still remains a niche technology with limited availability.
The overarching question of my research is how we can contribute to fundamental improvements of XRL process technologies to allow for widespread application in the fabrication of high quality micro devices. This drives my objectives over the next 5 years to innovate XRL processing by developing high quality and rapid prototyping XRL mask making processes, and to apply these capabilities in the microfabrication of advanced X-ray optical elements and radio frequency (RF) MEMS. To achieve these goals, we will use the world-unique capabilities of my lab SyLMAND, the Synchrotron Laboratory for Micro and Nano Devices at the Canadian Light Source in Saskatoon, which I had designed to overcome pre-existing bottlenecks in XRL process capabilities and which started operations last year. Pursuing our goals is also based on our recently developed disruptive new XRL mask fabrication technology to improve fabrication timelines and cost by about an order of magnitude.
We will develop a high resolution XRL mask technology that increases the achievable lateral resolution and vertical structure height of our XRL devices by about an order of magnitude each. This is a precondition to innovate X-ray optical elements using XRL techniques to focus synchrotron radiation for analysis in basic science and technology. Applications areas of such ultra high aspect ratio refractive lenses and zone plates include environmental and biological sciences and material design. Another outcome will be the fabrication of vertical wall RF MEMS components where smooth, high aspect ratio sidewalls are utilized to collaboratively develop wireless devices. We will demonstrate an advanced integrated, compact mm-wave artificial antenna array suitable for the emerging 5G wireless application standard used in, e.g., next-generation cell phones. In executing this research program, 7 HQP will be trained to fill demand of experts in key technologies such as materials development and communications technologies.
微机电系统 (MEMS) 越来越多地取代宏观设备以提高性能。迄今为止,许多 MEMS 工艺都是基于硅的,并且支持平面架构。扩大材料选择并增加结构高度以实现垂直墙架构将允许,例如。例如,更高通量的微型反应器或更高灵敏度的微型传感器。深度X射线光刻(XRL)理论上可以产生如此高质量的聚合物或金属微结构。它们可以具有较大的结构高度(高达毫米)和光学光滑的垂直侧壁。纵横比定义为结构高度相对于最小横向尺寸的比例,可以超过 100:1。然而,XRL 需要来自电子存储环的同步加速器辐射,并且是一个极其复杂的过程。它的全部潜力还远没有被充分发挥,因此 XRL 仍然是一种可用性有限的利基技术。
我研究的首要问题是我们如何为 XRL 工艺技术的根本改进做出贡献,以使其在高质量微型器件的制造中得到广泛应用。这推动了我在未来 5 年的目标,通过开发高质量和快速原型 XRL 掩模制造工艺来创新 XRL 处理,并将这些功能应用于先进 X 射线光学元件和射频 (RF) MEMS 的微加工。为了实现这些目标,我们将利用我的实验室 SyLMAND(萨斯卡通加拿大光源微纳米器件同步加速器实验室)的世界独特能力,我设计该实验室的目的是克服 XRL 工艺能力中现有的瓶颈,并且去年开始运营。追求我们的目标还基于我们最近开发的颠覆性新型 XRL 掩模制造技术,以将制造时间和成本提高约一个数量级。
我们将开发一种高分辨率 XRL 掩模技术,将 XRL 器件可实现的横向分辨率和垂直结构高度分别提高约一个数量级。这是利用XRL技术聚焦同步加速器辐射进行基础科学技术分析的X射线光学元件创新的前提。这种超高纵横比折射透镜和波带片的应用领域包括环境和生物科学以及材料设计。另一个成果是垂直壁 RF MEMS 组件的制造,其中光滑、高深宽比的侧壁用于协作开发无线设备。我们将展示一种先进的集成紧凑型毫米波人工天线阵列,适用于下一代手机等新兴的 5G 无线应用标准。在执行该研究计划时,将培训7名总部人员,以满足材料开发和通信技术等关键技术专家的需求。
项目成果
期刊论文数量(0)
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专利数量(0)
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Achenbach, Sven其他文献
Numerical Modelling of a Nanopore-based Resistive-Pulse Sensor for Detection of Biomolecules
- DOI:
10.1109/embc44109.2020.9176090 - 发表时间:
2020-01-01 - 期刊:
- 影响因子:0
- 作者:
Berkenbrock, Jose-Alvim;Scherer, Torsten;Achenbach, Sven - 通讯作者:
Achenbach, Sven
X-ray lithography for devices with high aspect ratio polymer submicron structures
- DOI:
10.1016/j.mee.2007.01.154 - 发表时间:
2007-05-01 - 期刊:
- 影响因子:2.3
- 作者:
Mappes, Timo;Achenbach, Sven;Mohr, Juergen - 通讯作者:
Mohr, Juergen
A polymer-based nano-resistive pulse sensor for detection of biomolecules: fabrication and simulation
- DOI:
10.1109/nano47656.2020.9183598 - 发表时间:
2020-01-01 - 期刊:
- 影响因子:0
- 作者:
Berkenbrock, Jose-Alvim;Wells, Garth;Achenbach, Sven - 通讯作者:
Achenbach, Sven
Low-Profile Artificial Grid Dielectric Resonator Antenna Arrays for mm-Wave Applications
- DOI:
10.1109/tap.2019.2907610 - 发表时间:
2019-07-01 - 期刊:
- 影响因子:5.7
- 作者:
Mazhar, Waqas;Klymyshyn, David M.;Achenbach, Sven - 通讯作者:
Achenbach, Sven
Polymer-based X-ray masks patterned by direct laser writing
- DOI:
10.1063/1.5041916 - 发表时间:
2018-11-01 - 期刊:
- 影响因子:1.6
- 作者:
Achenbach, Sven;Wells, Garth;Hanson, Jack - 通讯作者:
Hanson, Jack
Achenbach, Sven的其他文献
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{{ truncateString('Achenbach, Sven', 18)}}的其他基金
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
- 批准号:
RGPIN-2019-06009 - 财政年份:2022
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
- 批准号:
RGPIN-2019-06009 - 财政年份:2021
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
High resolution zone plates fabricated by soft X-ray lithography for tomographic soft X-ray analysis applied in the designing and screening of potential Covid-19 drugs
通过软 X 射线光刻技术制造的高分辨率波带片,用于断层扫描软 X 射线分析,应用于潜在 Covid-19 药物的设计和筛选
- 批准号:
551062-2020 - 财政年份:2020
- 资助金额:
$ 1.97万 - 项目类别:
Alliance Grants
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
- 批准号:
RGPIN-2019-06009 - 财政年份:2019
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
- 批准号:
327243-2009 - 财政年份:2015
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Micro and Nano Device Fabrication
微纳器件制造
- 批准号:
1000215803-2009 - 财政年份:2014
- 资助金额:
$ 1.97万 - 项目类别:
Canada Research Chairs
Micro and Nano Device Fabrication
微纳器件制造
- 批准号:
1000215803-2009 - 财政年份:2013
- 资助金额:
$ 1.97万 - 项目类别:
Canada Research Chairs
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
- 批准号:
327243-2009 - 财政年份:2012
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Micro and Nano Device Fabrication
微纳器件制造
- 批准号:
1000215803-2009 - 财政年份:2012
- 资助金额:
$ 1.97万 - 项目类别:
Canada Research Chairs
Micro and Nano Device Fabrication
微纳器件制造
- 批准号:
1000215803-2009 - 财政年份:2011
- 资助金额:
$ 1.97万 - 项目类别:
Canada Research Chairs
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Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
- 批准号:
RGPIN-2019-06009 - 财政年份:2022
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
- 批准号:
RGPIN-2019-06009 - 财政年份:2021
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
- 批准号:
RGPIN-2019-06009 - 财政年份:2019
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
- 批准号:
327243-2009 - 财政年份:2015
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
- 批准号:
327243-2009 - 财政年份:2012
- 资助金额:
$ 1.97万 - 项目类别:
Discovery Grants Program - Individual