Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures

高深宽比聚合物微结构的深度 X 射线光刻

基本信息

  • 批准号:
    RGPIN-2019-06009
  • 负责人:
  • 金额:
    $ 1.97万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Discovery Grants Program - Individual
  • 财政年份:
    2022
  • 资助国家:
    加拿大
  • 起止时间:
    2022-01-01 至 2023-12-31
  • 项目状态:
    已结题

项目摘要

Micro-electro-mechanical systems (MEMS) increasingly replace macroscopic devices for improved performance. Many MEMS processes to date are silicon-based and support a planar architecture. Extending the materials selection and increasing the structural height to enable a vertical-wall architecture would allow, e. g., higher throughput micro reactors or higher sensitivity micro sensors. Deep X-ray lithography (XRL) can theoretically produce such high quality polymer or metal microstructures. They can have a large structural height (up to millimeters) and optically smooth, vertical sidewalls. The aspect ratio, defined as the structural height relative to the minimum lateral dimensions, can exceed 100:1. XRL, however, requires synchrotron radiation from an electron storage ring and is an extremely complex process. Its full potential is far from being reached, and XRL therefore still remains a niche technology with limited availability. The overarching question of my research is how we can contribute to fundamental improvements of XRL process technologies to allow for widespread application in the fabrication of high quality micro devices. This drives my objectives over the next 5 years to innovate XRL processing by developing high quality and rapid prototyping XRL mask making processes, and to apply these capabilities in the microfabrication of advanced X-ray optical elements and radio frequency (RF) MEMS. To achieve these goals, we will use the world-unique capabilities of my lab SyLMAND, the Synchrotron Laboratory for Micro and Nano Devices at the Canadian Light Source in Saskatoon, which I had designed to overcome pre-existing bottlenecks in XRL process capabilities and which started operations last year. Pursuing our goals is also based on our recently developed disruptive new XRL mask fabrication technology to improve fabrication timelines and cost by about an order of magnitude. We will develop a high resolution XRL mask technology that increases the achievable lateral resolution and vertical structure height of our XRL devices by about an order of magnitude each. This is a precondition to innovate X-ray optical elements using XRL techniques to focus synchrotron radiation for analysis in basic science and technology. Applications areas of such ultra high aspect ratio refractive lenses and zone plates include environmental and biological sciences and material design. Another outcome will be the fabrication of vertical wall RF MEMS components where smooth, high aspect ratio sidewalls are utilized to collaboratively develop wireless devices. We will demonstrate an advanced integrated, compact mm-wave artificial antenna array suitable for the emerging 5G wireless application standard used in, e.g., next-generation cell phones. In executing this research program, 7 HQP will be trained to fill demand of experts in key technologies such as materials development and communications technologies.
微机械系统(MEMS)越来越代替宏观设备,以提高性能。迄今为止,许多MEMS流程都是基于硅的,并支持平面体系结构。扩展材料选择并增加结构高度以实现垂直壁架构,e。 g。,较高的吞吐量微反应器或较高灵敏度的微型传感器。深X射线光刻(XRL)理论上可以产生这样的高质量聚合物或金属微观结构。它们可以具有较大的结构高度(最多可达毫米),并具有光滑的垂直侧壁。纵横比定义为相对于最小横向尺寸的结构高度可能超过100:1。然而,XRL需要从电子存储环上进行同步辐射,并且是一个极其复杂的过程。它的全部潜力远非达到,因此XRL仍然是一项利基技术,可用性有限。我的研究的总体问题是,我们如何为XRL流程技术的基本改进做出贡献,以便在制造高质量的微型设备中广泛应用。这在未来5年内驱动了我的目标,以开发高质量和快速原型XRL掩码制作过程来创新XRL处理,并将这些功能应用于高级X射线光学元素和射频(RF)MEMS的微加工中。为了实现这些目标,我们将使用我的实验室Sylmand的世界唯一功能,萨斯卡通的加拿大光源的微型和纳米设备的同步器实验室,我旨在克服XRL过程功能和哪些瓶颈,去年开始运营。追求我们的目标也基于我们最近开发的破坏性新的XRL面具制造技术,以提高制造时间表和成本的数量级。我们将开发高分辨率XRL掩码技术,该技术将XRL设备的可实现的横向分辨率和垂直结构高度提高大约一个数量级。这是使用XRL技术创新X射线光学元素的前提,以聚焦同步辐射进行基础科学和技术分析。这种超高纵横比折光镜和区域板的应用区域包括环境和生物科学以及材料设计。另一个结果将是制造垂直壁RF MEMS组件,在该组件中,光滑,高纵横比侧壁可用于协作开发无线设备。我们将展示一个高级集成的,紧凑的MM波人造天线阵列,适用于新兴的5G无线应用标准,例如下一代手机。在执行该研究计划时,将对7个HQP进行培训,以满足材料开发和通信技术等关键技术专家的需求。

项目成果

期刊论文数量(0)
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Achenbach, Sven其他文献

Numerical Modelling of a Nanopore-based Resistive-Pulse Sensor for Detection of Biomolecules
A polymer-based nano-resistive pulse sensor for detection of biomolecules: fabrication and simulation
X-ray lithography for devices with high aspect ratio polymer submicron structures
  • DOI:
    10.1016/j.mee.2007.01.154
  • 发表时间:
    2007-05-01
  • 期刊:
  • 影响因子:
    2.3
  • 作者:
    Mappes, Timo;Achenbach, Sven;Mohr, Juergen
  • 通讯作者:
    Mohr, Juergen
Low-Profile Artificial Grid Dielectric Resonator Antenna Arrays for mm-Wave Applications
Polymer-based X-ray masks patterned by direct laser writing
  • DOI:
    10.1063/1.5041916
  • 发表时间:
    2018-11-01
  • 期刊:
  • 影响因子:
    1.6
  • 作者:
    Achenbach, Sven;Wells, Garth;Hanson, Jack
  • 通讯作者:
    Hanson, Jack

Achenbach, Sven的其他文献

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{{ truncateString('Achenbach, Sven', 18)}}的其他基金

Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
  • 批准号:
    RGPIN-2019-06009
  • 财政年份:
    2021
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
  • 批准号:
    RGPIN-2019-06009
  • 财政年份:
    2020
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
High resolution zone plates fabricated by soft X-ray lithography for tomographic soft X-ray analysis applied in the designing and screening of potential Covid-19 drugs
通过软 X 射线光刻技术制造的高分辨率波带片,用于断层扫描软 X 射线分析,应用于潜在 Covid-19 药物的设计和筛选
  • 批准号:
    551062-2020
  • 财政年份:
    2020
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Alliance Grants
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
  • 批准号:
    RGPIN-2019-06009
  • 财政年份:
    2019
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
  • 批准号:
    327243-2009
  • 财政年份:
    2015
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Micro and Nano Device Fabrication
微纳器件制造
  • 批准号:
    1000215803-2009
  • 财政年份:
    2014
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Canada Research Chairs
Micro and Nano Device Fabrication
微纳器件制造
  • 批准号:
    1000215803-2009
  • 财政年份:
    2013
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Canada Research Chairs
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
  • 批准号:
    327243-2009
  • 财政年份:
    2012
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Micro and Nano Device Fabrication
微纳器件制造
  • 批准号:
    1000215803-2009
  • 财政年份:
    2012
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Canada Research Chairs
Micro and Nano Device Fabrication
微纳器件制造
  • 批准号:
    1000215803-2009
  • 财政年份:
    2011
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Canada Research Chairs

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Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
  • 批准号:
    RGPIN-2019-06009
  • 财政年份:
    2021
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
  • 批准号:
    RGPIN-2019-06009
  • 财政年份:
    2020
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures
高深宽比聚合物微结构的深度 X 射线光刻
  • 批准号:
    RGPIN-2019-06009
  • 财政年份:
    2019
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
  • 批准号:
    327243-2009
  • 财政年份:
    2015
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
Deep x-ray lithography for high aspect ratio applications
适用于高深宽比应用的深度 X 射线光刻
  • 批准号:
    327243-2009
  • 财政年份:
    2012
  • 资助金额:
    $ 1.97万
  • 项目类别:
    Discovery Grants Program - Individual
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