Process Modeling of Anisotropic Chemical Etching of Silicon

硅各向异性化学蚀刻的过程建模

基本信息

批准号：
10044149
负责人：
SATO Kazuo
金额：
$ 1.98万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

We investigated orientation-dependent anisotropic etching of single-crystal silicon. The group of Nagoya University measured etching rates of silicon using alkaline solutions such as potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) water solutions. They evaluated the orientation dependence in the etching rate for a number of crystallographic orientations under wide ranges of etching conditions in temperature and etchant concentrations.The group of the Univ. of Twente and the Univ. of Nijmegen tried to describe such orientation dependence using a limited number of physical parameters, which used to be used in crystal growth that is the reverse process of etching. They introduced 9 parameters, and by fitting those values to experimental data provided from Nagoya Univ., they succeeded in describing etching rates within an error of 5% for one etching condition using KOH water solution. The results were presented in two international conferences, and will be published in Sensors and Actuators : A. It is our future work to describe orientation dependence for a wide range of etching conditions, because the orientation dependence significantly varies according to the conditions.The group of LAAS/CNRS simulated the etching process in atomic scale using Monte Carlo method based on a model, which considers weakening of silicon back-bonds according to the increase in the number of OH attached to the silicon surface-atom. The simulated orientation dependence was similar to that of the experimental results of TMAH rather than KOH both measured by Nagoya Univ.We organized a workshop focused on silicon anisotropic etching. The first workshop was held in 1998 in Holten, the Netherlands, and going to be held in 2000 in Toulouse, France. We are planning the third in 2002 in Japan.

我们研究了单晶硅的方向依赖性各向异性蚀刻。 Nagoya大学使用碱性溶液（例如氢氧化钾（KOH）和四甲基氨羟基氧化物（TMAH）水溶液）测量了硅蚀刻速率。他们评估了在温度和鼠标浓度的蚀刻条件下，在蚀刻条件下的许多晶体学取向的蚀刻率依赖性。 Twente和Univ。 Nijmegen试图使用有限数量的物理参数来描述这种取向依赖性，这些参数曾经用于晶体生长，这是蚀刻的反向过程。他们引入了9个参数，并通过将这些值拟合到Nagoya Univ提供的实验数据中，他们成功地描述了使用KOH水溶液的一种蚀刻条件的5％误差。结果在两个国际会议中呈现，并将在传感器和执行器中发表：A。我们未来的工作是描述各种蚀刻条件的方向依赖性，因为方向依赖性根据该小组而显着变化。 LAA/CNR的模拟基于模型的Monte Carlo方法模拟了原子量表的蚀刻过程，该方法根据硅表面原子附着的OH数量增加了硅的背键减弱。模拟方向依赖性与TMAH的实验结果相似，而不是由Nagoya Univ测量的KOH。我们组织了一个专注于硅各向异性蚀刻的研讨会。第一个研讨会于1998年在荷兰的霍尔滕举行，将于2000年在法国图卢兹举行。我们计划在2002年在日本进行第三次。