Modeling of orientation-dependent etching of silicon and effects of ions in the solution

硅的方向相关蚀刻和溶液中离子的影响的建模

• 批准号: 19201026
• 负责人: SATO Kazuo
• 金额: $ 28.29万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19201026/
• 关键词: シリコン; 結晶; 異方性エッチング; 不純物イオン; 界面活性剤; 固液界面; FTIR

We investigated wet anisotropic etching of single crystal silicon using alkaline solutions. We clarified the mechanisms of easily changeable anisotropy in the etch rate by a small change in the etching solution contents. It was clarified both theoretically and experimentally that a cupper ion as an impurity in etching solution significantly suppresses etch rate and deteriorates etched surface roughness. Also, we clarified a mechanism of dramatic anisotropy change occurring by a small amount of surfactant added to etching solution. This was first found by our in-situ FTIR observation of liquid-solid interface between etching solution and silicon. By utilizing the variable anisotropy in etch rate, we invented new fabrication processes for 3D microstructures for MEMS applications with a minimal process cost.

我们使用碱性溶液研究了单晶硅对湿的各向异性蚀刻。我们通过蚀刻溶液含量的微小变化来阐明蚀刻速率易于改变的各向异性的机制。从理论和实验上阐明，将其作为蚀刻溶液中的杂质可显着抑制蚀刻速率并恶化蚀刻表面粗糙度。另外，我们阐明了通过添加到蚀刻溶液中的少量表面活性剂发生的急剧各向异性变化的机制。这是我们对蚀刻溶液和硅之间液体固体界面的原位观察到的最初发现的。通过利用蚀刻速率的变量各向异性，我们为MEMS应用程序的3D微观结构发明了新的制造过程，其过程成本最低。

项目成果

Atomistic mechanism for the macroscopic effects induced by small additions of surfactants to alkaline etching solutions

• DOI: 10.1016/j.sna.2009.10.023
• 发表时间: 2010
• 期刊: Sensors and Actuators A-physical
• 影响因子: 4.6
• 作者: M. Gosálvez;P. Pal;B. Tang;Kazuo Sato

An atomistic introduction to anisotropic etching

• DOI: 10.1088/0960-1317/17/4/s01
• 发表时间: 2007-04-01
• 期刊: JOURNAL OF MICROMECHANICS AND MICROENGINEERING
• 影响因子: 2.3
• 作者: Gosalvez, M. A.;Sato, K.;Tanaka, H.
• 通讯作者: Tanaka, H.

Fabrication of a quartz tuning-fork probe with a sharp tip for AFM systems

• DOI: 10.1016/j.sna.2008.08.021
• 发表时间: 2008-11-04
• 期刊: SENSORS AND ACTUATORS A-PHYSICAL
• 影响因子: 4.6
• 作者: Hida, H.;Shikida, M.;Sato, Ka.
• 通讯作者: Sato, Ka.

Fabrication techniques of convex comers in a(100)-silicon wafer using bulk micromachining: a review

使用体微机械加工 (100) 硅片凸角的制造技术：综述

• 发表时间: 2007
• 期刊: Journal of Micromechanics and Microengineering vol.17
• 作者: Prem Pal;K. Sato and Sudhir Chandra
• 通讯作者: K. Sato and Sudhir Chandra

Advanced wet etch bulk micromachining in {100} silicon wafers

{100} 硅片的先进湿法蚀刻体微加工

• 发表时间: 2009
• 作者: Prem Pal;K.Sato
• 通讯作者: K.Sato