Trial manufacture offine finish diamond etching machine using electron, ion, and laser beam.

试制电子、离子、激光束精加工金刚石蚀刻机。

• 批准号: 12650123
• 负责人: IWAO Miyamoto
• 金额: $ 2.05万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650123/
• 关键词: Diamond; Ion beam etching; Irradiation damage; Graphite; XPS; Oxygen gas; Argon gas; specific etching rate; FIB; SOG; ECR; RIE

In this term, we have finished the trial manufacture offine finish diamond etching machine using electron and ion beam. The constitution of this machine is vacuum chamber, assist gas injection nozzle, sample holder, and ECR ion source, which can produce ion beam and electron beam because ofbipolar bias applied to extract grid. Using this machine, acceleration voltage dependence of specific etching rate of diamond with various ion etching methods such as ion beam etching (ME), reactive ion beam etching (REBE), ion beam assisted etching (D3AE) and reactive ion beam assisted etching (RIBAE) were examined. As the results, non-liner dependence was observed between acceleration voltage and specific etching rate. Furthermore, irradiation damage of various ion beam etching was examined with X-ray Photoelectron Spectroscopy (XPS). All of ion beam etching methods caused graphitic transition, however, we found RIBAE was damage less process.

在此期间，我们使用电子和离子束完成了试验制造的饰面钻石蚀刻机。该机器的构成是真空室，有助于气体注入喷嘴，样品持有人和ECR离子源，由于应用于提取网格的贝尔极偏置，它们可以产生离子束和电子束。使用这台机器，使用各种离子蚀刻方法（例如离子束蚀刻（ME），反应性离子束蚀刻（REBE），离子束辅助蚀刻（D3AE）和反应性离子束辅助蚀刻（ribae）（ribae）（ribae）（ribae）（ribae），使用该机器的钻石特异性蚀刻速率的加速电压依赖性）检查。由于结果，在加速度电压和特定蚀刻速率之间观察到了非线依赖性。此外，使用X射线光电子光谱（XPS）检查了各种离子束蚀刻的辐照损伤。所有离子束蚀刻方法引起了石墨过渡，但是，我们发现Ribae是损害较小的过程。