Ultrasonic Microspectroscopy for High-Precision Surface Characterization of Substrates for Electronics Devices

用于电子设备基材高精度表面表征的超声波显微光谱

基本信息

批准号：
09450120
负责人：
KUSHIBIKI Jun-ichi
金额：
$ 8.96万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450120/
关键词：
Ultrasonic microspectroscopy Line-focus-beam acoustic microscopy V(z) curve analysis Leaky surface acoustic wave velocity Electronics materials Device fabrication process Layered structures Acoustic inhomogeneity 漏洩弾性表面波半導体材料評価

项目摘要

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to resolve material problems concerned with single crystal substrate (LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, Si, GaAs) for electronic devices and with proton-exchanged, implanted layers, epitaxial or amorphous films on the substrates used in the device fabrication processes.1. The reliable LFB system with high accuracy in leaky surface-acoustic-wave (LSAW) velocity measured on the water-loaded specimen surface has been established for accurate and efficient characterization of material properties, by developing a temperature-controlled pure water supply system and a sample transfer system. For the system calibration, the standard specimens of GGG, Si, Ge, LiNbOィイD23ィエD2, and LiTaOィイD23ィエD2 has been developed.2. A method of super-precision measurements of lattice parameters by the X-ray diffractometer using the Bond method has been developed, resulting in a very high accuracy of Δd/d<10ィイD1-6ィエD1 for a wide Bragg angle range.3. To eliminate a serious problem of the back reflection effect, occurring for thin specimens such as wafer substrates, a moving average method to obtain a true velocity from apparent LSAW velocities measured as a function of frequency and an approximated correction method useful for a number of measurement points have been developed.4. A method of evaluating single crystals such as LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, and GaAs by the LFB system has been established.5. A method of evaluating and selecting LiNbOィイD23ィエD2 and LiTaOィイD23ィエD2 substrates for SAW devices by the LFB system has been established.6. A method of analyzing and evaluating proton-exchanged layers on Z-cut LiTaOィイD23ィエD2 crystal substrates and ion-implanted layers on Si crystal substrates has been developed and demonstrated.

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to resolve material problems concerning with single crystal substrate (LiNbOi D23E D2, LiTaOi D23E D2, Si, GaAs) for electronic devices and with proton-exchanged, implanted layers, epitaxial or amorphous films on the设备制造过程中使用的底物1。通过开发温度控制的纯供水系统和样品转移系统，已经建立了在水载样品表面上测得的可靠的LFB系统，其在水载样品表面上测得的漏水表面声波（LSAW）速度的准确性和有效表征已经建立。对于系统校准，已经开发了GGG，SI，GE，Linboii D23i D2和Litaoi D23i D2的标准标本。2。已经开发了使用X射线衍射仪对晶格参数进行超精确测量的方法，从而在较大的bragg角范围内导致ΔD/d/d <10.d1-6d1的高精度非常高。3。为了消除对较薄标本（例如Wawver底物）的背部反射效应的严重问题，一种移动平均方法是从频率函数和近似校正方法中测量的明显LSAW速度获得真正速度的移动平均方法。已经建立了一种评估LINBOI D23E D2，LITAOI D23E D2和GAAS等单晶体的方法。5。已经确定了一种评估和选择LINBOI D23E D2和LITAOI D23E D2底物的LFB系统锯设备的方法。6。已经开发并证明了一种分析和评估Z-Cut LitaoII D23E D2晶体底物和Si Crystal底物上离子植入层的质子交换层的方法。