Development of Ultrasonic Microspectroscopy for Characterization of Layered and Damaged Surfaces on Single Crystal Substrates

用于表征单晶基底上的层状和损伤表面的超声波显微光谱学的发展

基本信息

批准号：
10555099
负责人：
KUSHIBIKI Jun-ichi
金额：
$ 8.19万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to analyze material surface properties introduced by slicing, lapping, and polishing to prepare wafer substrates from single crystal ingots or with very thin layers on the substrates formed by proton-exchanged and ion-implanted methods.1. The reliable LFB system with high accuracy in the velocity measurement of leaky surface-acoustic-waves (LSAWs) on the water-loaded specimen surfaces has been established, operating up to 900 MHz using several LFB ultrasonic devices.2. A method of evaluating material surfaces damaged or roughened by measuring longitudinal-wave reflection coefficients as a function of frequency when the waves are incident normally to the specimen surface through a water couplant has been developed.3. A system of the X-ray diffractometer using the Bond method, combined with a temperature controller to realize highly stabilized measurement environment throughout the whole system, has been developed. The system has been demonstrated with a resolution of better than 【minus-plus】0.0001°, increasing the capability of analyzing single crystal surfaces damaged.4. The following experimental simulations have been conducted using the above-mentioned systems and methods :(1) The LFB system in the measurements of the frequency characteristics of LSAW velocities has been applied to characterize two groups of specimens to demonstrate the high sensitivity and usefulness : five specimens of proton-exchanged layers on Z-cut LiTaOィイD23ィエD2 crystal substrates with the depth of 3-100 nm ; and four specimens ion-implanted layers on (100) Si substrates fabricated with the ion concentrations of 10ィイD113ィエD1-10ィイD116ィエD1 cmィイD11-2ィエD1.(2) The X-ray system has been applied to evaluate the surfaces of several specimens with different levels of roughness to demonstrate the high sensitivity and usefulness.

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to analyze material surface properties introduced by slicing, lapping, and polishing to prepare waver substrates from single crystal inductions or with very thin layers on the substrates formed by proton-exchanged and ion-implanted methods.1.已经建立了在水载样品表面上泄漏表面声波（LSAWS）泄漏表面漏气的速度测量的可靠LFB系统，已建立，使用多个LFB超声设备运行高达900 MHz。一种通过测量纵向波反射系数损坏或粗糙的材料表面的方法，当波正常通过水耦合出现在样品表面时，已开发出频率的函数。3。已经开发了使用键合法的X射线衍射仪的系统，并结合了温度控制器，以实现整个系统中高度稳定的测量环境。该系统的分辨率比[缩小加上] 0.0001°更好，从而提高了分析受损的单晶表面的能力。4。已经使用上述系统和方法进行了以下实验模拟：（1）在测量LSAW速度频率特征中的LFB系统已应用于表征两组规格，以证明高灵敏度和有用性：五种质子质量分解的proton-exchanged litaoi d22 syrme scyp cys d2 syrm d2 cyrtraties d2 cyrtraties d2 syrtrates d2 cyrtraties ins of z-cut litaoi d2 syrtrates d2 syrtrates inters nm （100）Si底物上的四个物种离子植入层，其离子浓度为10i D113i D1-10i D116i D116I D1 CMI D1 CMI D11-2I D1。