Prototype Fabrication Research of Ultra-sensitive Optical Sensor Using Charging Effect of Quantum Dots

利用量子点充电效应的超灵敏光学传感器原型制作研究

基本信息

批准号：
10555096
负责人：
YOH Kanji
金额：
$ 7.42万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10555096/
关键词：
Self-assembled InAs Quantum Dot Single Electron Device Quantum Dot Quasi 1-Dimensional Transistor Structure Ultrasensitive Optical Sensor Charging Effect Self-organization Ultra-sensitive Sensor

项目摘要

We have investigated the electronic states of self-assembled InAs dots through electron tunneling spectroscopy and conductance spectroscopy. Both types of measurements were performed based on the built-in device structures which were specially designed together with the self-assembled quantum dots. Both methods plays crutial role to investigate electronic states in the self assembled InAs dots because electron states can be directly monitored unlike commonly performed optical methods such as the photoluminescence measurements. Major results are listed as follows. (I) In order to clarify the effects of dot size variations on the performance of high resolution sensors based on charging effects, we have verified electronic states (1s-like, 1p-like, 1d-like, 2s-like states) and their magnetic fields dependence and that the variations were well resolved by the present electron tunneling method. The average wave function extent in the dots were estimated by the observation of diamagnetic shi … More fts and the results were well accounted for by the estimation based on the dot size estimated by the AFM measurements. The tunneling spectroscopy results were found to be consistent with the far-infrared absorption experiment which were performed by Professor Hirakawa who is one of the member investigators of the present projects. (ii) In order to overcome the size variation effects of the quantum dots, we have proposed and investigated the new device structure which contains several thousands of dots in one device and measures averaged "single dot" states through channel conductance. In addition to the the feature of aviding the dot size variation, the present device structure has also an advantage of increasing the small scattering cross-sections which is the major weakness of the ultra-sensitive optical sensors using charging effects. The present device was verified to be sensitive enough to monitor the electron charging states of an average "single dot". This was the first demonstration to observe shell structures by the built-in conductance methods using heterojunction transistor structures. Less

我们通过电子隧道光谱和电导光谱研究了自组装 InAs 点的电子态，这两种测量都是基于与自组装量子点一起专门设计的内置器件结构。研究自组装 InAs 点中的电子态至关重要，因为与常用的光学方法（例如光致发光测量）不同，可以直接监测电子态。主要结果列出如下（I）为了澄清。为了研究点尺寸变化对基于充电效应的高分辨率传感器性能的影响，我们验证了电子态（类 1s、类 1p、类 1d、类 2s 态）及其磁场依赖性，并且这些变化通过当前的电子隧道方法很好地解决了点中的平均波函数范围是通过反磁石英尺的观察来估计的，并且结果可以通过基于由估计的点尺寸进行的估计得到很好的解释。 AFM 测量发现隧道光谱结果与平川教授进行的远红外吸收实验一致，平川教授是本项目的研究成员之一（ii）为了克服尺寸变化的影响。量子点，我们提出并研究了一种新的器件结构，该结构在一个器件中包含数千个点，并通过通道电导测量平均“单点”状态。器件结构还具有增加小散射截面的优点，这是使用充电效应的超灵敏光学传感器的主要弱点。本发明的器件被证明足够灵敏，可以监测平均“单个”的电子充电状态。点”。这是第一次使用异质结晶体管结构通过内置电导方法观察壳结构的演示。更少