Fabrication of Quantum Wires Based on Selective Doping Mechanism and Its Application to Functional Devices Using Quantum Parallelism

基于选择性掺杂机制的量子线制备及其在量子并行功能器件中的应用

基本信息

批准号：
10450110
负责人：
YOH Kanji
金额：
$ 7.81万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

We have aimed at establishing our original fabrication methods of quantum wires and further developing the method to apply to the realization of the "quantum devices". We have investigated the fabrication and the electronic characterization of the quantum wires grown on facets on (311)A GaAs substrates in addition to the (100) GaAs substrates. Cryogenic temperature measurement on quantum wire transistors showed clear quantum wire characteristics. The major results are described below. (I) We have established a new fabrication methods of device quality quantum wires based on selective doping mechanism on patterned sustrates. Unlike the advanced nano-lithography technique such as electron beam lithography or scanning probe method, the present method was demonstrated to be able to process wafer scale fine structures in one step of growth. The obtained quantum wires were shown to maintain high quality along mm long structurally by Electrostatic Force Microscopy. (ii) Single electron oscill … More tion was observed near pinch-off conditions at 2K. Detailed measurements changing temperature and the external magnetic fields relealed that the potential ondulation along the quantum wire resulted in series of isolated potential pockets of 6meV or so deep. Present results shows degree of flatness of the confinement potential along the mm long quantum wires based on the present method. In addition, we have observed clear conductance oscillations which are clear evidence of 1-dimensional conduction at 77K and 4K. This result strongly indicates that one-dimensional conduction is achieved at up to 77K or more without mode mixing. (iii) Transistor characteristics of the "single wire" transistor were also investigated. The I .5μm gate transistor showed the transconductance of 580mS/mm and 650mS/mm at 300K and 77K respectively. These results belong to high end of the modulation doped transistors based on GaAs/AlGaAs. This result indicates successful fabrication of high quality one-dimensional electron systems. It also revealed extremely small gate leakage current of the order of tens of picoamperes. Together with this low leakage characteristics, the present quantum wire approach was shown to have high potentail of integrated quantum qire transistor circuits based on classical and quantum funcional principles. Less

我们的目标是建立我们最初的量子线制造方法，并进一步开发适用于“量子器件”实现的方法。我们研究了在 (311)A 面上生长的量子线的制造和电子表征。除了(100) GaAs 衬底之外，量子线晶体管的低温温度测量显示出明显的量子线特性。 (I) 我们建立了一种新的器件质量量子线制造方法。与先进的纳米光刻技术（例如电子束光刻或扫描探针方法）不同，本发明的方法基于图案化衬底上的选择性掺杂机制，能够在一步生长中处理晶圆级精细结构。通过静电力显微镜显示，在毫米长的结构上保持了高质量（ii）在 2K 的夹断条件附近观察到了单电子振荡变化的温度和外部磁场。沿着量子线的电势波动导致了一系列深度为 6meV 左右的孤立电势袋，目前的结果显示了基于现有方法的沿着毫米长的量子线的限制电势的平坦度。电导振荡是 77K 和 4K 下一维传导的明显证据。该结果强烈表明，在没有模式混合的情况下，可以在高达 77K 或更高温度下实现一维传导 (iii)。还研究了“单线”晶体管的晶体管特性，I .5μm 栅极晶体管在 300K 和 77K 下的跨导分别为 580mS/mm 和 650mS/mm。这些结果属于基于 GaAs 的调制掺杂晶体管的高端。该结果表明高质量一维电子系统的成功制造，并且还显示出极小的栅极漏电流。加上这种低泄漏特性，目前的量子线方法被证明具有基于经典和量子函数原理的集成量子量子晶体管电路的巨大潜力。