Fabrication of Semiconductor Spin Device -Integration of Spin Transistor and Quantum Dots -

半导体自旋器件的制造-自旋晶体管与量子点的集成-

• 批准号: 14205042
• 负责人: YOH Kanji
• 金额: $ 32.78万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205042/
• 关键词: Spin; ferromagnet; spin-orbit interaction; narrow-gap semiconductor; molecular beam epitaxy; Spin injection; ラシュバ振動

Spin injection from ferromagnet into semiconductor has been investigated and high efficiency spin injection was verified. We have also confirmed the spin transistor operation based on the spin injection technique in Fe/InAs hybrid structure. Itemized research results are listed below.(1)Circular polarization measurements of electroluminescence from Fe/InAs spin diode revealed that the degree of circular polarization of 18-20% and spin injection efficiency of 36-40% is possible.(2)Surface reaction at the Fe/InAs interface has been investigated using Secondary Ion Mass Spectroscopy (SIMS), Transmission Electron Microscopy (TEM) and Reflection High Energy Electron Diffraction (RHEED) during the MBE growth comparing two samples grown at 23℃ and at 175℃. Cross diffusion was observed at the interface in 175℃ sample but not in 23℃ sample. TEM showed atomically abrupt interface in both samples in large part of the region. Although one or two mono-atomic layers of unknown structure were observed in some places, interface reaction was not so clear. RHEED study revealed more island formation of Fe at the initial stage of the Fe growth in 23℃ sample. Lower temperature growth was shown to maintain better interface for better luminescence and spin injection properties.(3)Based on the basic spin injection study in Fe/InAs hybrid system, we have confirmed the spin transistor operation by observing the gate controlled current oscillation in high indiun content InGaAs channel clad by InAlAs barrier layers lattice matched to InP substrate. This is the first observation of spin transistor operation.

我们研究了从铁磁体到半导体的自旋注入，并验证了基于Fe/InAs混合结构的自旋注入技术的自旋晶体管的运行。(1)圆极化。 Fe/InAs自旋二极管的电致发光测量表明，圆偏振度为18-20%，自旋注入效率为36-40%。(2)Fe/InAs自旋二极管的表面反应在 MBE 生长过程中，使用二次离子质谱 (SIMS)、透射电子显微镜 (TEM) 和反射高能电子衍射 (RHEED) 对界面进行了研究，比较了在 23℃ 和 175℃ 下生长的两个样品。尽管存在一两个未知结构的单原子层，但 175℃ 样品中的界面却在 23℃ 样品中显示出原子突变界面。在某些地方观察到，界面反应并不那么清楚。RHEED 研究表明，在 23℃ 样品中，Fe 生长的初始阶段有更多的岛形成，表明较低的生长温度可以保持更好的界面，从而获得更好的发光和自旋注入性能。 (3)基于Fe/InAs混合系统中的基本自旋注入研究，我们通过观察由与InP晶格匹配的InAlAs势垒层包覆的高铟含量InGaAs沟道中的栅控电流振荡，证实了自旋晶体管的运行这是对自旋晶体管操作的首次观察。

项目成果

Y.Katano, T.Doi, H.Ohno, K.Yoh: "Surface potential analysis on doping superlattice by electrostatic force microscope"Appl.Surf.Sci.. 188. 399-402 (2002)

Y.Katano、T.Doi、H.Ohno、K.Yoh：“通过静电力显微镜对掺杂超晶格进行表面电势分析”Appl.Surf.Sci.. 188. 399-402 (2002)

Kanji Yoh, Hiroshi Ohno, Yoshito Katano, Kazuhisa Sueoka, Koichi Mukasa: "Spin injection from a ferromagnetic electrode into a semiconductor through an Fe/InAs junction"Towards the Controllable Quantum Sates -Mesoscopic Superconductivity and Spintronics (

Kanji Yoh、Hiroshi Ohno、Yoshito Katano、Kazuhisa Sueoka、Koichi Mukasa：“通过 Fe/InAs 结从铁磁电极自旋注入半导体”迈向可控量子状态 - 介观超导和自旋电子学 (

Kanji Yoh, Hiroshi Ohno, Y.Katano, K.Sueoka, K.Mukasa, M.E.Ramsteiner: "Spin polarization in photo- and electro-luminescence of InAs and metal/InAs hybrid structures"Semicond.Sci. Technol. 19(April). 386-389 (2004)

Kanji Yoh、Hiroshi Ohno、Y.Katano、K.Sueoka、K.Mukasa、M.E.Ramsteiner：“InAs 和金属/InAs 混合结构的光致发光和电致发光中的自旋偏振”Semicond.Sci。

Y.Katano, T.Doi, H.Ohono, K.Yoh: "Surface potential analysis on doping superlattice by electrostatic force microscope"Appl.Surf.Sci.. 188. 399-402 (2002)

Y.Katano、T.Doi、H.Ohono、K.Yoh：“通过静电力显微镜对掺杂超晶格进行表面电势分析”Appl.Surf.Sci.. 188. 399-402 (2002)

Hiroshi Ohno, Kanji Yoh, Kazuhisa Sueoka, Koichi Mukasa, Atsushi Kawaharazuka, Manfred E.Ramsteiner: "Spin-polarized electron injection through an Fe/InAs junction"Jpn.J.Appl.Phys.Express Lett.. 42. L87-L89 (2003)

Hiroshi Ohno、Kanji Yoh、Kazuhisa Sueoka、Koichi Mukasa、Atsushi Kawaharazuka、Manfred E.Ramsteiner：“通过 Fe/InAs 结的自旋极化电子注入”Jpn.J.Appl.Phys.Express Lett.. 42. L87-L89