Surface reaction process at epitaxial growth of 3C-SiC on Si(001) using organosilicon compounds

使用有机硅化合物在 Si(001) 上外延生长 3C-SiC 的表面反应过程

基本信息

批准号：
14550023
负责人：
YASUI Kanji
金额：
$ 2.18万
依托单位：
Nagaoka University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550023/
关键词：
cubic SiC epitaxial growth surface reaction mass spectroscopy 炭素珪素表面構造

项目摘要

The objective of this project is to understand the reaction processes during the epitaxial growth of 3C-SiC on Si(001) substrates using organosilicon compounds as source materials in order to realize the low temperature epitaxial growth of SiC with excellent properties.In 2002, the initial reaction process of dimethylsilane(DMS) or monomechylsilane(MMS) on Si (2x1) surface was observed in-situ using reflection high-energy electron diffraction(RHEED) and scanning tunneling microscopy(STM) : On the surface of Si c(4x4) structure, which appears in RHEED pattern during incubation time before SiC nucleation, both Si(2x1) and Si c(4x4) structures were observed by STM measurement. From the evaluation of the lattice constant for the both structures by lineprofile measurement, the c(4x4) domain was contracted and the Si(2x1) domain was expanded. SiC islands were not nucleated along atomic steps of the substrate surface but on the terrace. In addition, the SiC islands were grown along <100> azimuth from AFM measurement. This direction agrees with that the positions of carbon atoms diffused into subsurface layer of c(4x4). From these results, it was considered that the SiC islands were formed on the c(4x4) domain.In 2003, radicals and molecules desorbed from the reaction surface were identified using a quadrupole mass spectrometer. Methyl and silyl groups were hardly detected, and hydrogen molecules were only detected during the reaction between MMS(DMS) and Si(2x1) surface. From these results, methyl and silyl groups do not desorb from the surface but decompose into C and Si atoms. The C atoms diffuse into the substrate and the Si atoms compensate dimer vacancies during the formation of c(4x4) structure, and both atoms are incorporated into SiC islands during film growth. From temperature-programmed desorption spectra using the mass spectrometer, the formation of Si-C bonds in the back bonds of Si double occupied dimers(DOD) was confirmed on the c(4x4) surface.

该项目的目的是了解3C-SIC在SI（001）底物上外延生长期间的反应过程，使用有机硅化合物作为原始材料，以实现SIC的低温下支配性能的低温外延生长，具有极好的性能，In 2002，使用Dimethylane（dms）或单座硅烷（DMS）的初始反应过程（使用Dimomechylsilsilsilsilsile（DMS）或单位旋转wase-si（2x）上的SI（2x）（2x）（2xx）（2xx）（2xx）。高能电子衍射（RHEED）和扫描隧道显微镜（STM）：在SI C（4x4）结构的表面上，在SIC成核之前的孵育时间内以Rheed模式出现，SI（2x1）和Si C（4x4）结构均通过STM测量观察到。从通过线条填料测量对两个结构的晶格常数的评估，C（4x4）结构域收缩并扩大了Si（2x1）域。 SIC岛不是沿基材表面的原子步骤成核，而是在露台上。此外，SIC群岛是从AFM测量中沿<100>方化种植的。这个方向与碳原子的位置扩散到C的地下层（4x4）。从这些结果中可以看出，SIC岛是在C（4x4）域上形成的。在2003年，使用四极杆质谱仪鉴定了从反应表面解析的自由基和分子。几乎未检测到甲基和甲硅烷基元基，并且仅在MMS（DMS）和Si（2x1）表面的反应过程中检测到氢分子。从这些结果中，甲基和甲硅烷基团不会从表面解吸，而是分解为C和Si原子。 C原子在C（4x4）结构形成过程中补偿二聚体空位，并在膜生长过程中纳入SIC岛。从使用质谱仪的温度填充光谱中，在C（4x4）表面上确认了Si双占二聚体（DOD）的后键中Si-C键的形成。