CVD method diverted from hydrazine thruster technique for the growth of gallium nitride thin film

CVD法从肼推进器技术转向生长氮化镓薄膜

• 批准号: 24656032
• 负责人: YASUI Kanji
• 金额: $ 2.5万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24656032/
• 关键词: 薄膜; 触媒反応; 窒化物半導体

This research was carried out to establish a new CVD method diverted from hydrazine thruster technique. The preparations of zirconia catalyst dispersed with Ru nanoparticles and complex catalyst comprised of porous Ir fibers dispersed with the Ru nanoparticles were tried. Although the preparation of the zirconia catalyst dispersed with Ru nanoparticles was successful, the preparation of the complex catalyst was unsuccessful. By the supply of hydrazine gas with pulse mode to the Ru nanoparticle dispersed zirconia catalyst, stable exothermic reaction took place, and high-temperature nitrogen precursors were generated. GaN epitaxial films were grown on c-plane sapphire substrates at 600 degree C using the high-energy GaN precursors generated by a reaction between the high-temperature nitrogen precursors and trimethylgallium. The GaN film exhibited a sharp bandedge emission at 364 nm, although a broad emission peak was also observed at 600 nm.

进行了这项研究以建立一种从肼投入机技术转移的新CVD方法。尝试了分散的氧化催化剂的制剂和由多孔IR纤维组成的复杂催化剂，这些催化剂被尝试分散在Ru纳米颗粒中。尽管用Ru纳米颗粒分散的氧化催化剂的制备成功了，但复杂催化剂的制备却没有成功。通过向Ru纳米颗粒分散的氧化锆催化剂的氢津气体的供应，发生了稳定的放热反应，并产生了高温氮前体。 使用高能量氮前体和三甲基甲基甲基的反应产生的高能量GAN前体在600摄氏度的C平面蓝宝石底物上生长GAN外延膜。 GAN膜在364 nm处表现出急剧的bond绕，尽管在600 nm处也观察到了宽的发射峰。

项目成果

触媒反応生成高エネルギー窒素系プリカーサを用いたGaN膜の成長

利用催化反应产生的高能氮基前驱体生长 GaN 薄膜

• 发表时间: 2013
• 作者: 谷川世大;中澤勇太;西山智哉;田村和之;安井寛治
• 通讯作者: 安井寛治

Epitaxial growth of gallium nitride thin films using a catalytic reaction on Ru nanoparticles

利用 Ru 纳米粒子催化反应外延生长氮化镓薄膜

• 发表时间: 2013
• 作者: Yuta Nakazawa;Tomoya Nishiyama;Masahiro Tanikawa;Kazuyuki Tamura;Kanji Yasui
• 通讯作者: Kanji Yasui

Growth of gallium nitride thin films using a catalytic reaction on Ru nanoparticles

利用 Ru 纳米颗粒的催化反应生长氮化镓薄膜

• 发表时间: 2013
• 作者: Yuta Nakazawa;Tomoya Nishiyama;Masahiro Tanikawa;Kazuyuki Tamura;Kanji Yasui
• 通讯作者: Kanji Yasui

Epitaxial growth of gallium nitride thin films by catalytic reaction on Ru Nanoparticles

Ru纳米颗粒催化反应外延生长氮化镓薄膜

• 发表时间: 2014
• 期刊: International Journal of Materials Engineering and Technology
• 作者: Kanji Yasui;Yuusuke Teraguchi;Yuta Nakazawa;Yasuaki Komae
• 通讯作者: Yasuaki Komae