Low temperature growth of 3C-SiC crystal by hydrogen radical assisted plasma enhanced chemical vapor deposition

氢自由基辅助等离子体增强化学气相沉积低温生长3C-SiC晶体

基本信息

批准号：
09650028
负责人：
YASUI Kanji
金额：
$ 1.79万
依托单位：
Nagaoka Universiyt of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650028/
关键词：
hydrogen radical plasma CVD cubic SiC epitaxial growth 立方晶炭素ケイ素

项目摘要

The objective of this project is to realize the low temperature growth of 3C-SiC and epitaxial growth of it on Si substrates utilizing the hydrogen radicals generated by rf plasma.In 1997, as a result of the experiments of crystal growth by triode plasma CVD method and by hybrid plasma CVD method allow temperature (<1000ﾟC) using dimethyichiorosilane and dimethylsilane as source gases, it became clear that the triode plasma CVD method using dimethylsilane was effective and the crystal growth at 600ﾟCwas possible utilizing the method. The crystal growth of SiC at the low temperature was realized under the conditions of low plasma space potential and low electron temperature (<1eV) in the vicinity of the substrate surface. Reducing the hydrogen ion acceralation at sheath region by the suppression of the rf vibration of plasma space potential , the crystallinity of SiC films was further improved. Epitaxial growth on Si(100) and (111) was also successful at 1000ﾟC.Using the triode plasma CVD method, the surface morphplogy of SiC films was more satisfactory than that grown by thermal CVD method.In 1998, the conditions of the dilution ratio of source gas by hydrogen and the reaction pressure were extensively controlled using the turbo molecular pump, which has high evacuation rate, for the growth of epitaxial SiC films. As a result of this experiment, highly oriented SiC epitaxial films with best crystallinity were obtained at reaction pressure of 0,3 Torr and at high dilution rate of hydrogen (>200). By changing the hydrogen dilution ratio, the residual stress of SiC on Si (111) was able to vary from coinpresive to tensile. By control the hydrogen dilution ratio, SiC epitaxial film on Si substrates with low residual stress was able to be obtained.

该项目的目的是实现3C-SIC的低温生长和IT在SI底物上的低温生长，这是利用RF等离子体产生的氢自由基。1997年，由于Triode等离子体的晶体生长实验，通过三位化等离子体CVD方法进行了晶体生长的实验，并允许使用杂化等离子CVD方法（均可使用Hybrid cvd and dimethyyy dimethyyy dimethyyy dimethyyy dimethyyy c）。气体很明显，使用二甲基硅烷的三极等离子体CVD方法有效，并且使用该方法的600℃下的晶体生长可能。在底物表面附近的低血浆空间电位和低电子温度（<1EV）的条件下，SIC的晶体生长在低温下实现。通过抑制血浆空间电势的RF振动来降低鞘区域的氢离子加速度，SIC膜的结晶度得到了进一步改善。 Epitaxial growth on Si(100) and (111) was also successful at 1000ﾟC.Using the triode plasma CVD method, the surface morphphology of SiC films was more satisfactory than that grown by thermal CVD method.In 1998, the conditions of the dilution ratio of source gas by hydrogen and the reaction pressure were extensively controlled using the turbo molecular pump, which has high evacuation rate, for the growth of外延SIC膜。该实验的结果是，在0,3 Torr的反应压力下获得了具有最佳结晶度的高度取向的SIC外延膜，并以高稀释率的氢（> 200）获得。通过改变氢稀释率，SIC在SI上的残留应力（111）能够从共同促进到拉伸。通过对照氢稀释率，可以获得低残留应力的SIC外延膜。