Atomic scale monitoring for epitaxial growth process of 3C-SiC on Si

3C-SiC 在 Si 上外延生长过程的原子尺度监测

基本信息

批准号：
11650028
负责人：
YASUI Kanji
金额：
$ 2.37万
依托单位：
Nagaoka University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650028/
关键词：
cubic SiC methylsilanes RHEED epitaxial growth 水素ラジカル原子レベルモニター

项目摘要

The objective of this project is to understand the reaction processes during the epitaxial growth of 3C-SiC on Si substrates using methylsilanes as source materials in order to realize the low temperature epitaxial growth of SiC with excellent properties.In 1999, from the experiments of crystal growth by low-pressure CVD (LPCVD) and triode plasma CVD using monometylsilane (MMS) as a source gas, the epitaxial growth at 900℃ was successful by triode plasma CVD, while the epitaxial growth was successful at higher temperature than 950℃ by LPCVD.The activation energies of SiC growth were 70kcal/mol in LPCVD and 43kcal/mol in triode plasma CVD, respectively.In 2000, to investigate the growth mechanism of SiC on Si (001) surface, the initial reaction process between dimethylsilane (DMS) and Si (2×1) surface was observed in-situ using reflection high-energy electron diffraction (RHEED). By the DMS supply after raising the substrate temperature to 650-750℃, 3C-SiC spots were observed after incu … More bation time. During the incubation time, Si c(4×4) surface reconstruction was observed. The Si c(4×4) reconstruction was considered to have been a result of the carbon atoms diffused to the Si substrate from adsorbed DMS molecules. The activation energy calculated from the Arrhenius plot of the time until the Si c(4×4) structure appeared was about 16kcal/mol. It was considered that the carbon atoms adsorbed DMS molecules diffused into the Si substrate and formed Si_xC_<1-x> alloys in order to relax the lattice mismatch between Si and SiC during incubation time. The activation energy calculated from the Arrhenius plot on the initial growth rate of SiC formation was about 45kcal/mol. This energy value was close to that of hydrogen desorption from Si surface. In this temperature region, hydrogen atoms of DMS molecules adsorbed on Si surface migrated to Si dangling bonds and thereafter desorbed from Si-H bonds. The hydrogen desorption process from Si surface is considered to be rate-limiting step.Parallel to the above investigation, SiC epitaxial growth was carried out by LPCVD and triode plasma CVD using dimethylsilane as source gas. The activation energies for SiC growth were 90kcal/mol in. In the case of the SiC growth by triode plasma CVD, on the other hand, the activation energy for the epitaxial growth hardly depended on the source materials, i. e. between MMS and DMS. Less

该项目的目的是了解3C-SIC在3C-SIC在SI底物上外延生长期间使用甲基硅烷作为源材料的外延生长，以实现SIC的低温外延生长，具有极好的特性。在1999年，使用低压力的CVD（LPCVD）和Triode Plasyylsmma cvd som cvd som som cvd siC的实验，使用晶体生长的实验。三极管血浆CVD成功的外延生长是成功的，而在LPCVD中，外部截止的生长在高于950°的温度下成功。SIC生长的激活能在LPCVD中为70kcal/mol，在Triode Plasasma cvd中分别在2000年的lpcvd和43kccal/mol。使用反射高能电子衍射（RHEED）观察到二甲基硅烷（DMS）和Si（2×1）表面之间的反应过程。通过将底物温度升高到650-750℃的DMS供应，在Incu之后观察到3C-SIC斑点。在孵育期间，观察到Si C（4×4）表面重建。 Si C（4×4）重建被认为是碳原子从吸附的DMS分子扩散到Si底物的结果。从Arrhenius图中计算出的激活能，直到Si C（4×4）结构出现为大约16kcal/mol。据认为，碳原子吸附的DMS分子扩散到Si底物中并形成SI_XC_ <1-X>合金，以便在孵育期间放松SI和SIC之间的晶格不匹配。根据SIC形成的初始生长速率计算出的激活能量约为45kcal/mol。该能量值接近Si表面的氢解吸。在该温度区域，DMS分子的氢原子吸附在Si表面上的Si悬挂键，然后从Si-H键中解脱出来。与上述研究相比，SIC外延生长是通过LPCVD和三二极管等离子体CVD使用二甲基硅烷作为源气体进行的。 SIC生长的激活能为90kcal/mol。在三极等离子体CVD的SIC生长的情况下，另一方面，外延生长的活化能几乎不取决于源材料。 e。在MMS和DMS之间。较少的