Heteroepitaxial growth of oxide thin film on Si substrate by controlling the interface

控制界面在Si衬底上异质外延生长氧化物薄膜

基本信息

项目摘要

After the Y content dependence of YSZ film material properties was investigated, we confirmed usefulness of the YSZ buffer layr for the PZT film on Si.(1) 100-nm-thick cubic YSZ films with Y content ratios R_Y=2.3-19.7 at.% were heteroepitaxially grown on Si (100) at 800゚C and the crystal phase was kept at room temperature. Also, YSZ films with R_Y=1.2 at.% were kept to be cubic phase even at room temperature until their thickness were 20 nm. However, they were monoclinic at room temperature and were cubic at 800゚C when their thickness was more than 30 nm.(2) In the case of ZrO_2 without Y content, the 10-nm-thick (100) film grew heteroepitaxially on Si (100) substrate and the 100-nm-thick film had monoclinic (100) oriented grains which is about 9゚ off from the surface of the substrate.(3) We obtain electric characteristics of the YSZ films as follows : When the Y content was decreased and cubic phase was kept, the leakage current and the hysteresis width of the C (capacitance) -V (voltage) curve were increased. The hysteresis was due to ion drift. However, further decreasing Y content so that the crystal phase of the film was changed to monoclinic, the leakage current and the hysteresis width were decreased. This is probably because the crystalline quality of the film was degraded by decreasing the Y content in the state of the cubic phase.(4) When PZT film was deposited on the 10-nm-thick YSZ film with R_Y=9.4At.%, no reaction was found between the Si substrate and the PZT film and the ferroelectric property was observed. But, since the thickness of the YSZ film is not thin enough to reduce the operation voltage to 3V,we need to decrease its thickness and to improve the material quality of the film.
在研究了YSZ膜材料属性的Y含量依赖性之后,我们确认了YSZ缓冲液对SI上的PZT膜的有用性。(1)100 nm-thick Cubic YSZ薄膜y含量比r_y = 2.3-19.7 at。在800 c和Syrectal sermentaal seperion sie si siepernown in si cenerpe and consermation and consermation and syrope and consermation in y ysepitagity at y = 2.3-19.7。同样,即使在室温下厚度为20 nm,r_y = 1.2的YSZ膜即使在室温下也是立方相。 However, they were monoclinic at room temperature and were cubic at 800゚C when their thickness was more than 30 nm.(2) In the case of ZrO_2 without Y content, the 10-nm-thick (100) film grow heteroepitaxially on Si (100) substrate and the 100-nm-thick film had monoclinic (100) oriented grains which is about 9゚ off from the surface of the substrate.(3) We获得的YSZ膜的电特性如下:当Y含量降低并保持立方相时,泄漏电流和C(电容)V(电压)V(电压)曲线的磁滞宽度增加。滞后是由于离子漂移引起的。但是,进一步降低Y含量,以便将膜的晶相更改为单斜胶,泄漏电流和滞后宽度降低。这可能是因为薄膜的结晶质量通过减少立方阶段状态的Y含量而降低。(4)当PZT膜沉积在10 nm-Thick YSZ膜上时,R_Y = 9.4AT。%。%,在SI底物和PZT膜和PZT膜之间未发现反应,并在PZT膜之间发现了反应。但是,由于YSZ膜的厚度不足以将操作电压降低到3V,因此我们需要降低其厚度并提高膜的材料质量。

项目成果

期刊论文数量(7)
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Mikio Watanabe: "Heteroepitaxial growth of YSZ films with controlled Y content on Si by reactive sputtering" Shingakugihou (Japanese). 96-349. 19-26 (1996)
Mikio Watanabe:“通过反应溅射在 Si 上异质外延生长具有受控 Y 含量的 YSZ 薄膜”Shingakugihou(日语)。
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Susumu Horita: "Hetero e pitaxial growth of yttria-stsbilized zirlonia film on oxidized silicon by reactive sputtering." Thin Solid Films. 281-282. 28-31 (1996)
Susumu Horita:“通过反应溅射在氧化硅上异质外延生长氧化钇稳定氧化锆薄膜。”
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Susumu Horita: "Interface control of Pb (2rxTi_<1-x>) O_3 thin film on Silicon Substrate with heteroepitaxial YSL buffer layer" Applied Surface Science. (to be published).
Susumu Horita:“具有异质外延 YSL 缓冲层的硅衬底上 Pb (2rxTi_<1-x>) O_3 薄膜的界面控制”应用表面科学。
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Susumu Horita: "Characterization of Pb (ZrxTi_<1-x>) O_3 Thin Film on Silicon Substrate with Heteroepitaxial Yttria-Stabilized Zirconia (YSZ) Buffer Layer" Japanese Journal Applied Physics. 35, 10B. L1357-L1359 (1996)
Susumu Horita:“具有异质外延氧化钇稳定氧化锆 (YSZ) 缓冲层的硅衬底上 Pb (ZrxTi_<1-x>) O_3 薄膜的表征”日本应用物理学杂志。
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Susumu Horita: "Interface control of Pb (ZrxTil-x) O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layr" Applied Surface Science. (to be published).
Susumu Horita:“具有异质外延 YSZ 缓冲层的硅衬底上 Pb (ZrxTil-x) O3 薄膜的界面控制”应用表面科学。
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HORITA Susumu其他文献

HORITA Susumu的其他文献

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{{ truncateString('HORITA Susumu', 18)}}的其他基金

Control of grain size in a low-temperature-crystallized Si film using seed layer
使用籽晶层控制低温结晶硅薄膜的晶粒尺寸
  • 批准号:
    21560324
  • 财政年份:
    2009
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of New FET-Type Ferroelectric Memory with an Intermediate Electrode
具有中间电极的新型 FET 型铁电存储器的开发
  • 批准号:
    15560293
  • 财政年份:
    2003
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Fabrication of single ferroelectric films on silicon substrates by interface control
通过界面控制在硅衬底上制备单层铁电薄膜
  • 批准号:
    12650305
  • 财政年份:
    2000
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Hoteroepitaxial growth of ferroelectric thin film on Si substrate by controlling the interface
控制界面在硅衬底上热外延生长铁电薄膜
  • 批准号:
    09450125
  • 财政年份:
    1997
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)

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