Crystal growth of 3C-SiC on Si substrates by channel epitaxy method

沟道外延法在硅衬底上生长3C-SiC晶体

基本信息

批准号：
13450012
负责人：
NISHINO Shigehiro
金额：
$ 9.54万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450012/
关键词：
channel epitaxy 3C-SiC heteroepitaxial growth selective growth silicon carbide cubic SiC CVD method vapor phase growth 横方向成長エアーブリッジ構造ファセット成長 ELO SiC on Si 立方晶 SiC EL0

项目摘要

This study reports on heteroepitaxial growth of 3C-SiC on Si substrate with channel epitaxy method in order to reduce the high density of defects and the strain in the 3C-SiC epilayer. It has been necessary to investigate the epitaxial growth close to the 3C-SiC/Si interface. 3C-SiC layer was grown mainly on a (111) and (100) silicon substrates by using Si2(CH3)6 (Hexamathyldisilane : HMDS). The diameter of each 3C-SiC island depended on the temperature of CVD growth at an early stage of epitaxial growth of 3C-SiC on Si substrate.Three-dimensional fine structures were formed by using "micro-channel epitaxy (MCE)". It was important to parepare the line and space structures by Reactive Ion Etching method. Line and space interval is a key to obtain good channel epitaxy. The crystallinity of formed in MCE became like polycrystalline without the control of nucleation and growth. This result may be improved by close control of experimental parameters at initial stage of 3C-SiC grown on Si substrates. T-shape pattern was formed on the Si(100) substrate and this structure was effective to get channel epitaxy. In this case, we call this shape as vertial channel epitaxy. Epitaxial layer was grown on the top of T-shape area not from the channel in the Si substrate. Carbonization was a key to obtain smooth epi-layer on the T-shape plate. Once epilayers extends nicely on the T-shape area, those layers coalescences to neighbor epilayer. Coalescenced region was examine by TEM. Annihilation of defects should be studied in detail.

本研究报告了采用沟道外延方法在硅衬底上异质外延生长3C-SiC，以减少3C-SiC外延层中的高缺陷密度和应变。有必要研究靠近 3C-SiC/Si 界面的外延生长。 3C-SiC层主要通过使用Si2(CH3)6（六甲基二硅烷：HMDS）在（111）和（100）硅衬底上生长。每个3C-SiC岛的直径取决于3C-SiC在Si衬底上外延生长的早期阶段CVD生长的温度。采用“微通道外延（MCE）”形成三维精细结构。采用反应离子刻蚀方法制备线和空间结构非常重要。线和空间间隔是获得良好沟道外延的关键。在MCE中形成的结晶度变得像多晶，没有对成核和生长的控制。这一结果可以通过在硅衬底上生长的 3C-SiC 初始阶段密切控制实验参数来改善。在Si(100)衬底上形成T形图案，这种结构对于沟道外延是有效的。在这种情况下，我们将这种形状称为垂直沟道外延。外延层生长在T形区域的顶部，而不是从Si衬底中的沟道生长。碳化是T形板上获得光滑外延层的关键。一旦外延层在 T 形区域上很好地延伸，这些层就会与相邻的外延层合并。通过 TEM 检查聚结区域。应详细研究缺陷的消除。