Fabrication of single ferroelectric films on silicon substrates by interface control

通过界面控制在硅衬底上制备单层铁电薄膜

基本信息

批准号：
12650305
负责人：
HORITA Susumu
金额：
$ 2.3万
依托单位：
Japan Advanced Institute of Science and Technology, School of Materials Science
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

B_4Ti_3O_12(BIT) thin films were epitaxially grown on epitaxial Pt and Ir films by reactive sputtering with Ar and 0_2 mixed gas, where the epitaxial Pt and Ir films were deposited on epitaxial (100)YSZ/(100) Si substrate structures by sputtering with Ar gas. The X-ray diffraction patterns showed that the epitaxial BIT films were grown on the (100) Ir and Pt films with in-plane rotation of 45° from cube on cube crystallographic relationship, However, Rutherford backscattering spectroscopy showed that many voids exist in the BIT films and interdiffusion of components among Ir, BIT and YSZ films occurs, This is because the Ir film was oxidized due to diffused O through the Ir film during the BIT film deposition, which induced other reaction among other components, On the other hand, it was found that the BIT film on the Pt film had normal density and no void and that it hardly reacted with other films. We can observe the hysteresis with a small loop from the BIT film on the Pt film, but hardly observe one from the Ir film. Therefore, we can speculate that the inter-reaction or interdiffusion among the films is one possible factor to prevent generation of the ferroelectric property of the BIT film on the Ir film. Also, on the (111) Pt film, it was found that BIT film was not perovslaite phase with ferroelectric property, but is pyrochlore phase. This result suggests us that it is necessary to grow the (100) Pt film on the YSZ film in order to obtain a BIT film with the (001) orientation.

B_4TI_3O_12（位）薄膜是通过用AR和0_2混合气的反应性溅射在外延PT和IR膜上生长的，其中外部pt和IR膜沉积在外皮（100）Ysz/（100）Ysz/（100）Ysz/（100）SI si sistrate substrate结构中，通过溅射AR量。 The X-ray diffraction patterns shown that the epitaxial BIT films were grown on the (100) Ir and Pt films with in-plane rotation of 45° from cube on cube crystallographic relationship, however, Rutherford backscattering spectroscopy showed that many voids exist in the BIT films and interdiffusion of components among Ir, BIT and YSZ films occurs, This is because the Ir film was oxidized due to在位膜沉积过程中，通过IR膜扩散O，另一方面发现PT膜上的位膜具有正常密度，没有空白，并且几乎没有反应与其他膜反应。我们可以在PT膜上的位胶片中观察到磁滞，但几乎看不到IR胶片的磁滞。因此，我们可以推测薄膜之间的反应间或扩散是防止IR膜上BIT膜的铁电特性产生的一个可能因素。同样，在（111）的PT膜上，发现BIT膜不是铁电特性的perovslaite阶段，而是Pyrochlore相。该结果表明我们有必要在YSZ膜上种植（100）PT膜，以便获得（001）方向的位膜。