DEVELOPMENT OF MULTIPLY PHOTO-ASSISTED MOVPE FOR FABRICATION OF SEMICONDUCTOR BLUE LASER DIODES

开发用于制造半导体蓝色激光二极管的多重光辅助MOVPE

基本信息

批准号：
07555411
负责人：
YOSHIKAWA Akihiko
金额：
$ 0.77万
依托单位：
Chiba University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555411/
关键词：
COMPOUND SEMICONDUCTOR II-VI COMPOUNDS ZnSe OPTICAL PROBE MOVPE BLUE LIGHT DEVICES SURFACE PHOTO INTERFRENCE REFLECTANCE DIFFERENCE

项目摘要

A new multiply photo-assisted MOVPE system suitable for both growth and p-type doping of widegap II-VI compound semiconductors has been developed in this work. Two laser beams, i.e., Ar-ion laser and He-Ne laser, were used as light sources for photo-assistance and optical probing, respectively. Further, in some cases, an Ar ion laser beam was splitted into two beams and they are used for both photo-assistance and optical probing. As for the in-situ optical probing method, so-called RD (reflectance difference) and SPI (surface photo-interference) methods were adopted. With using this MOVPE system, both epitaxial growth and p-type doping processes in MOVPE of ZnSe layrs on GaAs when using DMZn, DMSe, H_2Se and tBNH_2 were investigated, and following results were obtained.First, it has been found that oscillations with monolayr periodicity in both RD and SPI signal traces have been successfully detected for the first time in MOVPE of ZnSe. On the basis of these optical signal traces observed during growth, the surface-structure during growth was found to be greatly dependent on the used source materials and photoirradiation. Further it was found that (1) when using H_2Se as the Se-source, tBNH_2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface, while (2) they can be adsorbed on both surfaces when using DMSe as the Se-source.On the basis of these results, both selective nitrogen-doping on "Zn-terminated" surface in ALE growth mode and photo-assisted doping of nitrogen in conventional photo-assisted MOVPE mode were investigated ; it has been found that the ZnSe layrs can be effectively doped with nitrogen in both cases, though thermal annealing is still effective to improve both electrical and optical properties of the epitaxial layrs.

这项工作开发了一种新型多重光辅助 MOVPE 系统，适用于宽禁带 II-VI 化合物半导体的生长和 p 型掺杂。两种激光束，即氩离子激光和氦氖激光，分别用作光辅助和光学探测的光源。此外，在某些情况下，Ar离子激光束被分成两束，它们用于光辅助和光学探测。至于原位光学探测方法，采用了所谓的RD（反射差）和SPI（表面光干涉）方法。利用该MOVPE系统，研究了使用DMZn、DMSe、H_2Se和tBNH_2时GaAs上ZnSe层MOVPE的外延生长和p型掺杂过程，得到了以下结果。首次在 ZnSe 的 MOVPE 中成功检测到 RD 和 SPI 信号迹线的周期性。根据在生长过程中观察到的这些光学信号轨迹，发现生长过程中的表面结构很大程度上取决于所使用的源材料和光照射。进一步发现（1）当使用H_2Se作为Se源时，tBNH_2分子选择性地吸附在“Zn封端”表面而不是“Se封端”表面上，而（2）它们可以吸附在“Zn封端”表面上。当使用 DMSe 作为 Se 源时，两个表面。基于这些结果，在 ALE 生长模式中对“Zn 端接”表面进行选择性氮掺杂，以及在传统光辅助生长模式中进行光辅助氮掺杂。 MOVPE模式进行了研究；已经发现，在这两种情况下，ZnSe层都可以有效地掺杂氮，尽管热退火仍然可以有效地改善外延层的电学和光学性质。