Research on II-VI Compounds Semiconductor Lasers

II-VI族化合物半导体激光器的研究

基本信息

批准号：
04452178
负责人：
KISHINO Katsumi
金额：
$ 3.39万
依托单位：
Sophia University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452178/
关键词：
II-VI Compound Semi-conductor Lasers ZnSe ZnCdSe Radical Beam Source Blue Emission Lasers MgZnSSe Multi-Quantum-Barriers Threshold Current Density MgZnSSe系ガスソースMBE CdZnSe 硫化水素 ZnSepn接合

项目摘要

(1)ZnCdSSe system II-VI compounds were grown by gas-source molecular beam epitaxy (GSMBE) using H_2Se and H_2S gases and the growth condition for growing high quality ZnSe with low deep level emission was obtained. It was craligied that ZnSSe could be grown for the H_2S flow rate correponding to S compositional ratio in solid, thus indicating larger sticking coefficient of S compared with that people believed. (2)The doping control for n, p type ZnSe was obtained up to 2x10^<19>cm^<-3> and around 10^<17>cm^<-3>, respectively. (3)Green emission of ZnCdSe/ZnSSe light emitting diodes was obtained the pulse current operation at 77K and 300K.(4)the obvious degradation of electric and optical characteristics for p and n type ZnSe did not be observed through thermal annealing below 400Cﾟ. And by it, the light output of ZnCdSe/ZnSe LED's was improved as a factor of 3 to 4. (5)Threshold current densities of ZnCdSe/ZnSSe and ZnCdSe/MgZnSSe strain quantum well lasers were theorretically analyzed clarifying the structural design principle for green and blue emission regions. (6)The band discontinuity between MgZnSSe and ZnSe was experimentally estimated, getting DELTAEc-0.65DELTAEg. Using it, the effect ofMgZnSSe/ZnSe multi-quantum-barriers(MQBs)were theoretically estimated showing the hetero-barrier enhancement of 120meV.(7)ZnCdSe/ZnSe multi-quantum-well lasers were fabricated by molecular beam epitaxy, operating at 482nm in wavelength with 420A/cm^2, and with a good agreement with theory. The etchant suitable for etching ZnSe was found. (8)ZnSe/ZnSSe short-period superlattices were investigated having lattice matching condition with GaAs. By use of that, MgZnSSe system semiconductor laser structures were fabricated without growth interruption. (9)These researches were already announced through oral presentations, preparing for submitting three papers to technical journals.

(1)利用H_2Se和H_2S气体,采用气源分子束外延(GSMBE)法生长ZnCdSSe系II-VI族化合物,获得了生长低深能级发射的高质量ZnSe的生长条件。 (2) 掺杂控制分别获得了高达2×10^19cm^-3>和10^17cm^-3>左右的n、p型ZnSe。 (3)获得了ZnCdSe/ZnSSe发光二极管的绿光发射。在77K和300K下进行脉冲电流操作。(4)通过下面的热退火，没有观察到p型和n型ZnSe的电学和光学特性的明显退化400Cﾟ，ZnCdSe/ZnSe LED 的光输出提高了 3 至 4 倍。 (5)对 ZnCdSe/ZnSSe 和 ZnCdSe/MgZnSSe 应变量子阱激光器的阈值电流密度进行了理论分析，阐明了结构设计。 (6)MgZnSSe之间的能带不连续性实验估计了ZnSe，得到了DELTAEc-0.65DELTAEg，利用它，理论上估计了MgZnSSe/ZnSe多量子势垒(MQBs)的效果，显示出120meV的异质势垒增强。(7)ZnCdSe/ZnSe多量子势垒。井激光器是通过分子束外延制造的，工作波长为 482nm (8)研究了与GaAs具有晶格匹配条件的ZnSe/ZnSSe短周期超晶格刻蚀剂，与理论吻合良好。 (9)这些研究成果已经通过口头报告公布，正在准备向技术期刊提交三篇论文。