Research on II-VI Compounds Semiconductor Lasers

II-VI族化合物半导体激光器的研究

基本信息

批准号：
04452178
负责人：
KISHINO Katsumi
金额：
$ 3.39万
依托单位：
Sophia University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452178/
关键词：
II-VI Compound Semi-conductor Lasers ZnSe ZnCdSe Radical Beam Source Blue Emission Lasers MgZnSSe Multi-Quantum-Barriers Threshold Current Density MgZnSSe系ガスソースMBE CdZnSe 硫化水素 ZnSepn接合

项目摘要

(1)ZnCdSSe system II-VI compounds were grown by gas-source molecular beam epitaxy (GSMBE) using H_2Se and H_2S gases and the growth condition for growing high quality ZnSe with low deep level emission was obtained. It was craligied that ZnSSe could be grown for the H_2S flow rate correponding to S compositional ratio in solid, thus indicating larger sticking coefficient of S compared with that people believed. (2)The doping control for n, p type ZnSe was obtained up to 2x10^<19>cm^<-3> and around 10^<17>cm^<-3>, respectively. (3)Green emission of ZnCdSe/ZnSSe light emitting diodes was obtained the pulse current operation at 77K and 300K.(4)the obvious degradation of electric and optical characteristics for p and n type ZnSe did not be observed through thermal annealing below 400Cﾟ. And by it, the light output of ZnCdSe/ZnSe LED's was improved as a factor of 3 to 4. (5)Threshold current densities of ZnCdSe/ZnSSe and ZnCdSe/MgZnSSe strain quantum well lasers were theorretically analyzed clarifying the structural design principle for green and blue emission regions. (6)The band discontinuity between MgZnSSe and ZnSe was experimentally estimated, getting DELTAEc-0.65DELTAEg. Using it, the effect ofMgZnSSe/ZnSe multi-quantum-barriers(MQBs)were theoretically estimated showing the hetero-barrier enhancement of 120meV.(7)ZnCdSe/ZnSe multi-quantum-well lasers were fabricated by molecular beam epitaxy, operating at 482nm in wavelength with 420A/cm^2, and with a good agreement with theory. The etchant suitable for etching ZnSe was found. (8)ZnSe/ZnSSe short-period superlattices were investigated having lattice matching condition with GaAs. By use of that, MgZnSSe system semiconductor laser structures were fabricated without growth interruption. (9)These researches were already announced through oral presentations, preparing for submitting three papers to technical journals.

（1）ZnCDSSE系统II-VI化合物是通过使用H_2SE和H_2S气体的气源分子束外延（GSMBE）生长的，并获得了具有低水平发射的高质量ZNSE的生长条件。人们认为，可以为固体中的H_2S流速与S组成比种植ZnSSE，从而表明与人们相比，S的粘附系数较大。（2）分别获得N，P类ZnSe的掺杂控制，分别为2x10^<19> cm^<-3>和大约10^<17> cm^<-3>。（3）ZnCDSE/ZnSSE发光发光二极管的绿色发射在77K和300K处获得脉冲电流的运行。（4）未通过在400c以下的400c pertherealeareareareReal下进行热退火来观察到P和N型ZnSE的电和光学特性的明显降解。通过它，Zncdse/Znse LED的光输出被改进为3至4的因子。（5）Zncdse/Znsse和ZnCDSE/MGZNSSE量子量子量子激光器的阈值电流密度是对绿色和蓝色发射区域的结构设计的阐明。（6）实验估计了MGZNSSE和ZNSE之间的频带不连续性，获得了Deltaec-0.65deltaeg。从理论上估计了MGZNSSE/ZNSE多量子驱动器（MQB）的效果，显示了120mev的杂型栏增强。（7）Zncdse/Znce/Znse Multi-Quantum-Well激光器通过分子束上的良好型，在482nm in 482nm in wavel-evellents中良好的一致性，以良好的形式与420 nm cy n/cm Inture grogins foreginal and cy n a vevellement。发现适合蚀刻ZnSe的蚀刻。（8）研究了Znse/ZnSSE短期超晶格，具有与GAAS的晶格匹配条件。通过使用，MGZNSSE系统半导体激光结构是制造而没有生长中断的。（9）这些研究已经通过口头演讲宣布，准备向技术期刊提交三篇论文。