"Interface Controlled Heteroepitaxy of Ionic Crystals and Covalent Crystals Using Ionicity Control Layr"

“使用离子度控制层的离子晶体和共价晶体的界面控制异质外延”

• 批准号: 05650025
• 负责人: TSUTSUI Kazuo
• 金额: $ 1.41万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650025/
• 关键词: ionicity; heteroepitaxy; interface control; CaF_2; ZnSe; GaAs; フッ化物; GaAs; 分子線エピタキシ-; II-VI族化合物; IV-V族化合物; SrF_2; ヘテロ界面; 半導体; エピタキシャル成長

Interface control of heteroepitaxy of very different materials was investigated from the viewpoints of ionicity of the composed materials and a concept of "ionicity control layr" in which large difference of the ionicity was accommodated by inserting a material having intermediated ionicity was proposed. In experiments in this project, GaAs/CaF_2 interface was employed and ZnSe was examined as the ionicity control layr.The epitaxial temperature for SrF_2 film grown on ZnSe (100) was evaluated as 250ﾟC using MBE method. Many previous report concerning heteroepitaxy of fluorides on various semiconductor substrates were ordered in ionicity of substrate materials, including the result of this experiment. It was found that epitaxial temperature was decreased as difference of ionicity between epilayr and substrate became small.Growth condition of a few nm ZnSe layr on CaF_2 (111) surface was optimized using RHEED and AFM.Based on these observation, GaAs layr was grown on the ZnSe layr, and the relation between crystallinity of the overgrown GaAs layr and the growth condition of the underlying ZnSe layr was observed. As a result, FWHM of X-ray rocking curve from the GaAs layr was reduced to about 50% compared with direct growth of GaAs on CaF_2 surface, when 1-5nm thick ZnSe was deposited on CaF_2 surface at 200ﾟC and was post annealed at 300ﾟC prior to the GaAs growth. AFM observation for initial stage of ZnSe growth on CaF_2 surface and GaAs growth on the ZnSe layr revealed that nucleation density of GaAs was increased on ZnSe surface compared with CaF_2 surface. It was speculated that this high density nucleation was contribute to the improvement of crystallinity of GaAs layr.

从组成材料的离子性的角度研究了非常不同的材料的异质外延的界面控制，并在实验中提出了“离子性控制层”的概念，其中通过插入具有中间离子性的材料来调节离子性的大差异。本项目采用GaAs/CaF_2界面，并考察ZnSe作为离子性控制层。在ZnSe上生长SrF_2薄膜的外延温度(100)使用MBE方法评估了许多关于氟化物在各种半导体衬底上异质外延的报道都是按照衬底材料的离子性排序的，包括本实验的结果发现，外延温度随着外延层之间离子性的差异而降低。利用RHEED和AFM对CaF_2(111)表面几纳米ZnSe层的生长条件进行了优化。基于这些观察， GaAs层生长在ZnSe层上，并且观察过度生长的GaAs层的结晶度和下面的ZnSe层的生长条件之间的关系。结果，来自GaAs层的X射线摇摆曲线的FWHM降低到大约。 200℃下在CaF_2表面沉积1-5nm厚的ZnSe并进行后处理，与在CaF_2表面直接生长GaAs相比，提高了50%在GaAs生长之前在300℃下退火，对CaF_2表面上的ZnSe生长的初始阶段和ZnSe层上的GaAs生长进行观察发现，与CaF_2表面相比，GaAs的成核密度有所增加。高密度成核有助于提高GaAs层的结晶度。

项目成果

モハンマッド・ムスタファ・サリナント,筒井一生: "ZnSe(100)上へのSrF_2エピタキシャル成長" 第41回応用物理学関係連合講演会予稿集. (発表予定). (1994)

Mohammad Mustafa Salinant、Issei Tsutsui：“ZnSe(100) 上的 SrF_2 外延生长”第 41 届应用物理联席会议论文集（待提交）（1994 年）。

モハンマッド・ムスタファ・サリナント,筒井一生: "CaF_2(111)表面上へのZnSe薄膜のMBE成長" 第25回応用物理学会学術講演会予稿集. 1. 280-280 (1995)

Mohammad Mustafa Salinant、Issei Tsutsui：“CaF_2(111) 表面上 ZnSe 薄膜的 MBE 生长”日本应用物理学会第 25 届年会论文集 1. 280-280 (1995)。

モハンマッド・ムスタファ・サリナント,筒井 一生: "ZnSe(100)上へのSrF_2エピタキシャル成長" 第41回応用物理学関係連合講演会予稿集. 1. 305-305 (1994)

Mohammad Mustafa Salinant、Issei Tsutsui：“ZnSe(100) 上的 SrF_2 外延生长”第 41 届应用物理学联席会议论文集 1. 305-305 (1994)。

モハンマッド・ムスタファ・サリナント,山口洋二,筒井一生: "GaAs/CaF_2界面へのZnSeバッファ層の導入効果" 第44回応用物理学会関係連合講演会予稿集. 294-294 (1997)

Mohammad Mustafa Salinant、Yoji Yamaguchi、Issei Tsutsui：“将 ZnSe 缓冲层引入 GaAs/CaF_2 界面的效果”第 44 届日本应用物理学会会议记录 294-294 (1997)。

Mohammad Mustafa Sarinanto, Yoji Yamaguchi and Kazuo Tsutsui: ""ZnSe ionicity control layr inserted in GaAs/CaF_2 (111) interface"" Surface Sciences. (to be published in Applied). (1997)

Mohammad Mustafa Sarinanto、Yoji Yamaguchi 和 Kazuo Tsutsui：““插入 GaAs/CaF_2 (111) 界面中的 ZnSe 离子控制层””表面科学。