Physical Properties control of II-VI Compound Semiconductors for Blue Light-Emitting-Devices

用于蓝色发光器件的II-VI族化合物半导体的物理性能控制

• 批准号: 61550222
• 负责人: YOSHIKAWA Akihiko
• 金额: $ 1.34万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550222/
• 关键词: MOCVD; Blue Light-Emitting-Devices; p-type ZnSe; Lithium-doped Znse; Low-Resistivity ZnS; Aluminium-doped ZnS; Chlorine-doped ZnS; ホトルミネッセンス; 化合物半導体; II-VI族化合物; 【II】-【VI】族化合物; セレン化亜鉛; 有機金属化学気相成長法

Of the II-VI compounds, ZnSe and ZnS have the greatest potential for use in blue light-emitting-diodes. For device applications, it is important to control both conductive type and resistivity of these materials. We have investigated growth of acceptor doped ZnSe and donor doped ZnS films by Metalorganic Chemical Vapor Deposition (MOCVD), and obtained several important results as follows;1. Acceptor doping to ZnSe: We have examined the growth of p-type ZnSe films by using nitrogen (N) and lithium (Li) as acceptor impurtites. First, growth of N-doped ZnSe films by using NH_3 as a dopant has been carried out.It has been shown that the njtrogen atoms act as shallow acceptors in ZnSe through low-temperature photoluminescence measurements, byt some deep centers related to the nitrogen impurity are also introduced into highly N-doped films. In case of the growth of Li-doped ZnSe, cyclopentadienly Li was used as a dopant. Up until now, it has been said that Li is an amphoteric impurity in ZnSe. However, it was found that the lithium atoms incorporated into the ZnSe films act as shallow acceptors through the photoluminescence properties. Furthermore, it was also found that the intensities from deep centers related to Zn-vacancy are remarkably reduced in Li-doped ZnSe.2. Donor doping to ZnS: Growth and properties of donor doped ZnS films by MOCVD have been investigated. Trimethylaluminum and HCl were used as donor dopant sources. Both Al- and Cl- doped ZnS films with resistivity as low as about 1 .cm can be grown. Furthermore, an excitonic emission related to a shallow donor level and emission from self-activated centers are dominant peaks in the low-temperature photoluminescence spectrum.

在II-VI化合物中，ZnSe和ZnS具有最大的使用蓝光发射二极管的潜力。对于设备应用，控制这些材料的导电类型和电阻率很重要。我们已经研究了通过金属有机化学蒸气沉积（MOCVD）的受体掺杂ZnSe和供体掺杂的ZnS膜的生长，并获得了几个重要结果，如下所示； 1。 ZNSE的受体兴奋剂：我们已使用氮（N）和锂（Li）作为受体杂质研究了P型ZnSe膜的生长。首先，通过使用NH_3作为掺杂剂的N掺杂ZNSE膜的生长。已显示NJTrogen原子通过低温光致发光测量值在ZnSe中充当浅的受体，而不是与氮不相关的一些深中心也被引入高度N掺杂的电影中。如果li掺杂的ZnSe生长，则使用环牙胶作为掺杂剂。到目前为止，有人说李是Znse的一种两性杂质。然而，发现将锂原子掺入ZNSE膜中是通过光致发光特性作为浅的受体。此外，还发现，与Zn-Vacancy相关的深中心的强度大大降低了li掺杂的ZnSe.2。对ZnS的供体掺杂：已研究了MOCVD掺杂ZnS胶片的生长和特性。三甲基铝和HCl用作供体掺杂源。具有低至1.cm的电阻率的Al和cl胶质膜都可以种植。此外，与浅层供体水平和自动激活中心发射有关的激发发射是低温光致发光光谱中的主要峰。

项目成果

Akihiko Yoshikawa: Journal of Crystal Growth. 86. 279-284 (1988)

吉川明彦：晶体生长杂志。

Shigeki Yamaga: "Growth of Polycrystalline CdS Films by Low-Pressure Metalorganic Chemical Vapor Deposition" Japanese Journal of Applied Physics. 26. 1002-1007 (1987)

Shigeki Yamaga：“通过低压金属有机化学气相沉积生长多晶 CdS 薄膜”，日本应用物理学杂志。

吉川明彦: 材料科学. 22. 268-274 (1986)

吉川明彦：材料科学。22. 268-274 (1986)

武藤伸一郎: 電子通信学会デバイス研究会 技術報告. ED86-98. 41-46 (1986)

Shinichiro Muto：IEICE 设备研究小组技术报告。 ED86-98 (1986)。

Akihiko Yoshikawa: "The Dependence on GrowthTemperature of Photoluminescence Properties of Nitrogen-Doped ZnSe Grown by MOCVD" Journal of Crystal Growth. 86. 279-284 (1988)

Akihiko Yoshikawa：“MOCVD 生长的氮掺杂 ZnSe 的光致发光特性对生长温度的依赖性”晶体生长杂志。