Study in Metal-Gas-Semiconductor Field-Effect Transistor with High Radiation Hardness

高抗辐射金属气体半导体场效应晶体管的研究

• 批准号: 17560309
• 负责人: SUNAMI Hideo
• 金额: $ 2.24万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560309/
• 关键词: field-effect transistor; insulated gate; gas insulation; radiation hardness; high breakdown voltage; silicon nitride; 熱リン酸

This study is to aim at realization of metal-gas-semiconductorfield-effect transistor (MGSFET) with radiation hardness by replacing gate insulator oxide by gas. Additional effects of high breakdown voltage of the gate and device reliability can be expected. High voltage insulation with, for example, SF_6 gas has long been applied to power transformer, however, the application to field-effect transistor in not yet disclosed in integrated circuit field.In 2005, an insulator material to be removed and its etching solution were chosen to realize the device structure. A set of Si_3N_4 and hot-phosphoric acid was proven to be inadequate because that the hot-phosphoric acid adversely etched silicon substrate surface. Thus, a set of SiO_2 and buffered HF solution was chosen.In 2006, utilizing the developed techniques, an MGSFET with N_2 gas gate insulation was successfully obtained resulting in normal FET operation. This may be the world-first success for gas-insulated FET. After forced gate breakdown of MOS and MGS transistors, the gate leakage current becomes bigger for the MOS, otherwise, much smaller for the MGS. This implies MGS has a potential of radiation-hardness characteristics against cosmic-ray radiation and hot-carrier effect. and

这项研究旨在通过通过气体替换栅极绝缘氧化物，以实现具有辐射硬度的金属气体 - 体积磁效应晶体管（MGSFET）。可以预期高击球电压和设备可靠性的其他效果。高压绝缘层，例如，SF_6气体长期以来已应用于电源变压器，但是，在尚未在集成电路场中尚未公开的现场效应晶体管的应用。在2005年，选择要去除的绝缘材料，并选择其蚀刻溶液以实现设备结构。事实证明，一组SI_3N_4和热磷酸是不足的，因为热磷酸不利地蚀刻了硅底物表面。因此，选择了一组SIO_2和缓冲HF溶液。在2006年，利用开发的技术，成功获得了具有N_2气门绝缘的MGSFET，从而导致正常的FET操作。这可能是世界上燃气隔离的FET的第一个成功。在MOS和MGS晶体管的强迫闸门崩溃后，门泄漏电流变大，MOS较大，否则MG较小。这意味着MGS具有针对宇宙射线辐射和热载体效应的辐射硬度特征的潜力。和

项目成果

Subthreshold-Characteristics Control of Narrow- channel SOI nMOS transistor Utilized Additional Side Gate Electrodes

利用附加侧栅电极的窄沟道 SOI nMOS 晶体管的亚阈值特性控制

• 发表时间: 2007
• 期刊: Jpn. J. Appl. Phys. 46(in press)
• 作者: K.Okuyama;K.Yoshikawa;H.Sunami
• 通讯作者: H.Sunami

Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation

砷等离子体掺杂在三维MOS晶体管中的应用及掺杂分布评价

• 发表时间: 2005
• 期刊: Jpn.J.Appl.Phys. 43
• 作者: K.Kobayashi;T.Eto;K.Okuyama;K.Shibahara;H.Sunami
• 通讯作者: H.Sunami

High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors

三维金属氧化物半导体晶体管的高深宽比结构形成技术

• 发表时间: 2006
• 期刊: Microelectronic Engineering 83
• 作者: H.Sunami;S.Matsumura;K.Yoshikawa;K.Okuyama
• 通讯作者: K.Okuyama

電界効果トランジスタ

场效应晶体管

• 发表时间: 2008

VSLI工学:製造プロセス編

VSLI 工程：制造工艺版

• 发表时间: 2006
• 作者: H.Tsuchiya;K.Fujii;T.Mori;T.Miyoshi;Y.Takakuwa et al.;角南英夫
• 通讯作者: 角南英夫