Study on Silicon Optical Modulator on Insulator

绝缘体上硅光调制器的研究

• 批准号: 14350189
• 负责人: SUNAMI Hideo
• 金额: $ 9.28万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350189/
• 关键词: Optical modulator; SOI; Comb-shaped transistor; Free carrier; Infrared light absorption; Optical waveguide; 透明電極; 赤外吸収; 自由電子赤外光吸収

This research is aiming to realize a silicon optical modulator based on free-carrier absorption. One of the most important key factors to realize the modulator is how much free carriers can be provided for interaction between carriers and infrared light. Thus, comb-shaped MOS transistors were developed and evaluated.In a first trial, the optical modulation for a silicon optical modulator on SOI (silicon-on-insulator) of 1 μm in height and 1 mm in length could not be observed because that incident infrared light (wavelength, λ=1.55μm) slipped out into silicon substrate and heavily-doped polysilicon gate absorbed the light. However, multi-channel MOS transistors were successfully developed and academically proposed.The second trial planning to solve the above issues has not brought about a successful modulation. The main cause is that the strength of noise light running through silicon substrate is more than 1000 times greater than that of signal light coming through inside silicon waveguide causing fatally bad signal-to-noise ratio.Analyzing the experimental, it is estimated that the noise light has to be reduced to great extent. Thus, a device structure with infrared light absorption region in silicon substrate has been proposed. A trench in the substrate filled with carbon black has reduced the noise light efficiently. Another trial to realize the silicon optical modulator with improved structure has been carried out to date.

这项研究的目的是实现基于自由载体滥用的硅光学调节器。实现调制器的最重要的关键因素之一是可以为载体和红外光线之间的相互作用提供多少免费载体。 That, comb-shaped MOS transistors were developed and evaluated.In a first trial, the optical modulation for a silicon optical modulator on SOI (silicon-on-insulator) of 1 μm in height and 1 mm in length could not be observed Because that incident infected light (wavelength, λ=1.55μm) slide out into silicon substrate and heavily-doped polysilicon gate absorbed the light.但是，多通道MOS晶体管成功地开发并准确地提出了。解决上述问题的第二次审判计划并未带来成功的调制。主要原因是，通过硅底物延伸的噪声光的强度比通过硅波导内部传递的信号灯大于1000倍以上，从而导致致命的信号噪声比率。已经提出了一种具有红外光吸收区域的装置结构。装满碳黑色的基材中的沟渠有效地降低了噪声光。迄今为止，已经进行了另一项意识到具有改进结构的硅光学调制器的试验。

项目成果

A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation

一种高深宽比杂质强化氧化束沟道MOS晶体管硅栅形成技术

• 发表时间: 2004
• 期刊: Jpn.J.Appl.Phys. Vol.43
• 作者: A.Katakami;K.Kobayashi;H.Sunami
• 通讯作者: H.Sunami

A Three-Dimensional MOS Transistor Formation Technique with Crystallographic Orientation-Dependent TMAH Etchant

采用依赖于晶体取向的 TMAH 蚀刻剂的三维 MOS 晶体管形成技术

• 发表时间: 2004
• 期刊: SENSORS and ACTUATORS A : PHYSICAL A111
• 作者: H.Sunami;T.Furukawa;T.Masuda
• 通讯作者: T.Masuda

An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure

集成 SOI 结构中 1.55 μm 红外光传播的实验分析

• 发表时间: 2004
• 期刊: Extended Abstracts of International Symp.on Solid State Devices and Materials No.P7-1
• 作者: M.Kawai

VLSI工学 : 製造プロセス編

VLSI 工程：制造工艺版

• 发表时间: 2006
• 作者: 角南英夫

T Furukawa: "A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications"Jpn.J.Appl.Phys.. 42. 2067-2072 (2003)

T Furukawa：“针对区域意识应用的具有垂直形成通道的波纹通道晶体管 (CCT) 的建议”Jpn.J.Appl.Phys.. 42. 2067-2072 (2003)