Fundamental Study on Silicon Optical Switch for Total-Silicon Opto-Electric Integrated Circuits

全硅光电集成电路硅光开关基础研究

基本信息

批准号：
12650346
负责人：
SUNAMI Hideo
金额：
$ 2.3万
依托单位：
HIROSHIMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

The purpose of this study is an implementation of optical switch based on infra-red light absorption with free carriers in silicon. This is not ever proposed and a very challenging target. Since one of key issues to realize that is how large amount of free carriers is generated, a comb-shaped MOS transistor is fabricated. Due to reasons described below, the first trial failed however, a new comb-shaped MOS transistor is realized and future targets can be fixed based on analyses on optical wave guide structure.<Reasons of failure of first trial>1. Incident parallel infra-red light of 10 μm in diameter does not stay within a beam of 1 μm in height and 1 mm in length but disperse into silicon substrate.2. Polysilicon with 10^<21>/cm^3 impurity, filled into comb gaps, strongly absorbs incident infrared light.<Realization of comb-shaped transistor>1. A comb-shaped transistor of 2 μm in effective channel length with 1-μm high and 50-nm wide beams is successfully obtained.2. A comb-shaped transistor having 31 beams realizes 5-times greater drivability compared to that of planar transistor.<Further investigations>1. Incident infra-red light should be locked up inside silicon beam having higher refractive index using SOI substrate.2. ITO gate should be utilized. However, since the less conductivity of the ITO gives less absorption, it is estimated that the gate conductivity should be optimized.3. Since it is analyzed that high reflective metal films like aluminum can be suitable, aluminum-gate MOS transistors will be implemented as well as the ITO transistors.4. Based on the experimental and the analyses described above, it is still planned to realize an optical silicon switch MOS transistor.

这项研究的目的是基于硅的自由载体基于基于红外光滥用的光学开关的实现。这是从未提出的，也是一个非常挑战的目标。由于要意识到的关键问题之一是产生了大量的自由载体，因此制造了梳状的MOS晶体管。由于下面描述的原因，第一个试验失败了，但是，根据对光波指南结构的分析，可以实现新的梳状MOS晶体管，并可以确定未来的目标。<第一次试验> 1的失败的原因。直径为10μm的空红外光不会保持高度1μm，长度为1 mm，而是分散到硅底物中。2。带有10^<21>/cm^3杂质的多硅烷元素填充成梳间隙，强烈吸收入射红外光。<梳形晶体管的实现> 1。成功获得了1μm高和50 nm宽梁的有效通道长度2μm的梳形晶体管。2。与平面晶体管相比，具有31梁的梳形晶体管实现了5倍的驱动性。<进一步的研究> 1。使用SOI底物2。应该利用ITO门。但是，由于ITO的电导率较小，因此滥用较少，因此估计应优化栅极电导率3。由于可以分析铝（如铝）的高反射金属膜可以是合适的，因此将实施铝制铝制MOS晶体管以及ITO晶体管。4。基于上述实验和分析，仍计划实现光学硅开关MOS晶体管。