"Insulated gate structures on GaN and their interface properties"

“GaN 上的绝缘栅结构及其界面特性”

基本信息

批准号：
11650309
负责人：
HASHIZUME Tamotsu
金额：
$ 1.79万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650309/
关键词：
Gallium Nitride surface control interface control MIS structure surface treatment Fermi level pinning SiN_χ Al_2O_3 フェルミ準位ビンニング窒化シリコン膜 GaN MIS接合自然酸化膜 ECRプラズマ

项目摘要

For the application to high-power/high-frequency electronic devices, we have investigated the formation processes of insulated structures on GaN and their interface properties. The main results obtained are listed below :(1) Chemistry and electronic properties of GaN surfaces after various kinds of surface treatments were characterized by x-ray photoelectron spectroscopy (XPS). Strong upward band bending of 1.4 eV was found at the air-exposed GaN surface. This is due to the high density of surface states. The surface treatment in the NH_40H solution and the ECR-excited N_2 plasma significantly decreased the surface band bending to 0.5 eV, indicating the reduction of the Fermi level pinning.(2) We have successfully fabricated the SiN_χ gate structure on the treated n-GaN surface by the ECR-CVD process. The SiN_χ/n-GaN structure showed the type-I band lineup and a low interface state density distribution in the range of 10^<11> cm^<-2> eV^<-1>. The surface passivation utilizing the ECR-C … More VD SiNx film enhanced the drain saturation current and improved the stability in the GaN/AlGaN heterostructure field effect transistors.(3) Electrical characterization of AlN/GaN interfaces was carried out by the C-V technique in samples grown by metal organic chemical vapor deposition. A low value of interface state density D_<it> of < 1x 10^<11> cm^<-2> eV^<-1> was achieved around the energy position of Ec-0.8eV. This indicates that the AlN/GaN structures have good interface properties with low interface state density, and are very promising for advanced MIS devices.(3) A novel surface passivation process for AIGaN/GaN heterostructures utilizing an ultrathin Al_20_3 layer (〜1 nm) was proposed. The reverse leakage current for the Schottky gate contact on the Al_20_3-passivated heterostructure surface was reduced by three orders of magnitude than that for the conventional Schottky gate structure. C-V results showed good gate controllability of two-dimensional electron gas (2DEG) by the novel gate structure. Less

为了应用于高功率/高频电子设备，我们研究了GAN及其界面特性上绝缘结构的形成过程。所获得的主要结果如下：（1）通过X射线光电子光谱（XPS）表征了各种表面处理后GAN表面的化学和电子特性。在空气暴露的GAN表面发现了强大的向上弯曲1.4 eV。这是由于表面状态的高密度。 NH_40H溶液中的表面处理和ECR激发的N_2等离子体显着降低了表面带弯曲至0.5 eV，表明FERMI水平固定的降低。（2）我们通过ECR-CVD过程成功地在处理后的N-GAN表面上制造了SIN_χ门结构。 SIN_χ/N-GAN结构显示了I型带阵容和低界面状态密度分布在10^<11> cm^<-2> ev^<-1>的范围内。利用ECR-C…更多的VD SINX膜的表面钝化增强了排水饱和电流，并提高了GAN/Algan异质结构现场效应晶体管的稳定性。（3）ALN/GAN接口的电气表征是由C-V技术通过金属有机有机化学化学化学蒸发量替代的样品在样品中进行的。在EC-0.8ev的能量位置上实现了<1x 10^<11> cm^<-2> cm^<-2> cm^<-2> cm^<-2> cm^<-2>的低值d_ <it>。这表明ALN/GAN结构具有良好的界面特性，其界面状态密度较低，并且对高级MIS设备的承诺非常承诺。（3）提出了使用Ultrathin Al_20_3层（〜1 nm）的Aigan/GAN异质结构的新型表面钝化过程。 Al_20_3 papsivivative的异质结构表面上的Schottky Gate接触的反向泄漏电流降低了三个数量级。 C-V结果显示了新的栅极结构对二维电子气体（2DEG）的良好栅极可控性。较少的