A study on low-power, high-density integrated circuits for flexible organic FeRAMs

用于柔性有机FeRAM的低功耗、高密度集成电路的研究

• 批准号: 19206039
• 负责人: ISHIWARA Hiroshi
• 金额: $ 30.28万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19206039/
• 关键词: 電子デバイス; 集積回路; 不揮発性メモリ; 有機強誘電体; 有機半導体; フレキシブルメモリ; 強誘電体ゲートトランジスタ; PVDF/TrFE; ペンタセン; PVDF; TrFE; C_60

In this research, we investigated flexible nonvolatile memories utilizing organic FETs with pentacene as a semiconductor and P(VDF/TrFE) as a gate ferroelectric. In order to realize organic ferroelectric gate FETs, fabrication processes such as contact formation by dry etching and P(VDF/TrFE) thin film formations on the pentacene thin films were examined. By using the optimized process conditions, top-gate type organic FETs with P(VDF/TrFE) gate insulator were successfully fabricated on glass and flexible substrates with ferroelectric memory characteristics.

在这项研究中，我们研究了利用有机FET作为半导体和P（VDF/TRFE）作为栅极铁电离的柔性非易失性记忆。为了实现有机铁电栅极FET，检查了五苯二烯薄膜上的干蚀刻和P（VDF/TRFE）薄膜形成等制造过程。通过使用优化的工艺条件，将具有P（VDF/TRFE）栅极绝缘子的顶门类型有机FET成功地在具有铁电记忆特性的玻璃和柔性底物上制造。

项目成果

Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly (vinyliden fluoride-trifluorethylene) and poly (methylmetacrylate)-blended poly (vinyliden fluoride-trifluoroethylene)

聚偏氟乙烯-三氟乙烯与聚甲基丙烯酸甲酯共​​混聚偏氟乙烯-三氟乙烯金属-铁电-绝缘体-半导体二极管的比较研究

• 发表时间: 2009
• 期刊: Jpn.J.Appl.Phys. 48
• 作者: J-W.Yoon;B-E.Park;H.Ishiwara
• 通讯作者: H.Ishiwara

Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymer films

氪气混合对铁电聚偏二氟乙烯-三氟乙烯共聚物薄膜氧等离子体刻蚀的影响

• 发表时间: 2008
• 期刊: Appl. Phys. Lett. Vol. 93
• 作者: J-W. Yoon;S. Ohmi;B-E. Park;H. Ishiwara
• 通讯作者: H. Ishiwara

Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics

利用电容-电压特性研究并五苯基金属氧化物半导体二极管在空气中的稳定性

• 发表时间: 2009
• 期刊: Jpn.J.Appl.Phys. 48
• 作者: Md.Akhtaruzzaman;S.Ohmi;J.Nishida;Y.Yamashita;H.Ishiwara
• 通讯作者: H.Ishiwara

Excellent Ferroelectricity of Thin Poly (Vinylidene Fluoride-Trifluoroethylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes

聚偏二氟乙烯-三氟乙烯共聚物薄膜具有优异的铁电性以及电容器和二极管的低电压运行

• 发表时间: 2007
• 期刊: IEEE Trans. on Untrsonics, Ferroelectrics, and Frequency Control 154
• 作者: S. Fujisaki;Y. Fujisaki;H. Ishiwara
• 通讯作者: H. Ishiwara

Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinyliden fluoride-trifluoro-ethylene) copolymer films

氪气混合对铁电聚偏氟乙烯-三氟乙烯共聚物薄膜氧等离子体刻蚀的影响

• 发表时间: 2008
• 期刊: Appl.Phys.Lett. 93
• 作者: J-W.Yoon;S.Ohmi;B-E.Park;H.Ishiwara
• 通讯作者: H.Ishiwara