STUDY ON THERMALLY STABLE HETEROJUNCTION OHMIC CONTACTS TO GaAs

GaAs热稳定异质结欧姆接触研究

• 批准号: 63550228
• 负责人: ISHIWARA Hiroshi
• 金额: $ 1.54万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550228/
• 关键词: GaAs; OHMIC CONTACT; HETEROSTRUCTURE; SOLID PHASE EPITAXY; GERMANIUM; SILICON; RAPID THERMAL ANNEALING; オーミックコンタクト; ヘテロ接合; 炭化シリコン; プラズマ化学気相堆積法

In order to obtain thermally stable Ohmic contacts to GaAs, Ge/GaAs and Si/GaAs heterostructure were studied experimentally. Main results obtained are summarized as follows.1) It is possible to obtain Ohmic contacts using vacuum-deposition of Ge or Si films on chemically cleaned GaAs substrates and subsequently by changing them in n-type materials using ion implantation and furnace annealing.2) In case of the Ge/GaAs system, two-step annealing composed of low and high temperature annealings is effective in crystallizing the Ge films in single crystal. On the other hand, Si films on GaAs tend to become polycrystalline even after the same heat treatment.3) Good Ohmic characteristics are more easily obtained in the Si/GaAs structure than the Ge/GaAs structure. This difference is considered due to the different behavior of diffused Si and Ge atoms in GaAs. That is, Si atoms in GaAs act as donors and increase the carrier concentration near the surface, while Ge atoms act as acceptors and decrease it.4) Rapid thermal annealing to the Si/GaAs system is effective to obtain good Ohmic contacts. Particularly, the combination of rapid thermal annealing and implantation of Si ions in the Si/GaAs interface is useful to decrease contact resistance.5) From fabrication of test devices, it has been shown that the Si/GaAs heterostructure is good enough to apply to the actual devices.

为了获得与GAAS的热稳定欧姆接触，通过实验研究了GE/GAAS和Si/GAAS异质结构。所获得的主要结果总结如下。1）可以在化学清洁的GAAS底物上使用真空沉积或Si膜的真空沉积获得欧姆接触，然后通过使用离子植入和熔炉退火在N型材料中更改它们。2）在GE/GAAS系统的情况下，由低温和高温退火组成的两步​​退火可有效地结晶单晶中的GE膜。另一方面，即使在相同的热处理后，GAAS上的Si膜也倾向于成为多晶。3）比GE/GAAS结构更容易在Si/GaAs结构中获得良好的欧姆特性。由于GAAS中扩散的Si和GE原子的行为不同，因此认为这种差异。也就是说，GAAS中的Si原子充当供体并增加表面附近的载体浓度，而GE原子充当受体并减少其。4）对Si/GaAS系统的快速热退火有效地获得良好的欧姆接触。特别是，在SI/GAAS界面中的快速热退火和植入植入的组合对于降低接触电阻很有用。5）5）通过制造测试设备，已经证明SI/GAAS异质结构足以应用于适用于实际设备。

项目成果

T.Asano, T.Fukada, S.Furukawa, and H.Ishiwara: "A new thermostable Ohmic contact to n-GaAs" Extended Abstracts of 19th Conf. on Solid State Devices and Materials, Tokyo, pp.67-70 (1987).

T.Asano、T.Fukada、S.Furukawa 和 H.Ishiwara：“一种新的 n-GaAs 热稳定欧姆接触”第 19 届会议的扩展摘要。

T.Asano,H.Ishiwara,and S.Furukawa: "Heteroepitaxial growth of GaAs films on SaF_2/Si(511) structures prepared with rapid thermal annealing" Japanese Journal of Applied Physics. 28. 1784-1788 (1989)

T.Asano、H.Ishiwara 和 S.Furukawa：“通过快速热退火制备的 SaF_2/Si(511) 结构上 GaAs 薄膜的异质外延生长”《日本应用物理学杂志》。

T.Asano: Proceedings of 2nd International Conference on Amorphous and Crystalline Silicon Carbide. (1989)

T.Asano：第二届非晶和结晶碳化硅国际会议论文集。

T.Fukada, T.Asano, S.Furukawa, and H.Ishiwara: "Formation of Ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films" Jpn. J. Appl. Phys., Vol.26, pp.117-121 (1987).

T.Fukada、T.Asano、S.Furukawa 和 H.Ishiwara：“通过蒸发和离子注入 Ge 薄膜的固相外延形成与 n-GaAs 的欧姆接触”Jpn。

T.Asano, H.Ishiwara, and S.Furukawa: "Heteroepitaxial growth of GaAs films on CaF2/Si(511) structures prepared with rapid thermal annealing" Jpn. J. Appl. Phys., Vol.28, pp.1784-1788 (1989).

T.Asano、H.Ishiwara 和 S.Furukawa：“通过快速热退火制备的 CaF2/Si(511) 结构上 GaAs 薄膜的异质外延生长”Jpn。