Fabrication of Long-Life Laser Diodes in GaAs films on Si formed by annealing under ultrahigh pressure

在超高压退火形成的 Si 上的 GaAs 薄膜中制造长寿命激光二极管

基本信息

批准号：
07555003
负责人：
ISHIWARA Hiroshi
金额：
$ 5.76万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555003/
关键词：
ultrahigh pressure thermal expansion coefficient GaAs-on-Si elastic strain annealing photoluminescence strain-free

项目摘要

In order to fabricate long-life laser diodes, strain-free GaAs films on Si substrates which were formed by annealing under ultrahigh pressure, were first characterized using X-ray diffraction (XRD) analysis and photoluminescence (PL) measurement. In the annealing method under ultrahigh pressure, the difference of the thermal expansion coefficient between a GaAs film and a Si substrate is expected to be compensated by that of the elastic strain generated by hydrostatic pressure.It was found that a strain-free GaAs film was formed on a Si substrate without serious degradation of the optical and crystallographical proterties of the film.It was also found that no additional strain or defects were generated during PL measuremet at 77 K.Next, the strain-free GaAs-on-Si structure was reannealed at atmospheric pressure, and variation of the strain was investigated. It was found in this experiment that the strain in the GaAs film increased rapidly in the first 5 min of reannealing but within 20 to 30 min it reached to a constant value which was determined by the reannealing temperature. Finally, both XRD and PL data were compared and an interesting result on the depth distribution of strain in a GaAs film was derived.Based on the above characterization, the residual strain in light emitting diodes with a (In, Ga)P/GaAs/Si structure was reduced by applying an appropriate pressure to the diodes, and the photo-and electoluminescence measurements were conducted. It was found from XRD analysis that the residual strain in the GaAs film was completely relaxd. PL measurements showed that the strain in the (In, Ga)P film was also relaxd partially. We conclude from these results that the annealing method under ultrahigh pressre is good enough for fabrication of oprical devices in heteroepitaxial structures.

为了制造长寿命激光二极管，首先使用X射线衍射（XRD）分析和光致发光（PL）测量来表征在超高压力下通过退火而形成的Si底物上的无应变GAAS膜。在超高压力下的退火方法中，预期GAAS膜和Si底物之间的热膨胀系数的差异被预期由静水压力产生的弹性应变的差异。它发现，在SI底物上，在没有较大的protical protipers not the Granties the Granties the Graneproption。在77 k.next处的测量值，在大气压下重新核心，并研究了菌株的变化。在该实验中发现，GAAS膜中的应变在重新进行的前5分钟内迅速增加，但在20至30分钟内，它达到了恒定值，该值由Reannealing温度确定。最后，比较了XRD和PL数据，并得出了GAAS膜中应变深度分布的有趣结果。基于上述表征，通过（in，GA）P/GAAS/SI结构在光发射二极管中的残留应变通过对DIODES施加适当的压力来减少（gaa）P/GAAS/SI结构，并进行了照片和电子发光测量。从XRD分析中发现，GAAS膜中的残留应变完全放松。 PL测量结果表明，（in Ga）P膜中的应变也部分放松。从这些结果中，我们得出结论，在超高压力机下的退火方法足以制造杂型结构中的opr骨架。