Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices

选择性区域金属有机气相外延制备光子晶体及其在器件中的应用

基本信息

批准号：
15206030
负责人：
MOTOHISA Junichi
金额：
$ 32.12万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206030/
关键词：
Photonics Crystals MOVPE Growth Selective Area Growth Photonics Crystal Slabs Photoluminescence Light Extraction Efficiency Point Line defect Photonic Bands 線欠陥導波路点欠陥共振器 whispering gallery mode

项目摘要

We have established a method to fabricate two-dimensional crystals (2D-PhCs) and 2D-PhC slabs (2D-PhCs) by utilizing selective area metalorganic vapor phase epitaxial (SA-MOVPE) and investigated their optical properties. By doing SA-MOVPE growth on GaAs (111)B or InP(111)B substrates partially covered with periodic array of hexagonal masks, we have fabricated air-hole array of GaAs- and InP-based semiconductors. If the SA-MOVPE is carried out on sacrificial AIGaAs layer, For GaAs-based 2D-PhCs, we have succeeded in the fabrication of air-bridge-type 2D-PhCs and 2D-PhCs with line-defect and point-defect structures. We also have succeeded in the formation of GaAs/AlGaAs quantum wells with periodic air-holes and confirmed their photoluminescence (PL). InP- based 2D-PhCs with period of 400-500nm were also successfully formed after optimization of growth conditions. Emission from InP/InGaAs quantum well structures embedded in 2D-PhC was also fabricated and their optical properties were inve … More stigated PL, demonstrated that this structure is promising for the application of photonic devices operating in the optical-fiber communication wavelength. In addition, GaAs- and InP- based 2D-PhCs constructed from periodic array of hexagonal pillar arrays were also fabricated by SA-MOVPE on (111)B GaAs and (111)A InP substrates, respectively, where array of circular mask opening are defined. In particular, for GaAs-based pillar-type 2D-PhCs, it was found that the light emission from GaAs/AIGaAs quantum wells formed on the top of the pillars is found to dependent on the pitch of the pillar arrays and is enhanced by factor of 10 as compared to the reference planar structure. This phenomenon is qualitatively understood by the enhancement of light-extraction efficiency originating from the formation of photonic bandstructure by the introduction of the periodic structure on the top of high-index slabs. The optical properties 2D-PhCs and 2D-PhCSs, such as photonic bandstructures, dispersion of line-defect waveguides, transmittance and reflectivity, are also investigated theoretically using finite-difference-time-domain method, plane-wave expansion method, and scattering matrix method to understand the optical properties of 2D-PhCs and 2D-PhCSs, including a proposal of modified effective index method applicable to 2D-PhCs with high index contrasts. Less

我们已经建立了通过使用选择器金属有机蒸气相（SA-MOVPE）来制造二维晶体（2D-PHC）和2D-PHC板（2D-PHC），并通过对其光学特性进行了调查。（111）B或INP（111）基于INP的半导体与周期性空气孔形成了GAAS/ALGAAS量子，并在优化生长条件后确认了REM。在光纤维通信波长中运行的更多stig柱设备。此外，由六边形支柱阵列周期性阵列构建的GAAS和IND 2D的2D-PHC是（111）B GAA和（111）尤其是定义的，对于基于GAA的支柱型2D-PHC，发现GAAS/AIGAAS量子的光发射在支柱顶部。结构。 -Defect波导，透射率和反射率，ARSO使用有限的时间域 - 波扩展方法和散射矩阵方法研究了理论，以了解2D-PHCS和2D-PHCS的光学特性，包括适用于修改的有效索引方法的建议。高指数对比度的2D-PHC。