New Functional Optical Cross Connect using Quantum Dots Structure

使用量子点结构的新功能光交叉连接

基本信息

  • 批准号:
    17360169
  • 负责人:
  • 金额:
    $ 9.92万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2005
  • 资助国家:
    日本
  • 起止时间:
    2005 至 2006
  • 项目状态:
    已结题

项目摘要

In WDM networks, key components are the wavelength multi-/demultiplexers, which combine/separate wavelength channels. Various kind of demultiplexing principles have been proposed and already commercially available, such as arrayed-waveguide gratings (AWG). In the latest paper, we have proposed a novel wavelength demultiplexer using a GaInAs/InP multiple quantum well (MQW) arrayed waveguide in which refractive index varies linearly across the array. The conventional AWGs are designed so that phase differences between adjacent waveguides are obtained by gradually varying waveguide length. In the proposed design, however, phase differences between adjacent waveguides are achieved by varying the waveguide thickness which is the refractive indices of the waveguides. Therefore, it is possible to be realized a straight waveguide type wavelength demultiplexer. Furthermore, the device could be applied to wavelength switching since the refractive indices of the waveguides in the array can be con … More trolled dynamically by QCSE or TO effect. On the other hand, self-assembled semiconductor quantum dots (QDs) grown via the Stranski-Krastanov (S-K) growth mode have attracted much attention for the monolithic integration of QD devices. To realize wide wavelength range QDs in a single integrated optical device, a technique to control self-assembled QDs size in the same plane is important. In this project, we have studied the wavelength switch with refractive index varied arrayed waveguide using quantum dots in the waveguide core. In the wavelength switch using MQW structure, we have successfully demonstrated the wavelength switching in the straight arrayed waveguide with linearly varying refractive index distribution by changing the refractive index using thermo-optic effect. We have obtained the wavelength demultiplexing and its changing of the output ports by refractive index change in the waveguide. In the study of quantum dots, we have obtained the 140 nm wavelength emission range from the self-assembled InAs QDs array waveguides on the InP substrate by employing the selective MOVPE growth using asymmetrical mask and the double-cap procedure of QDs. These results are very effective for the realization of optical cross connects in the optical communication system. Less
在 WDM 网络中,关键组件是波长多路复用器/解复用器,它们组合/分离波长通道,并且已经商业化,例如阵列波导光栅(AWG)。提出了一种使用 GaInAs/InP 多量子阱 (MQW) 阵列波导的新型波长解复用器,其中折射率在阵列上线性变化。相邻波导之间的相位差是通过逐渐改变波导长度来获得的,然而,在所提出的设计中,相邻波导之间的相位差是通过改变波导厚度(即波导的折射率)来实现的。此外,由于阵列中波导的折射率可以通过 QCSE 或 TO 效应动态控制,因此该器件可应用于波长切换。通过 Stranski-Krastanov (S-K) 生长模式生长的自组装半导体量子点 (QD) 引起了人们对 QD 器件单片集成的广泛关注,以在单个集成光学器件中实现宽波长范围 QD,这是一种自控技术。 -在同一平面上组装的量子点尺寸很重要,在这个项目中,我们研究了在波导芯中使用量子点的折射率变化的阵列波导。利用MQW结构,我们通过热光效应改变折射率,成功地演示了具有线性变化折射率分布的直阵列波导中的波长切换,并通过折射率变化获得了波长解复用及其输出端口的变化。在量子点的研究中,我们通过选择性地从InP衬底上自组装的InAs量子点阵列波导获得了140 nm波长的发射范围。使用非对称掩膜和QD双帽过程的MOVPE生长对于光通信系统中光交叉连接的实现非常有效。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Improvements of crosstalk in variable-refractive index waveguide array demultiolexer
可变折射率波导阵列解复用器串扰的改进
Size and Density Control of InAs Quantum Dots by Selective MOVPE Growth Using Narrow Stripe Mask Array
使用窄带掩模阵列选择性 MOVPE 生长控制 InAs 量子点的尺寸和密度
Growth temperature and InAs supply dependences of InAs quantum dots on InP (001) substrate
InP (001) 衬底上 InAs 量子点的生长温度和 InAs 供应依赖性
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    T.Okawa;Y.Yamauchi;J.Yamamoto;J Yoshida;K.Shimomura
  • 通讯作者:
    K.Shimomura
Growth temperature and InAs supply dependences of InAs quantum dots on InP (0 0 1) substrate
InP (0 0 1) 衬底上 InAs 量子点的生长温度和 InAs 供应依赖性
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    T.Okawa;Y.Yamauchi;J.Yamamoto;J.Yoshida;K.Shimomura
  • 通讯作者:
    K.Shimomura
Simple estimation of strain distribution in narrow-stripe waveguide array fabricated by selective MOVPE
选择性 MOVPE 制造的窄带波导阵列应变分布的简单估计
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    T.Yoshioka;Y.Kawakita;A.Kawai;T.Okawa;K.Shimomura
  • 通讯作者:
    K.Shimomura
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在氮掺杂 GaAs(001) 表面上生长的 InAs 量子点的发射波长扩展至 1.5 微米
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