Formation of Photonic Crystals by Selective Area Growth and Their Applications

选择性区域生长光子晶体的形成及其应用

基本信息

批准号：
12450117
负责人：
MOTOHISA Junichi
金额：
$ 7.81万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450117/
关键词：
MOVPE Growth Selective Area Growth Masked Substrate Photonic Crystal Photonic Bandgap 再成長 2次元フォトニック結晶スラブ 3角格子 TM偏光・TE偏光

项目摘要

We have developed a technique to form two-dimensional periodic array of hexagonal pillars and air-hole structures for the application of two-dimensional crystals (2DPCs) by selective area metalorganic vapor phase epitaxial (SA-MOVPE) growth. Firstly, SA-MOVPE of GaAs and AlGaAs was carried out on (111)B GaAs substrates partially covered with SiO_2 masks. Array of circular or hexagonal openings of the mask pattern was arranged to realize triangular lattice with periodicity of about 0.5μm. By optimizing the growth conditions, uniform array of hexagonal pillar structures consisting of vertical {110} facets was successfully grown on the masked substrates, which can be used as 2DPC. Similar array of hexagonal InGaAs pillars was also grown on (111)B InP masked substrates, and was found to exhibit high optical qualify suitable for 2DPCs using InP-based materials. In addition, by growing a masked substrate with hexagonal SiO_2 masks arranged to form triangular lattice, we succeeded in the growth of GaAs 2DPC structures with hexagonal air-hole arrays when the growth conditions were optimized to suppress lateral overgrowth. Furthermore, by growing air-hole type 2DPCs on AlGaAs (111)B surfaces and selective undercut etching of AlGaAs, 2DPC slab was also successfully fabricated. Finally, Photonic bands of 2DPCs consisting of hexagonal air-hole arrays or hexagonal dielectric rods were also calculated by using plane-wave expansion method, and they were compared with those consisting of conventional circular air-holes or circular rods. Although the overall features of the photonic bands quite looked alike, the discrepancy originating from the shape of air-holes and rods were found. Especially in hexagonal air-hole arrays in orthogonal-type triangular lattice, the enhancement of overlap between TM and TE gap demonstrated, which is effective to realize 2D full photonic bandgap.

我们开发了一种通过选择性区域金属有机气相外延（SA-MOVPE）生长形成二维周期性阵列六角柱和气孔结构的技术，用于二维晶体（2DPC）的应用。在部分覆盖有SiO_2掩模的(111)B GaAs衬底上进行了GaAs和AlGaAs的制备，并布置了掩模图案的圆形或六边形开口阵列。通过优化生长条件，在掩模衬底上成功生长了由垂直{110}面组成的均匀六方柱结构阵列，其可用作2DPC的类似六方InGaAs柱阵列。也在 (111)B InP 掩模基板上生长，并且被发现表现出适合使用 InP 基 2DPC 的高光学品质此外，通过生长具有排列成三角形晶格的六边形SiO_2掩模的掩模衬底，当优化生长条件以抑制横向过度生长时，我们成功地生长了具有六边形气孔阵列的GaAs 2DPC结构。 AlGaAs (111)B 表面上的气孔型 2DPC 以及 AlGaAs、2DPC 板的选择性底切蚀刻也成功制造出来。还利用平面波展开法计算了由六边形气孔阵列或六边形介质棒组成的2DPC的能带，并将其与由传统圆形气孔或圆形棒组成的2DPC的光子能带的整体特征进行了比较。看起来很相似，但发现了源自气孔和棒的形状的差异，特别是在正交型三角晶格中的六边形气孔阵列中。证明了TM和TE间隙之间重叠的增强，这对于实现2D全光子带隙是有效的。