Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructures

基于半导体纳米线和纳米结构的光化学分解水新型材料的探索

• 批准号: 24656196
• 负责人: MOTOHISA Junichi
• 金额: $ 2.58万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24656196/
• 关键词: 半導体ナノワイヤ; 多孔質構造; GaN; InGaN; プラズマ支援分子線エピタキシー; 選択成長; 光支援電気化学エッチング; 光電極; プラズマ支援分子線エピタキシー法

To explore novel materials for photochemical water splitting, we attempted the fabrication of GaN-based nanostructuers and their characterization of electrochemical properties. Growth of GaN and InGaN nanostructures were attempted by selective-area growth using RF-plasma-assisted molecular beam epitaxy. Hexagonal pyramidal structures of GaN were successfully fabricated and a use of alternate mask material for selective-area growth was suggested to be important to realized nanowires which is suitable for water splitting. We also investigated the photo-electrochemical properties of GaN by measureing current-voltage characteristics of GaN in electroryte with and without light irradiation. Furthermore, their characteristics was compared with porous structures, which were fabricated by photo-assisted chemial etching and had high-denstiy nanometer-sized pores on the surface, and it was found that porous structures allowed much lager photocurrent as compared to planar structures.

为了探索用于光化学水分裂的新型材料，我们尝试制造基于GAN的纳米结构及其对电化学性能的表征。通过使用RF - 铂辅助分子束外延的选择性区域生长，尝试了GAN和INGAN纳米结构的生长。成功制造了GAN的六边形锥体结构，并建议使用替代面具材料来选择性区域生长，对于适合水分分裂的实现纳米线很重要。我们还通过测量具有和没有光照射的电子中GAN的电流特性来研究GAN的光电化学性能。此外，将它们的特性与多孔结构进行了比较，多孔结构是通过照片辅助化学蚀刻来制造的，并在表面上具有高抑制纳米尺寸的孔，并且发现多孔结构允许与平面结构相比，多孔结构允许大量的啤酒光电流。

项目成果

RF-MBE法によるGaN及びInGaNの成長と評価

RF-MBE 法生长和评估 GaN 和 InGaN

• 发表时间: 2013
• 作者: 山本礼奈;小野寺彩;本久順一
• 通讯作者: 本久順一

RF-MBE法によるGaNの選択成長

RF-MBE 法选择性生长 GaN

• 发表时间: 2012
• 作者: 小野寺彩;山本礼奈;本久順一
• 通讯作者: 本久順一

Selective area growth of GaN by RF-plasma assisted molecular beam epitaxy

射频等离子体辅助分子束外延选择性区域生长 GaN

• 发表时间: 2013
• 作者: A. Onodera;A. Yamamoto;and J. Motohisa
• 通讯作者: and J. Motohisa