Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic Properties

具有受控界面的超小型化合物半导体纳米结构的制造及其电子特性的表征

基本信息

批准号：
06452208
负责人：
MOTOHISA Junichi
金额：
$ 4.54万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

The objective of the present research is to realize semiconductor quantum nanostructures with controlled interfaces by utilizing the self-organized nature of the crystal growth. In particular, various types of quantum nanostructures were fabricated by metal-organic vapor phase epitaxial growth (MOVPE) growth on patterned substrates or on vicinal substrates. The main results are listed below.(1) We studied on a growth process on patterned GaAs (001) substrate during metal-organic vapor phase epitaxy (MOVPE) and a novel approach for the fabrication of AlGaAs/GaAs quantum dot (QD) structures. The patterned substrate have an array of holes on the surface and those holes are partially filled with GaAs by MOVPE growth, followed by GaAs/AlGaAs quantum well structures. Detailed investigation on growth process on such patterned substrates revealed the presence of complicated two-dimensional migration of Ga and Al between different facets. Formation of GaAs dots was directly confirmed by spatially resolved cathodoluminescence measurements.(2) We propose a new, lateral surface superlattice (LSSL) type of electron interference devices, where the period of LSSL is typically 60nm, by utilizing multiatomic steps on a vicinal GaAs (001) surface. Conductivity of the device is theoretically studied by taking the effect of randomness in the LSSL into account. We also investigate its drain and transconductance characteristics experimentally at low temperatures, and found clear oscillations in gm-V_G characteristics, which were ascribed to the electron interference effect.

本研究的目的是通过利用晶体生长的自组织性质来实现具有控制界面的半导体量子纳米结构。特别是，通过在图案化的底物或囊泡底物上的金属有机蒸气相生长（MOVPE）生长来制造各种类型的量子纳米结构。下面列出了主要结果。（1）我们研究了金属有机蒸气相两合一（MOVPE）的图案化GAA（001）底物的生长过程，以及用于制造藻类/GAAS量子点（QD）结构的新方法。图案化的底物在表面上有一系列的孔，这些孔由Movpe生长部分填充GAA，然后是GAAS/Algaas量子井结构。对这种图案底物的生长过程的详细研究表明，不同方面之间存在GA和AL的复杂二维迁移。通过空间分辨的阴极发光测量直接证实了GAAS点的形成。（2）我们提出了一种新的，侧面表面超级晶格（LSSL）类型的电子干扰器件，其中LSSL的周期通常为60nm，通过使用囊式GAAS上的多态步骤，（001）表面。理论上通过考虑LSSL中随机性的效果来研究设备的电导率。我们还在低温下实验研究了其漏极和跨导特性，并发现GM-V_G特征的明显振荡归因于电子干扰效应。