Study on electron-beam-induced excitation on Si surfaces

硅表面电子束诱导激发研究

• 批准号: 04650259
• 负责人: SUDA Yoshiyuki
• 金额: $ 1.28万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04650259/
• 关键词: atomic layr epitaxy; silicon; disilane; laser-induced excitation; electron-beam-induced excitation; digital epitaxy; surface migration; surface excitation reaction; 原子層エピタキシー; ディジタルエピタキシー; 原子層エピキタキシー; 表面励起; 反射型高速電子線回折; ディジタル成長

This research aims at investigating atomic-scale crystal growth techniques for IV group semiconductors which are to be necessary for creating the next-generation semiconductor devices with ultra-fine structures. Final goal of this research is to clear the reaction mechanisms of electron-beam-induced excitation of a Si_2H_6/Si (001) system and apply this electron-beam irradiation method to atomic-scale crystal growth. The head investigator has already indicated the possibility of atomic-scale crystal growth with this system from his early research.In the first stage of this research, the reaction mechanisms of thermal excitation were investigated, which provide fundamental processes necessary for exploring of a new crystal growth technique. As a result, relations between adsorption reaction, pyrolysis reaction of adsorbates, surface migration reaction of adsorbates, and epitaxial growth reaction have been clearly understood in the wide range of growth temperature and Si_2H_6 pressure. T … More hese results should give important and fundamental knowledge to understand the surface reaction mechanisms of IV group semiconductors and to expand crystal growth technologies.On the basis of this research, a sub-monolayr-by-sub-monolayr digital epitaxial growth technique of Si has been proposed, and multilayr Si films have been successfully grown with this technique. This technique is named Sub-Atomic-Layr Epitaxy. The results has been published in international conferences of IUMRS (Tokyo, 1993) and so on.Through the above research, relations between desorption mechanism of hydrogen, surface adatom migration mechanisms, and epitaxial growth mechanisms have been well understood. These mechanisms suggest the direction of coming research on atomic-scale digital epitaxy.In the final stage of this research, electron-induced desorption of hydrogen from Si_2H_6・adsorbed Si surfaces was tried on the basis of the above knowledge. The hydrogen desorption is a key process for atomic-scale digital epitaxy. To accomplish the experiment, a new system has been successfully constructed where both of electron-beam and Si_2H_6 gas are able to be simultaneously introduced on the surface. With this system, the promotion of Si growth and hydrogen desorption by the electron-beam irradiation has been confirmed. This research indicates a clue to apply the surface excitation method by electron-beam irradiation to next epitaxial growth technologies. Less

这项研究的原子级晶体生长技术是必要的森林，该森林具有超细结构的NE XT生成半导体设备。晶体的生长已经表明，该系统的第一站原子级晶体crowth可能是对新晶体生长技术的研究。生长反应在广泛的生长温度和si_2h_6的压力中都了解了。 SI的单层数字增长技术已被纳入该技术。研究，氢，表面迁移迁移迁移迁移生长机制已得到充分了解。上述知识的基础。确认

项目成果

Masahiro Ishida: "Sub-atomic-layer epitaxy of Si" Proceedings of the 45th symposium on semiconductons and Integrated Circuits Technology. 112-117 (1993)

Masahiro Ishida：“Si 的亚原子层外延”第 45 届半导体和集成电路技术研讨会论文集。

Y.Suda, M.Ishida, M.Yamashita, and H.Ikeda: "Sub-atomic-layr epitaxy of Si using Si_2H_6" Appl.Surf.Sci.(in press). (1994)

Y.Suda、M.Ishida、M.Yamashita 和 H.Ikeda：“使用 Si_2H_6 进行 Si 的亚原子层外延”Appl.Surf.Sci.（出版中）。

Yoshiyuki Suda: "Sub-atomic-layer epitaxy of Si using Si_2H_6" Proceedings IUMRS-ICAM-93. (in press). (1994)

Yoshiyuki Suda：“使用 Si_2H_6 进行 Si 的亚原子层外延”论文集 IUMRS-ICAM-93。

Y.Suda,M Shirahama,and M.Ishida: "Sub-atomic-layer epitaxy of Si using Si_2H_6" Proceedings 3rd IUMRS Int.Conf. on Advanced Materials,ed.by S.Somiya,M.Doyama,M.Hasegawa,and S.Yamada (Elsevier,Amsterdam,1994). (in press). (1994)

Y.Suda、M Shirahama 和 M.Ishida：“使用 Si_2H_6 进行 Si 的亚原子层外延”论文集第 3 届 IUMRS Int.Conf。

Y.Suda, M.Shirahama, and M.Ishida: "Sub-atomic-layr epitaxy of Si using Si_2H_6" Proceedings 3rd IUMRS Int.Conf.on Advanced Materials.ed.by S.Somiya, M.Doyama, M.Hasegawa, and S.Yamada (Elsevier, Amsterdam). (in press). (1994)

Y.Suda、M.Shirahama 和 M.Ishida：“使用 Si_2H_6 进行 Si 的亚原子层外延”论文集第三届 IUMRS Int.Conf.on Advanced Materials.ed.by S.Somiya、M.Doyama、M.Hasekawa