Sub-Atomic-Layr Epitaxy of Si/Ge Semiconductors

Si/Ge 半导体的亚原子层外延

• 批准号: 08650369
• 负责人: SUDA Yoshiyuki
• 金额: $ 1.22万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650369/
• 关键词: atomic layr epitaxy; epitaxy; silicon; self-limiting; laser-induced excitation; migration; digital epitaxy; disilane; 表面泳動; 反射型高速電子線回折

Atomic Layr Epitaxy (ALE) is an epitaxial film growth technique with which a film is grown layr-by-layr using an one-monolayr saturation adsorption reaction ; a self -limiting function. Hydride molecules are attractive for their being free of impurity species. However, since their saturation coverages are less than one monolayr, it is generally difficcult to realize ALE using the hydride molecules. In 1993, Suda (head investigator) et al. proposed that a sub-atomic-layr epitaxy (SALE) method with which a film is epitaxially grown submonolayr by submonolayr repeating an exposure of hydride molecules and an adatom migration process induced by surface thermal excitation. The adatom migration process is a key process which has not been focused on for ALE and with it, submonolayr-by submonolayr epitaxy is relized. In this research, the relationship between the SALE prowth conditions and growth characteristics including growth modes, growth rates, and growth morphologies has been obtained us … More ing a Si_<>H_6-on-Si (001) system. On the basis of the results, a SALE growth model has been proposed Through these work, fundamental growth mechanisms and a growth control method for SALE has been obtained. The results suggest that SALE growth with a growth unit of saturation coverage if the saturation coverage of a hydride molecule is in the rangeof 0 to 2 monolayr. In this resesarch, a method for Si/Ge ALE has been also investigated. Through this work, thermally cracking method was first applied and it has been found that thermally cracked Si_<>H_6 species saturate at one monolayr on both Si (001) and Ge (001). In the case of Si ALE on GE (001), Si/Ge interface is abrupt. The results imply that thermally cracked GeH_4 is also promising for Ge ALE.With the SALE and thermal cracking ALE using hydride molecules proposed by the head investigator, atomically controlled epitaxy technologies for IV-group semiconductors are expected to be widely promoted and the methods will give a great contribution to the progress of Si/Ge quantum well devices. Less

原子外延（ALE）是一种带有膜的外延膜生长，使用Ane-Monolayr截面的吸附，但是覆盖范围少于一个单层，它是艰难的一般艰难的。头部研究员）等人表明，通过submonolah，薄膜的下属型（销售）方法是氢化物分子的暴露和adatom迁移。在这项研究中依赖于啤酒的关键过程。 > H_6-ON-SI（001）系统。如果氢化物分子的饱和度覆盖范围在此发病界中，则首先发现了THOD的范围。 001）。 SI/GE量子井设备。

项目成果

Y.Suda: "Migration-Assisted Si Sub-Atomic-Layr Epitaxy from Si_2H_6" J.Vac. Sci. Technol.A15. 2643-2468 (1997)

Y.Suda：“Si_2H_6 的迁移辅助硅亚原子层外延”J.Vac。

Y.Suda, Y.Misato, and D.Shiratori: "Si Atomic-Layr Epitaxy Using Thermally-Cracked Si_2H_6" J.Crystal Growth. (submitted).

Y.Suda、Y.Misato 和 D.Shiratori：“使用热裂化 Si_2H_6 进行硅原子层外延”J.晶体生长。

M.Ishida, M.Yamashita, Y.Nagata, and Y.Suda: "Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy" Jpn.J.Appl.Phys.35. 4011-4015 (1996)

M.Ishida、M.Yamashita、Y.Nagata 和 Y.Suda：“亚原子层外延中的生长温度窗口和自限过程”Jpn.J.Appl.Phys.35。

Y.Suda, M.Ishida, and M.Yamashita: "Ar^+-Laser Assisted Sub-Atomic-Layer Epitxy of Si" J.Crystal Growth. 169. 672-680 (1996)

Y.Suda、M.Ishida 和 M.Yamashita：“Ar^ -激光辅助 Si 的亚原子层外延”J.晶体生长。

Y.Suda: "Mechanisms and growth characteristics of Si sub-atomic-layer epitaxy from Si_2 H_6" Ext.Abs.Int.Conf.Solid State Devices and Materials. 682-684 (1996)

Y.Suda：“Si_2 H_6 硅亚原子层外延的机制和生长特性”Ext.Abs.Int.Conf.Solid State Devices and Materials。