Si/SiGe Multiple-Barrier Resonant Tunneling Diode and Its Integrated Technology

Si/SiGe多势垒谐振隧道二极管及其集成技术

基本信息

批准号：
14350179
负责人：
SUDA Yoshiyuki
金额：
$ 9.22万
依托单位：
National University Corporation Tokyo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350179/
关键词：
SiGe Resonant Tunneling Device RTD High Speed Device Strain Relaxation Quantum Well PVCR Multiple Barrier

项目摘要

The head investigator has succeeded in fabricating a Si/SiGe resonant tunneling diode(RTD) which exhibits a peak-to-valley current ratio of as high as 7.6 in 1998 by applying a combination of electron tunneling and a multiple well structure on the basis of theoretical calculation. Further, we have proposed a thin double-layer strain-relaxed buffer as important technology for the electron-tunneling Si/SiGe RTD fabrication and have obtained a PVCR value of as high as〜180.In this work, in order to realize quantum-effect high-speed Si-system devices, on the basis of these achievements, we aimed at establishing electron-tunneling Si/SiGe RTD device technology and basic technology for the device integration.First, we have cleared the strain-relaxation mechanisms for the thin double-layer strain-relaxed buffer and its fabrication conditions. The 1st buffer layer grows coherently, however, upon 10-nm 2nd buffer layer growth, the 1st layer relaxes and the surface threading dislocation remains l … More ow. Thus, we have cleared that the 2nd buffer layer relaxes the 1st buffer layer and restrains the threading dislocations form propagating to the surface. On the basis of the results, we have further proposed a thin triple-layer buffer with which the positions of the lattice mismatch dislocation can be better controlled. We have cleared the fabrication principle and conditions. With the thin triple-layer buffer, we have a strain-relaxed buffer with high crystallinity and high relaxation rate, and have succeeded in fabricating high performance Si/SiGe RTD, the PVCR of which surpasses III-V RTDs. With these experimental results, we demonstrate that Si/SiGe quantum well tunneling structures are very useful as a practical device. Further, as basic integration technology, we have developed current density control method and device isolation technology.Through these works, we have cleared the Si/SiGe RTD device construction technology and the basic integration technology such as device current control and device isolation technology. In this project, we have achieved the technological fundamentals for Si/SiGe electron-tunneling RTD device technology. Less

首席研究员已经在制造Si/SigE共振隧道二极管（RTD）上，该二极管（RTD）通过在1998年表现出峰值与valley电流比为高7.6，通过应用电子调音和多重井结构的组合在基础上。已经提出了一个薄的双层应变 - 释放缓冲液作为电子调节RTD制造的重要技术，并获得了高达-180的PVCR值。设备，基于设备集成的成就设备技术和基本技术。首先，我们清除了双层应变 - 重用的缓冲液ATS Farication的应变范围机制。 10 nm 2nd缓冲层，第一层放松，表面螺纹位错保持了……因此，我们已经清除了第二个缓冲液放松的第一个缓冲液，并限制了螺纹位错的形式，以传播到结果的表面上，我们有进一步提出了具有正相不匹配的三层缓冲液，可以更好地清除制造原理和条件。通过这些实验结果超过了III-V RTD，我们证明了SI SA的实用设备。 SIGE设备限制技术和基本的集成技术，例如设备隔离技术，我们在SI/SIGE电子设备RTD设备技术中获得了技术的基础